Fundamentals of Silicon Carbide Technology

Fundamentals of Silicon Carbide Technology PDF Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313526
Category : Technology & Engineering
Languages : en
Pages : 565

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Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Fundamentals of Silicon Carbide Technology

Fundamentals of Silicon Carbide Technology PDF Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313526
Category : Technology & Engineering
Languages : en
Pages : 565

Get Book Here

Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Technical Reports Awareness Circular : TRAC.

Technical Reports Awareness Circular : TRAC. PDF Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 564

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Book Description


Energy Research Abstracts

Energy Research Abstracts PDF Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 620

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Book Description


Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 976

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Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Properties of Silicon Carbide

Properties of Silicon Carbide PDF Author: Gary Lynn Harris
Publisher: IET
ISBN: 9780852968703
Category : Science
Languages : en
Pages : 312

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Book Description
This well structured and fully indexed book helps to understand and fully characterize the SiC system.

Silicon Carbide

Silicon Carbide PDF Author: Wolfgang J. Choyke
Publisher: Springer Science & Business Media
ISBN: 3642188702
Category : Technology & Engineering
Languages : en
Pages : 911

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Book Description
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Government Reports Annual Index

Government Reports Annual Index PDF Author:
Publisher:
ISBN:
Category : Research
Languages : en
Pages : 968

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Book Description
Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.

Silicon Carbide and Related Materials

Silicon Carbide and Related Materials PDF Author:
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 768

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Book Description


Silicon Carbide and Related Materials, Proceedings of the Fifth Conference, 1-3 November 1993, Washington DC, USA

Silicon Carbide and Related Materials, Proceedings of the Fifth Conference, 1-3 November 1993, Washington DC, USA PDF Author: Michael G. Spencer
Publisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 768

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Book Description
USA companies working in this area include Westinghouse. This material is being investigated primarily in the USA, Japan and Russia alongside that into wide-gap compounds which feature similar characteristics. Applications include high temperature ultra-violet lasers, photodiodes, photodetectors, blue LEDs, high power microwave applications in radar and transmitter devices Special sale to delegates 200 @ 35 Previous volumes in series published by Springer Leading workers in field include Pavlidis (MIT) and Choyke (Pittsburgh, Dept Phys) Feng author is also presenting paper Research in this area is expanding

Government Reports Announcements & Index

Government Reports Announcements & Index PDF Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1842

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Book Description