Fabrication and Characterization of Zinc Oxide Light-emitting Diodes, Indium Zinc Oxide Thin-film Transistors, and AlGaN/GaN High Electron Mobility Transistor-based Biosensors PDF Download

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Fabrication and Characterization of Zinc Oxide Light-emitting Diodes, Indium Zinc Oxide Thin-film Transistors, and AlGaN/GaN High Electron Mobility Transistor-based Biosensors

Fabrication and Characterization of Zinc Oxide Light-emitting Diodes, Indium Zinc Oxide Thin-film Transistors, and AlGaN/GaN High Electron Mobility Transistor-based Biosensors PDF Author: Yu-Lin Wang
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ABSTRACT: Hydrogen effects on the electrical and optical properties of p-i-n ZnO light emitting diodes (LEDs) were investigated. There were no diode characteristics or light emission observed from p-i-n ZnO LEDs unless the LEDs were annealed at 350 °C after fabrication. Annealed diodes showed band-edge electroluminescence at 385nm and a broad defect band with a peak at 930nm at room temperature. The effects of hydrogen plasma, moisture, water, and phosphoric acid solution on the annealed diode characteristics were investigated and significant degradation of electrical and optical properties were observed in all cases. The plasma-enhanced chemical vapor-deposited (PECVD) SiO2 and SiN[subscript x] passivation effects on p-i-n ZnO LEDs were also investigated.