Author: Mukesh Gogna
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages :
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Book Description
In this dissertation, the floating gate type quantum dot gate nonvolatile memory device has been investigated. The electrical characterization and simulation of the fabricated quantum dot nonvolatile memory (QD-NVM) devices is presented. The electrical characterization includes program, erase, and read operations and the memory retention and endurance measurements. In addition, QD synthesis and their incorporation as the floating gate (along with material characterization) is presented in fabricated QD-NVM devices. The synthesis of the germanium oxide cladding on the germanium quantum dots is one of the key interests in this research. Owing to the electrical and physical isolation of the quantum dots due to germanium oxide cladding, it provides a larger threshold voltage shift due to tight packing and higher density of quantum dots. GeOx cladding on the QDs enhances the data retention by avoiding the lateral dot-to-dot conduction, thereby reducing charge leakage. A threshold voltage of 1.5 V was observed in the first GeOx-Ge QD-NVM device when pulsed with a 20 Âμs stress pulse. The experimental data indicates that there is about a 0.1 V shift in the threshold voltage of that device over a period of one year. Similarly, 1.6 V of threshold voltage shift was observed in the second device and the retention data indicates negligible shift in the threshold voltage over a period of one year. Similar results were observed in the II-VI based QD-NVM devices.
Author: Mukesh Gogna
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
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Book Description
Author: Supriya Karmakar
Publisher: Springer Science & Business Media
ISBN: 8132216350
Category : Technology & Engineering
Languages : en
Pages : 147
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Book Description
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
Author: Faquir C Jain
Publisher: World Scientific
ISBN: 9813232358
Category : Technology & Engineering
Languages : en
Pages : 206
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Book Description
This book features the selected articles from the 25th annual symposiums Connecticut Microelectronics and Optoelectronics Consortium (CMOC), that focus on micro/nano-electronics and optoelectronics/Nano-photonics, to cover not only the technologies, but also the applications ranging from biosensors/nano-biosystems, to cyber security.Enabling materials research involving growth and characterization of novel devices such as multi-bit nonvolatile random access memory with fast erase, high performance circuits, and their potential applications in developing new high-speed systems. Other articles focus on emerging nanoelectronic devices including topological insulators, spatial wavefunction switching (SWS) FETs as compact high-speed 2-bit SRAM circuits, quantum dot channel (QDC) FETs. Fundamental work on critical layer thickness in ZnSe/GaAs and other material systems impacts electronic and photonic devise integrating mismatched layers are also reported. While another article investigates linearly graded GaAsP-GaAs system with emphasis on strain relaxation. Based on these technologies, area of analyzes multiple junction solar cells using semiconductors with different energy gaps, as a possible application were also featured; Pixel characterization of protein-based retinal implant, as well as a low-power and low-data-rate (100 kbps) fully integrated CMOS impulse radio ultra-wideband (IR-UWB) transmitter were investigated as a potential candidate for biomedical application. While other articles looked at carbon nanofibers/nanotubes for electrochemical sensing. In the area of cyber security, two articles present encrypted electron beam lithography fabricated nanostructures for authentication and nano-signatures for the identification of authentic electronic components.In summary, papers presented in this volume involve various aspects of high performance materials and devices for implementing high-speed electronic systems.
Author: Ravi Shankar R. Velampati
Publisher:
ISBN:
Category :
Languages : en
Pages : 230
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Book Description
Author: Faquir C Jain
Publisher: World Scientific
ISBN: 9811242836
Category : Technology & Engineering
Languages : en
Pages : 210
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Book Description
Published as part of the well-established book series, Selected Topics in Electronics and Systems, this compendium features 18 peer reviewed articles focusing on high-performance materials and emerging devices for implementation in high-speed electronic systems.Wide-ranging topics span from novel materials and devices, biosensors and bio-nano-systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields.Systems for implementing data with security tokens; single chemical sensor for multi-analyte mixture detection; RF energy harvesters; additively manufactured RF devices for 5G, IoT, RFID and smart city applications are also prominently included.Written by eminent researchers, recent developments also highlight equivalent circuits models at room temperature and 4.2 K; quantum dot nonvolatile memories, 3D-confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications.
Author: Jan Amir Khan
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages :
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Book Description
Author: Ameenah Al-Ahmadi
Publisher: BoD – Books on Demand
ISBN: 953510649X
Category : Science
Languages : en
Pages : 186
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Book Description
The book "State-of-the-art of Quantum Dot System Fabrications" contains ten chapters and devotes to some of quantum dot system fabrication methods that considered the dependence of shape, size and composition parameters on growth methods and conditions such as temperature, strain and deposition rates. This is a collaborative book sharing and providing fundamental research such as the one conducted in Physics, Chemistry, Material Science, with a base text that could serve as a reference in research by presenting up-to-date research work on the field of quantum dot systems.
Author: Sabu Thomas
Publisher: Springer Nature
ISBN: 3031547799
Category :
Languages : en
Pages : 483
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Book Description
Author:
Publisher: Academic Press
ISBN: 0080864589
Category : Technology & Engineering
Languages : en
Pages : 385
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Book Description
This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.
