Function of Additives in Copper Electrodeposition for Semiconductor Devices Metallization PDF Download
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Author: James David Adolf
Publisher:
ISBN:
Category :
Languages : en
Pages : 77
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Author: James David Adolf
Publisher:
ISBN:
Category :
Languages : en
Pages : 77
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Book Description
Author: James Adolf
Publisher:
ISBN:
Category :
Languages : en
Pages : 363
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Book Description
Metallization of semiconductor interconnects by copper electroplating has been the standard industry practice for over ten years. The technology hinges on a special plating additives mixture, formulated empirically, that enables bottom-up metallization. Further extensions of the technology, to dual damascene features smaller than 22 nm, and at the other extreme, to the more challenging, micron scale, through silicon vias (TSV0́9s), hinge on the ability to quantitatively model and optimize the process. The goal of this work is to provide a straightforward, predictive model that applies to the metallization by plating on all feature scales, which will enable the optimization and extension of the process. A critical analysis of the TSV fill process is carried out, focusing on the challenges and differences in scaling from the dual-damascene nanoscale process. A comprehensive and predictive model for the bottom up plating, taking into account additives and copper transport, time-dependent competitive adsorption of the additives including their effect on the plating process, and the effect of the changing geometry and surface area due to plating, has been developed. Limitations associated with the widely varying scales are critically analyzed and corrections to the model accounting for transport limitations of both additives and copper in the relatively large TSV scale are provided. The utilization of the model to provide optimal additives concentrations for bottom-up fill of dual damascene scale features is demonstrated. Further, a model for the critical influence of a special class of nitrogen-based additives (the so-called 0́levelers0́9) on TSV0́9s fill is provided. Analytical treatment of migration effects due to the electrical field on ionic transport in stagnant media for general electrochemical systems is provided. Application of this analysis to the bottom-up fill process indicates that the copper transport limitations and depletion are far more significant than the ohmic effects, and hence, particularly in larger features such as those encountered in TSV0́9s, the use of supporting electrolyte should be minimized. A method is developed to experimentally determine the multiple, coupled additive parameters required for the application of the model, and a systematic approach for the screening of additives expected to provide superior fill is provided. A millifluidics experimental systems was developed that automates this analysis and provides superior experimental data. Commonly used additives (Polyethylene glycol (PEG), a plating suppressor, and bis-(3-sulfopropyl) disulfide (SPS), a plating accelerator) were analyzed and their adsorption and transport parameters determined. Throughout the thesis, a complete fill model is developed as well as the necessary tools to characterize and screen additives in order to achieve void free bottom-up fill in TSVs.
Author: Rohan Akolkar
Publisher:
ISBN:
Category :
Languages : en
Pages : 249
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Author: Kazuo Kondo
Publisher: Springer Science & Business Media
ISBN: 1461491762
Category : Science
Languages : en
Pages : 280
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Book Description
This book discusses the scientific mechanism of copper electrodeposition and it's wide range of applications. The book will cover everything from the basic fundamentals to practical applications. In addition, the book will also cover important topics such as: • ULSI wiring material based upon copper nanowiring • Printed circuit boards • Stacked semiconductors • Through Silicon Via • Smooth copper foil for Lithium-Ion battery electrodes. This book is ideal for nanotechnologists, industry professionals, and practitioners.
Author: Panayotis C. Andricacos
Publisher: The Electrochemical Society
ISBN: 9781566772310
Category : Science
Languages : en
Pages : 418
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Author: G. S. Mathad
Publisher: The Electrochemical Society
ISBN: 9781566772549
Category : Science
Languages : en
Pages : 358
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Author: G. Oskam
Publisher: The Electrochemical Society
ISBN: 156677800X
Category : Science
Languages : en
Pages : 234
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Book Description
This symposium provided a forum for current work on the electrodeposition and characterization of functional coatings and nanostructures. Central issues include the control of size and architecture and the ample choices and demands of substrate and deposited materials. The focus materials of this symposium were semiconductors, oxides and composites with e.g. ceramic nanoparticles or nanotubes.
Author: Erik Gretler Lindberg
Publisher:
ISBN:
Category : Chemical engineering
Languages : en
Pages : 169
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Book Description
Commercial plating systems typically utilize an electrolyte containing the plated ion in combination with additive mixtures consisting of multiple organic surface active species. These additives adsorb on the plated electrode, modifying the deposit properties, texture, and distribution. While some of the mechanistic details of the additives adsorption and interactions have been characterized, the effects of convective flow and particularly of complex current waveforms remain uncharted. A specific motivation for the research reported herein, is the preferential fill, by electroplated copper, of blind and open vias in printed circuit boards that is achieved utilizing special additives in combination with the application of periodic reverse current waveform in the presence of ferric ions and complex flow. The process, which is widely utilized, has been developed empirically. Its optimization requires understanding the effects of each process parameter, its quantification, and the development of a comprehensive quantitative model. The additives utilized in this study are polyethylene glycol (PEG) which is a copper deposition inhibitor, and bis-sodiumsulfopropyl-disulfide (SPS), which is a weak accelerator. Those very same additives enable the bottom-up metallization of semiconductor interconnects; however, due to the much larger metallized features (hundreds of microns vs. few nanometers) and much longer deposition time (order of hour instead of a few seconds), the challenges facing the plating process herein, are different and, in many cases, more complex. A quantitative model describing competitive adsorption of additives and polarization effects was developed to address deficiencies in current theories. This model, invoking heterogeneous adsorption energy sites, accounts for the steady-state additives (SPS and polyethylene glycol, `PEG') coverages, subject to competitive adsorption, as a function of additives concentration in solution, and accurately predicts polarization as a function of time. An extension of this model has been applied to periodic reverse plating, explaining and quantitatively modeling the preservation of increased polarization associated with pulsing as compared to DC. This maintained polarization, which is generated by the periodic reverse current, is the key to enabling the continued bottom-up plating over time periods exceeding a few minutes. The model qualitatively explains the polarization dependence on the magnitude of the anodic pulse potential or current, and lack of dependence on the anodic pulse length. Another effect of the periodic reverse pulsed current is in enhancing the deposit thickness uniformity. This is achieved due to the preferential dissolution at the short high current anodic pulses, of any deposit asperities produced during the regular longer term deposition at the lower cathodic current densities of the pulse waveform. This effect has been quantified and modeled. The significance of the addition of ferrous/ferric ions to the process has been analyzed. The ferrous ions depolarize the dimensionally stable anodes, preventing the rapid oxidation of the sulfur-containing additive bis-sodiumsulfopropyl-disulfide (SPS). Perhaps more importantly, the ferric ions etch the plated copper through a transport limited reaction. Determining quantitatively the transport dependence of this reaction, and applying this to analyze current efficiency data obtained in a commercial plating machine which incorporates complex flow, it was possible to determine quantitatively the average transport rates prevailing in the industrial scale machine. This determination allows the use of lab-scale rotating disk electrodes (RDE) to simulate industrially relevant plating conditions. Furthermore, this transport information enabled the detailed simulation of the flow and transport rates in and around the plated vias, an essential component for quantitative modeling of the process. A computer implemented model has been used to simulate feature fill incorporating the effects of periodic pulse reverse plating, the additives induced polarization effects, and the transport dependent etching of the plated copper. The simulation results agree well with via fill plating experiments conducted in the lab, using a PCB coupon mounted on a RDE.
Author: Julie Marie Mendez
Publisher:
ISBN:
Category :
Languages : en
Pages : 140
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Author: Electrochemical Society. Dielectric Science and Technology Division
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 290
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Book Description
