Fabrication and Characterization of Indium Phosphide (InP) Heterojunction Bipolar Transistors (HBTs)

Fabrication and Characterization of Indium Phosphide (InP) Heterojunction Bipolar Transistors (HBTs) PDF Author: 廖育資
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Fabrication and Characterization of Compositionally-graded Indium Phosphide Based Type-II Double Heterojunction Bipolar Transistors

Fabrication and Characterization of Compositionally-graded Indium Phosphide Based Type-II Double Heterojunction Bipolar Transistors PDF Author: William K. Snodgrass
Publisher:
ISBN:
Category :
Languages : en
Pages : 120

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Fabrication and Characterization of InP/InGaAs Metamorphic Heterojunction Bipolar Transistors (HBTs)

Fabrication and Characterization of InP/InGaAs Metamorphic Heterojunction Bipolar Transistors (HBTs) PDF Author: Hong Yang
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 133

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InP-Based Materials and Devices

InP-Based Materials and Devices PDF Author: Osamu Wada
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 616

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A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.

The Fabrication and Characterization of InP-based Heterojunction Bipolar Transistors

The Fabrication and Characterization of InP-based Heterojunction Bipolar Transistors PDF Author: James C. Vlcek
Publisher:
ISBN:
Category :
Languages : en
Pages : 380

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Fabrication and Characterisation of High-speed Indium Phosphide-based Heterojunction Bipolar Transistors

Fabrication and Characterisation of High-speed Indium Phosphide-based Heterojunction Bipolar Transistors PDF Author: James De Fraine Sexton
Publisher:
ISBN:
Category :
Languages : en
Pages : 249

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Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz

Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz PDF Author: Ksenia Nosaeva
Publisher: Cuvillier Verlag
ISBN: 3736982879
Category : Technology & Engineering
Languages : en
Pages : 154

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This work describes the improvement in thermal management of InP double heterojunction bipolar transistors (DHBTs) fabricated with a transferred-substrate process. The availability of nanocrystalline CVD diamond-on-silicon (Si) handle substrates makes it possible to introduce a 10 µm diamond layer into the InP HBT MMIC stack with BCB-embedded transistors, passive elements and metal interconnects using an adhesive wafer-to-wafer bond process with subsequent removal of the Si host-substrate. Vertical thermal via connections through the diamond and BCB were created by applying inductively coupled plasma etching with oxygen plasma and electroplating. Electrical characterization of transistors after diamond transfer showed no degradation in RF characteristics and an improvement in DC behavior. A reduction in thermal resistance by 74% from 4.2 K/mW to 1.1 K/mW was observed, which to the author’s knowledge is the lowest thermal resistance for 1-finger InP HBTs with 0.8×5 µm2 emitter area. Significant reduction of thermal resistance of multi-finger devices was achieved: from 4.1 K/mW down to 0.7 K/mW for 2-finger HBTs and from 1.53 K/mW down to the recordly small 0.54 K/mW for 3-finger devices. Based on the developed diamond heat spreader technology, the designed medium-power amplifier delivers a maximum output power of 20 dBm representing the improvement of 4 dBm. Moreover, stable operation of a high-power amplifier with maximum output power of 23 dBm was reached.

Design, Fabrication and Characterization of Ultra High Speed InP/GaAsSb/InP Double Heterojunction Bipolar Transistors

Design, Fabrication and Characterization of Ultra High Speed InP/GaAsSb/InP Double Heterojunction Bipolar Transistors PDF Author: Martin W. Dvorak
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 356

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Fabrication and Characterisation of InP/InGaAs Heterojunction Bipolar Transistors

Fabrication and Characterisation of InP/InGaAs Heterojunction Bipolar Transistors PDF Author: Daniel Timothy Pillow
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 65

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Optimization and Characterization of Indium Phosphide Based Heterojunction Bipolar Transistor by Thermal and Device Simulations

Optimization and Characterization of Indium Phosphide Based Heterojunction Bipolar Transistor by Thermal and Device Simulations PDF Author: Igor Lusetsky
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 122

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