Author: Mohammad Faizi Othman
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Author: Ashok Srivastava
Publisher: CRC Press
ISBN: 9814613118
Category : Science
Languages : en
Pages : 153

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Book Description
Discovery of one-dimensional material carbon nanotubes in 1991 by the Japanese physicist Dr. Sumio Iijima has resulted in voluminous research in the field of carbon nanotubes for numerous applications, including possible replacement of silicon used in the fabrication of CMOS chips. One interesting feature of carbon nanotubes is that these can be me

Author: Desmond Chang Yih Chek
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 211

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Author: K. Sridharan
Publisher: Springer Nature
ISBN: 3030506991
Category : Technology & Engineering
Languages : en
Pages : 122

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This book introduces readers to the emerging carbon nanotube field-effect transistor (CNTFET) technology, and examines the problem of designing efficient arithmetic circuits in CNTFET technology. Observing that CNTFETs make it possible to achieve two distinct threshold voltages merely by altering the diameter of the carbon nanotube used, the book begins by discussing the design of basic ternary logic elements. It then examines efficient CNTFET-based design of single and multiple ternary digit adders by judicious choice of unary operators in ternary logic, as well as the design of a ternary multiplier in CNTFET technology, and presents detailed simulation results in HSPICE. Lastly, the book outlines a procedure for automating the synthesis process and provides sample code in Python.

Author: Afreen Khursheed
Publisher: CRC Press
ISBN: 1000504298
Category : Technology & Engineering
Languages : en
Pages : 239

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Book Description
This textbook comprehensively covers on-chip interconnect dimension and application of carbon nanomaterials for modeling VLSI interconnect and buffer circuits. It provides analysis of ultra-low power high speed nano-interconnects based on different facets such as material modeling, circuit modeling and the adoption of repeater insertion strategies and measurement techniques. It covers important topics including on-chip interconnects, interconnect modeling, electrical impedance modeling of on-chip interconnects, modeling of repeater buffer and variability analysis. Pedagogical features including solved problems and unsolved exercises are interspersed throughout the text for better understanding. Aimed at senior undergraduate and graduate students in the field of electrical engineering, electronics and communications engineering for courses on Advanced VLSI Interconnects/Advanced VLSI Design/VLSI Interconnects/VLSI Design Automation and Techniques, this book: Provides comprehensive coverage of fundamental concepts related to nanotube transistors and interconnects. Discusses properties and performance of practical nanotube devices and related applications. Covers physical and electrical phenomena of carbon nanotubes, as well as applications enabled by this nanotechnology. Discusses the structure, properties, and characteristics of graphene-based on-chip interconnect. Examines interconnect power and interconnect delay issues arising due to downscaling of device size.

Author: Carmen García Almudéver
Publisher:
ISBN:
Category :
Languages : en
Pages : 139

