Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors PDF Download
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Author: Mengqi Fu
Publisher: Springer
ISBN: 9811334447
Category : Science
Languages : en
Pages : 113
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Book Description
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Author: Mengqi Fu
Publisher: Springer
ISBN: 9811334447
Category : Science
Languages : en
Pages : 113
Get Book Here
Book Description
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Author: Efstathios I. Meletis
Publisher: Trans Tech Publications Ltd
ISBN: 3036414886
Category : Science
Languages : en
Pages : 161
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Book Description
This volume of the "Journal of Nano Research" includes peer-reviewed articles reflecting the practical research results in the synthesis and properties analysis of nanomaterials and nanoparticles for various engineering goals - photocatalytic applications, micro- and optoelectronics, photovoltaic and electrochemical use in solar cells and energy storage devices, for applications in biomedicine, creating protective coatings, etc. The presented articles collection will be helpful to specialists from many branches of engineering whose activity is related to nanomaterials and nanotechnologies.
Author:
Publisher:
ISBN:
Category : Nanoscience
Languages : en
Pages : 816
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Book Description
Author: John Michels (Journalist)
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 920
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Book Description
Author: Simas Rackauskas
Publisher: BoD – Books on Demand
ISBN: 1789859050
Category : Technology & Engineering
Languages : en
Pages : 122
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Book Description
Nanowires are attracting wide scientific interest due to the unique properties associated with their one-dimensional geometry. Developments in the understanding of the fundamental principles of the nanowire growth mechanisms and mastering functionalization provide tools to control crystal structure, morphology, and the interactions at the material interface, and create characteristics that are superior to those of planar geometries. This book provides a comprehensive overview of the most important developments in the field of nanowires, starting from their synthesis, discussing properties, and finalizing with nanowire applications. The book consists of two parts: the first is devoted to the synthesis of nanowires and characterization, and the second investigates the properties of nanowires and their applications in future devices.
Author: J Arbiol
Publisher: Elsevier
ISBN: 1782422633
Category : Technology & Engineering
Languages : en
Pages : 573
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Book Description
Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields
Author: Dae Mann Kim
Publisher: Springer Science & Business Media
ISBN: 1461481244
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Author: Jean-Pierre Colinge
Publisher: Cambridge University Press
ISBN: 1107052408
Category : Science
Languages : en
Pages : 269
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Book Description
A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.
Author: Stephen M. Goodnick
Publisher: Springer
ISBN: 3319918966
Category : Technology & Engineering
Languages : en
Pages : 241
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Book Description
This book presents research dedicated to solving scientific and technological problems in many areas of electronics, photonics and renewable energy. Energy and information are interconnected and are essential elements for the development of human society. Transmission, processing and storage of information requires energy consumption, while the efficient use and access to new energy sources requires new information (ideas and expertise) and the design of novel systems such as photovoltaic devices, fuel cells and batteries. Semiconductor physics creates the knowledge base for the development of information (computers, cell phones, etc.) and energy (photovoltaic) technologies. The exchange of ideas and expertise between these two technologies is critical and expands beyond semiconductors. Continued progress in information and renewable energy technologies requires miniaturization of devices and reduction of costs, energy and material consumption. The latest generation of electronic devices is now approaching nanometer scale dimensions, new materials are being introduced into electronics manufacturing at an unprecedented rate, and alternative technologies to mainstream CMOS are evolving. Nanotechnology is widely accepted as a source of potential solutions in securing future progress for information and energy technologies. Semiconductor Nanotechnology features chapters that cover the following areas: atomic scale materials design, bio- and molecular electronics, high frequency electronics, fabrication of nanodevices, magnetic materials and spintronics, materials and processes for integrated and subwave optoelectronics, nanoCMOS, new materials for FETs and other devices, nanoelectronics system architecture, nano optics and lasers, non-silicon materials and devices, chemical and biosensors, quantum effects in devices, nano science and technology applications in the development of novel solar energy devices, and fuel cells and batteries.
Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
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Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
