Fabrication and Characterization of Lon-sensitive Field-effect Transistors Using Silicon-on-insulator Technology PDF Download
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Author: Kristine Bedner
Publisher:
ISBN:
Category :
Languages : en
Pages : 101
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Book Description
Author: Kristine Bedner
Publisher:
ISBN:
Category :
Languages : en
Pages : 101
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Book Description
Author: David T. Mathis
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 67
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Book Description
Author: Ioannis Kymissis
Publisher: Springer Science & Business Media
ISBN: 0387921346
Category : Technology & Engineering
Languages : en
Pages : 156
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Book Description
Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.
Author: Thomas Philip Allen
Publisher:
ISBN:
Category :
Languages : en
Pages : 80
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Author: Franklin Bradley Sharer
Publisher:
ISBN:
Category :
Languages : en
Pages : 386
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Book Description
ABSTRACT: The growth of consumer electronics over the past few decades has been directly related to the advances in semiconductor technology. Devices have consistently grown smaller, faster, and cheaper at regular intervals leading to revolutionary new products reaching the market place. The basic building block of digital systems, such as the personal computer, is the Field Effect Transistor (FET). This thesis describes some of the silicon fabrication methods that are used to produce the FET and other related devices. The silicon-on-insulator technique that has been used to improve device performance is also discussed and a brief overview of the operation of various forms of the FET follows. An array of FETs was fabricated and tested using the clean room facility at the University of North Carolina at Charlotte and this thesis concludes with a description of the fabrication sequence and the results. The fabrication sequence includes mask design and generation, photolithography, doping, contact formation, and device testing.
Author: Pavan Vidyadhar Muzumdar
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 114
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Author:
Publisher:
ISBN:
Category : DNA.
Languages : en
Pages : 95
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Book Description
This thesis describes the design, fabrication and characterization of ISFET for pH detection, DNA immobilization and hybridization.
Author: Christian Philipp Sandow
Publisher:
ISBN: 9783893366750
Category :
Languages : en
Pages : 112
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Book Description
Author: Sorin Cristoloveanu
Publisher: Springer Science & Business Media
ISBN: 1461522455
Category : Technology & Engineering
Languages : en
Pages : 389
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Book Description
Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Author: Ira Ardoin
Publisher:
ISBN:
Category :
Languages : en
Pages : 118
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Book Description
The fabrication of the 4H-silicon carbide metal semiconductor field effect transistor (MESFET) is occurring in the Microelectronics Engineering Laboratory (MEL). There are various experiments occurring that characterize different aspects of the device, in order to achieve its optimum performance. The silicon dioxide (SiO2) layer achieves widespread use in the microelectronics industry. This may be used for the dielectric field effect in MOS (metal oxide semiconductor) devices, as a field oxide for isolation between source, gate, and drain contacts, or for device isolation on a very crowded integrated circuit (IC). In this project, the SiO2 is used for isolation between source, gate, drain, and devices. It is imperative to minimize the defect density in the SiO2 layer to increase the reliability and performance of these devices. The quality of the SiO2 is thus characterized by the fabrication of SiC MOS capacitors. Thermal oxidation has been utilized in the fabrication of the SiO2 in the 4H-SiC MOS capacitors adopting the nickel-SiO2-4H-SiC (Ni/SiO2/4H-SiC) structure. The SiO2 layers have been grown onto Si-face and C-face 4H-SiC substrates employing the techniques of sputtering and wet thermal oxidation. The recipes for deposition by these techniques are optimized by trial and error method. Atomic force microscopy (AFM) analysis is employed in the investigation of growth effects of SiO2 on the Si- and C-face of these SiC substrates. MOS capacitors are made utilizing sputtering and wet oxidation methods on the Si-face of 4H-SiC wafers, which are studied utilizing C-V (capacitance versus voltage) techniques.