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Book Description
In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years later, Kahng and Atalla invented the MOSFET. Since that time, it has become the most widely used type of transistor in Integrated Circuits (ICs) and then the most important device in the electronics industry. Progress in the field for at least the last 40 years has followed an exponential behavior in accordance with Moore¿s Law. That is, in order to achieve higher densities and performance at lower power consumption, MOS devices have been scaled down. But this aggressive scaling down of the physical dimensions of MOSFETs has required the introduction of a wide variety of innovative factors to ensure that they could still be properly manufactured. Transistors have expe- rienced an amazing journey in the last 10 years starting with strained channel CMOS transistors at 90nm, carrying on the introduction of the high-k/metal-gate silicon CMOS transistors at 45nm until the use of the multiple-gate transistor architectures at 22nm and at recently achieved 14nm technology node. But, what technology will be able to produce sub-10nm transistors? Different novel materials and devices are being investigated. As an extension and enhancement to current MOSFETs some promising devices are n-type III-V and p-type Germanium FETs, Nanowire and Tunnel FETs, Graphene FETs and Carbon Nanotube FETs. Also, non-conventional FETs and other charge-based information carrier devices and alternative information processing devices are being studied. This thesis is focused on carbon nanotube technology as a possible option for sub-10nm transistors. In recent years, carbon nanotubes (CNTs) have been attracting considerable attention in the field of nanotechnology. They are considered to be a promising substitute for silicon channel because of their small size, unusual geometry (1D structure), and extraordinary electronic properties, including excellent carrier mobility and quasi-ballistic transport. In the same way, carbon nanotube field-effect transistors (CNFETs) could be potential substitutes for MOSFETs. Ideal CNFETs (meaning all CNTs in the transistor behave as semiconductors, have the same diameter and doping level, and are aligned and well-positioned) are predicted to be 5x faster than silicon CMOS, while consuming the same power. However, nowadays CNFETs are also affected by manufacturing variability, and several significant challenges must be overcome before these benefits can be achieved. Certain CNFET manufacturing imperfections, such as CNT diameter and doping variations, mispositioned and misaligned CNTs, high metal-CNT contact resistance, the presence of metallic CNTs (m-CNTs), and CNT density variations, can affect CNFET performance and reliability and must be addressed. The main objective of this thesis is to analyze the impact of the current CNFET manufacturing challenges on multi-channel CNFET performance from the point of view of variability and reliability and at different levels, device and circuit level. Assuming that CNFETs are not ideal or non-homogeneous because of today CNFET manufacturing imperfections, we propose a methodology of analysis that based on a CNFET ideal compact model is able to simulate heterogeneous or non-ideal CNFETs; that is, transistors with different number of tubes that have different diameters, are not uniformly spaced, have different source/drain doping levels, and, most importantly, are made up not only of semiconducting CNTs but also metallic ones. This method will allow us to analyze how CNT-specific variations affect CNFET device characteristics and parameters and CNFET digital circuit performance. Furthermore, we also derive a CNFET failure model and propose an alternative technique based on fault-tolerant architectures to deal with the presence of m-CNTs, one of the main causes of failure in CNFET circuits.

Author: Fouad Sabry
Publisher: One Billion Knowledgeable
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 500

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Book Description
What Is Carbon Nanotube Field Effect Transistor A carbon nanotube field-effect transistor, also known as a CNTFET, is a kind of field-effect transistor that makes use of a single carbon nanotube or an array of carbon nanotubes as the channel material in place of bulk silicon, as is done in the conventional MOSFET construction. Since they were first exhibited in 1998, there have been significant advancements in CNTFET technology. How You Will Benefit (I) Insights, and validations about the following topics: Chapter 1: Carbon nanotube field-effect transistor Chapter 2: Carbon nanotube Chapter 3: JFET Chapter 4: Schottky barrier Chapter 5: Electron mobility Chapter 6: Nanoelectromechanical systems Chapter 7: Threshold voltage Chapter 8: Organic field-effect transistor Chapter 9: Ballistic conduction Chapter 10: Hybrid solar cell Chapter 11: Potential applications of carbon nanotubes Chapter 12: Carbon nanotubes in photovoltaics Chapter 13: Optical properties of carbon nanotubes Chapter 14: Carbon nanotube nanomotor Chapter 15: NanoIntegris Chapter 16: Ballistic conduction in single-walled carbon nanotubes Chapter 17: Tunnel field-effect transistor Chapter 18: Field-effect transistor Chapter 19: Carbon nanotubes in interconnects Chapter 20: Synthesis of carbon nanotubes Chapter 21: Vertically aligned carbon nanotube arrays (II) Answering the public top questions about carbon nanotube field effect transistor. (III) Real world examples for the usage of carbon nanotube field effect transistor in many fields. (IV) 17 appendices to explain, briefly, 266 emerging technologies in each industry to have 360-degree full understanding of carbon nanotube field effect transistor' technologies. Who This Book Is For Professionals, undergraduate and graduate students, enthusiasts, hobbyists, and those who want to go beyond basic knowledge or information for any kind of carbon nanotube field effect transistor.

