Fabrication and Characterization of ZnO Based Photodetectors and Light-emitting Diodes PDF Download
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Author: Leelaprasanna Mandalapu Jayaramulu
Publisher:
ISBN:
Category : Optoelectronic devices
Languages : en
Pages : 314
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Book Description
Author: Leelaprasanna Mandalapu Jayaramulu
Publisher:
ISBN:
Category : Optoelectronic devices
Languages : en
Pages : 314
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Book Description
Author: Chi-man Luk
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 190
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Book Description
With the optimized growth parameters, n-ZnO:Al/i-ZnO/p-GaN:Mg heterojunction LEDs were fabricated. The electrical characteristics of the diodes were investigated. The ultraviolet (UV) electroluminescence (EL) from the device was detected at room temperature. The emission is attributed to the electron-hole radiative recombination in the ZnO region and is explained in detail by an energy band diagram. ZnO nanostructures are expected to have improved optical and electronic properties because of the quantum confinement effect. Using low-temperature aqueous chemical method, the ZnO nanorods arrays were grown on the buffer layers prepared at various temperatures. The nanorods were grown along [0001] direction. The PL measurement indicated that the emission spectrum covered a UV peak at ~ 380 nm and a broad visible band at ~ 560 nm. The PL spectra of the ZnO nanorods are independent on the growth temperature of the buffer layer. Moreover, the buffer-layer-thickness-dependent structural and optical properties were studied. The as-grown ZnO nanorods were utilized to fabricate hybrid LED with an organic semiconductor, N, N'-diphenyl-N, N'-bis(1-naphthyl)-1, 1'-biphenyl-4, 4'-diamine (?NPD), which is one of the most widely used hole transport and blue-emitting organic semiconductors. Current-voltage characteristics of the devices exhibited nonlinear rectifying behaviour. The EL spectra of the hybrid LEDs reveal a blue and broad yellowish green emission originated from the?NPD layer and the defect levels of the ZnO respectively. The origin of the emission bands from the hybrid structures will be examined.
Author: Nargis Bano
Publisher:
ISBN: 9789173930543
Category :
Languages : en
Pages : 68
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Author: Abdul Samad Syed
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659189814
Category :
Languages : en
Pages : 84
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Book Description
Fabrication of efficient Ultraviolet Light Emitting Diodes (UV LEDs) is a challenging task for the semiconductor industry of the modern times. Finding the suitable semiconducting material is the key in order to make efficient LEDs. This book aims at understanding the use of ZnO in UV LEDs that demands the understanding of its optical properties first. Structural and optical properties of any semiconducting material are strongly correlated. An adequate knowledge and understanding of this relationship is necessary for fabrication of devices with desired optical properties. The aim of this work was to investigate the change in optical properties caused by growth techniques and substrate modification. To study the influence of growth technique on optical properties, ZnO nanostructures were grown using atmospheric pressure metal organic chemical vapor deposition (APMOCVD) and chemical bath deposition (CBD) techniques. Off-cut angle of SiC substrates were modified to observe the change on the optical properties. The results that are obtained demonstrate a significant contribution in the fields of ZnO based nano-optoelectronics and nano-electronics.
Author: Zhe Chuan Feng
Publisher: CRC Press
ISBN: 1439855749
Category : Technology & Engineering
Languages : en
Pages : 565
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Book Description
Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering and materials science, Handbook of Zinc Oxide and Related Materials provides a comprehensive, up-to-date review of various technological aspects of ZnO. Volume Two focuses on devices and nanostructures created from ZnO and similar materials. The book covers various nanostructures, synthesis/creation strategies, device behavior, and state-of-the-art applications in electronics and optoelectronics. It also provides useful information on the device and nanoscale process and examines the fabrication of LEDs, LDs, photodetectors, and nanodevices. Covering key properties and important technologies of ZnO-based devices and nanoengineering, the handbook highlights the potential of this wide gap semiconductor. It also illustrates the remaining challenging issues in nanomaterial preparation and device fabrication for R&D in the twenty-first century.
Author: Zhe Chuan Feng
Publisher: Taylor & Francis
ISBN: 143985582X
Category : Science
Languages : en
Pages : 1008
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Book Description
Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a
Author: M S Ramachandra Rao
Publisher: Springer Science & Business Media
ISBN: 813221160X
Category : Science
Languages : en
Pages : 377
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Book Description
ZnO has been the central theme of research in the past decade due to its various applications in band gap engineering, and textile and biomedical industries. In nanostructured form, it offers ample opportunities to realize tunable optical and optoelectronic properties and it was also termed as a potential material to realize room temperature ferromagnetism. This book presents 17 high-quality contributory chapters on ZnO related systems written by experts in this field. These chapters will help researchers to understand and explore the varied physical properties to envisage device applications of ZnO in thin film, heterostructure and nanostructure forms.
