Epitaxy and Applications of Si-Based Heterostructures: Volume 533 PDF Download
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Author: Eugene A. Fitzgerald
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 414
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Book Description
The April 13-17, 1998 symposium held in San Francisco offered an intriguing mix of SiGe device and circuit technology, and the latest developments in SiGE materials and SiGeC alloys. The 53 papers pivot around the themes of: technologies and devices; devices, processing, and characterization; photonics and optoelectronics; epitaxy of quantum structures; SiGeC alloys; and epitaxy of SiGe/ related materials. A sample title from each of the six parts includes: carrier transport and velocity overshoot in strained Si on SiGe heterostructures, device and fabrication issues of high-performance Si/SiGe FETS, photonic crystals based on macroporous silicon, stacked layers of self-assembled Ge islands, photoluminescence in strain compensated Si/SiGeC multiple quantum wells, and a novel layer-by-layer heteroepitaxy of germanium on silicon (100) surface. Annotation copyrighted by Book News, Inc., Portland, OR
Author: Eugene A. Fitzgerald
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 414
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Book Description
The April 13-17, 1998 symposium held in San Francisco offered an intriguing mix of SiGe device and circuit technology, and the latest developments in SiGE materials and SiGeC alloys. The 53 papers pivot around the themes of: technologies and devices; devices, processing, and characterization; photonics and optoelectronics; epitaxy of quantum structures; SiGeC alloys; and epitaxy of SiGe/ related materials. A sample title from each of the six parts includes: carrier transport and velocity overshoot in strained Si on SiGe heterostructures, device and fabrication issues of high-performance Si/SiGe FETS, photonic crystals based on macroporous silicon, stacked layers of self-assembled Ge islands, photoluminescence in strain compensated Si/SiGeC multiple quantum wells, and a novel layer-by-layer heteroepitaxy of germanium on silicon (100) surface. Annotation copyrighted by Book News, Inc., Portland, OR
Author: Fred Roozeboom
Publisher: The Electrochemical Society
ISBN: 9781566772327
Category : Technology & Engineering
Languages : en
Pages : 470
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Book Description
Author: M. Willander
Publisher: Elsevier
ISBN: 008054102X
Category : Technology & Engineering
Languages : en
Pages : 325
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Book Description
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers
Author:
Publisher:
ISBN:
Category : Quasicrystals
Languages : en
Pages : 552
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Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 606
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Book Description
Author:
Publisher:
ISBN:
Category : Ions
Languages : en
Pages : 752
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Book Description
Author: Jeff J. Peterson
Publisher:
ISBN:
Category :
Languages : en
Pages : 634
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Book Description
Author: S. J. Pearton
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 1056
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Book Description
This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.
Author: S. A. Ringel
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 338
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Book Description
This book contains the proceedings of two symposia - 'Integration of Dissimilar Materials in Micro- and Optoelectronics' and 'III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications'. The publication stems from the desire to achieve new levels of device functionality and higher levels of performance via integration of devices based on dissimilar semiconductors, where the constraint of lattice-matching on the breadth of attainable devices can be reduced. It covers fundamental topics germane to integration of a wide range of dissimilar materials spanning wide-bandgap III-V nitrides, III-V/Si integration, II-VI and II-VI/III-V compounds, heterovalent structures, oxides, photonic bandgap structures and others. Topics such as compliancy, dislocation control, selective area growth, bonding methodologies, etc. are featured. It also addresses processing issues in the manufacturing of III-V and Si-based heterostructures for commercial products. Here, the success enjoyed by silicon germanium technology is contrasted by the promise of silicon-carbon alloys which have opportunities and challenges for the new generation of process developers.
Author: Leigh T. Canham
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 600
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This volume was first published in 1999.