Author: Adam Glowacz
Publisher: MDPI
ISBN: 3039282948
Category : Technology & Engineering
Languages : en
Pages : 604

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Book Description
This Special Issue with 35 published articles shows the significance of the topic “Signal Processing and Analysis of Electrical Circuit”. This topic has been gaining increasing attention in recent times. The presented articles can be categorized into four different areas: signal processing and analysis methods of electrical circuits; electrical measurement technology; applications of signal processing of electrical equipment; fault diagnosis of electrical circuits. It is a fact that the development of electrical systems, signal processing methods, and circuits has been accelerating. Electronics applications related to electrical circuits and signal processing methods have gained noticeable attention in recent times. The methods of signal processing and electrical circuits are widely used by engineers and scientists all over the world. The constituent papers represent a significant contribution to electronics and present applications that can be used in industry. Further improvements to the presented approaches are required for realizing their full potential.

Author: Zhongfeng Wang
Publisher: BoD – Books on Demand
ISBN: 9533070498
Category : Technology & Engineering
Languages : en
Pages : 467

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Book Description
The process of Integrated Circuits (IC) started its era of VLSI (Very Large Scale Integration) in 1970’s when thousands of transistors were integrated into one single chip. Nowadays we are able to integrate more than a billion transistors on a single chip. However, the term “VLSI” is still being used, though there was some effort to coin a new term ULSI (Ultra-Large Scale Integration) for fine distinctions many years ago. VLSI technology has brought tremendous benefits to our everyday life since its occurrence. VLSI circuits are used everywhere, real applications include microprocessors in a personal computer or workstation, chips in a graphic card, digital camera or camcorder, chips in a cell phone or a portable computing device, and embedded processors in an automobile, et al. VLSI covers many phases of design and fabrication of integrated circuits. For a commercial chip design, it involves system definition, VLSI architecture design and optimization, RTL (register transfer language) coding, (pre- and post-synthesis) simulation and verification, synthesis, place and route, timing analyses and timing closure, and multi-step semiconductor device fabrication including wafer processing, die preparation, IC packaging and testing, et al. As the process technology scales down, hundreds or even thousands of millions of transistors are integrated into one single chip. Hence, more and more complicated systems can be integrated into a single chip, the so-called System-on-chip (SoC), which brings to VLSI engineers ever increasingly challenges to master techniques in various phases of VLSI design. For modern SoC design, practical applications are usually speed hungry. For instance, Ethernet standard has evolved from 10Mbps to 10Gbps. Now the specification for 100Mbps Ethernet is on the way. On the other hand, with the popularity of wireless and portable computing devices, low power consumption has become extremely critical. To meet these contradicting requirements, VLSI designers have to perform optimizations at all levels of design. This book is intended to cover a wide range of VLSI design topics. The book can be roughly partitioned into four parts. Part I is mainly focused on algorithmic level and architectural level VLSI design and optimization for image and video signal processing systems. Part II addresses VLSI design optimizations for cryptography and error correction coding. Part III discusses general SoC design techniques as well as other application-specific VLSI design optimizations. The last part will cover generic nano-scale circuit-level design techniques.

Author: Millie Pant
Publisher: Springer
ISBN: 981100448X
Category : Technology & Engineering
Languages : en
Pages : 1030

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Book Description
The proceedings of SocProS 2015 will serve as an academic bonanza for scientists and researchers working in the field of Soft Computing. This book contains theoretical as well as practical aspects using fuzzy logic, neural networks, evolutionary algorithms, swarm intelligence algorithms, etc., with many applications under the umbrella of ‘Soft Computing’. The book will be beneficial for young as well as experienced researchers dealing across complex and intricate real world problems for which finding a solution by traditional methods is a difficult task. The different application areas covered in the proceedings are: Image Processing, Cryptanalysis, Industrial Optimization, Supply Chain Management, Newly Proposed Nature Inspired Algorithms, Signal Processing, Problems related to Medical and Health Care, Networking Optimization Problems, etc.