Author: Hatim Alnoor
Publisher: Linköping University Electronic Press
ISBN: 9176854817
Category :
Languages : en
Pages : 96
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Book Description
One-dimensional (1D) nanostructures (NSs) of Zinc Oxide (ZnO) such as nanorods (NRs) have recently attracted considerable research attention due to their potential for the development of optoelectronic devices such as ultraviolet (UV) photodetectors and light-emitting diodes (LEDs). The potential of ZnO NRs in all these applications, however, would require synthesis of high crystal quality ZnO NRs with precise control over the optical and electronic properties. It is known that the optical and electronic properties of ZnO NRs are mostly influenced by the presence of native (intrinsic) and impurities (extrinsic) defects. Therefore, understanding the nature of these intrinsic and extrinsic defects and their spatial distribution is critical for optimizing the optical and electronic properties of ZnO NRs. However, identifying the origin of such defects is a complicated matter, especially for NSs, where the information on anisotropy is usually lost due to the lack of coherent orientation. Thus, the aim of this thesis is towards the optimization of the lowtemperature solution-based synthesis of ZnO NRs for device applications. In this connection, we first started with investigating the effect of the precursor solution stirring durations on the deep level defects concentration and their spatial distribution along the ZnO NRs. Then, by choosing the optimal stirring time, we studied the influence of ZnO seeding layer precursor’s types, and its molar ratios on the density of interface defects. The findings of these investigations were used to demonstrate ZnO NRs-based heterojunction LEDs. The ability to tune the point defects along the NRs enabled us further to incorporate cobalt (Co) ions into the ZnO NRs crystal lattice, where these ions could occupy the vacancies or interstitial defects through substitutional or interstitial doping. Following this, high crystal quality vertically welloriented ZnO NRs have been demonstrated by incorporating a small amount of Co into the ZnO crystal lattice. Finally, the influence of Co ions incorporation on the reduction of core-defects (CDs) in ZnO NRs was systematically examined using electron paramagnetic resonance (EPR).
Author: Jau-Jiun Chen
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
ABSTRACT: ZnO-based materials have great potential for UV light-emitting diodes (LEDs) and transparent electronics because of the high exciton binding energy of ZnO relative to GaN. Fabricating an effective LED from novel materials requires a detailed knowledge of the band offset, etch, and contact behavior of the material. This work determined the valence and conduction band offsets for Zn095Cd0.05O/ZnO (0.17 eV, 0.30 eV) and related materials using x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). These methods were also used to study carrier confinement in two promising passivation materials: MgO/GaN (1.06 eV, 3.30 eV) and Sc2O3/GaN (0.42 eV, 2.14 eV). To form an LED mesa, it is critical to understand the etch rate of ZnO-based materials. In this work, HCl and H3PO4 were used as etchants for ZnCdO/ZnO (~50 nm·1-min−1 HCl/~15 nm·min−1 H3PO4) and ZnMgO/ZnO (300-1100 nm·min−1 HCl/120-300 nm·min−1H3PO4). A high degree of selectivity was sought using these etchants on ZnCdO/ZnO (~50 HCl/~15 H3PO4) and ZnMgO/ZnO (~300-400 HCl/~25 H3PO4). Alloyed Ti/Au and Ti/Al/Pt/Au contacts were deposited on n-type Zn095Cd0.05O, with excellent contact resistivities of and 2.3x10−4 and 1.6x10−4 ohm-cm2, respectively. Alloyed Ti/Au and indium-tin-oxide (ITO)/Ti/Au metallization of n-type Al-doped ZnO was used to create ohmic metal contacts with excellent contact resistivities of 6x10−8 and 4.6x10−6ohm-cm2. Using SiLENSe Software, the optimum active layer thickness was found to be 200 nm.
Author: Magnus Willander
Publisher: CRC Press
ISBN: 9814411345
Category : Science
Languages : en
Pages : 225
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Book Description
Zinc oxide (ZnO) in its nanostructured form is emerging as a promising material with great potential for the development of many smart electronic devices. This book presents up-to-date information about various synthesis methods to obtain device-quality ZnO nanostructures. It describes both high-temperature (over 100 C) and low-temperature (under
