Electrical Properties of Grain Boundaries and Dislocations in Crystalline Silicon PDF Download
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Author: Yongkook Park
Publisher:
ISBN:
Category :
Languages : en
Pages : 113
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Book Description
Keywords: electronic structure of silicon grain boundary, retention of impurity at dislocations, hydrogen segregation, thermal dissociation kinetics, impurity gettering, electrical activity of dislocations, hydrogen passivation, carrier recombination activity, multi-crystalline silicon solar cells.
Author: Yongkook Park
Publisher:
ISBN:
Category :
Languages : en
Pages : 113
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Book Description
Keywords: electronic structure of silicon grain boundary, retention of impurity at dislocations, hydrogen segregation, thermal dissociation kinetics, impurity gettering, electrical activity of dislocations, hydrogen passivation, carrier recombination activity, multi-crystalline silicon solar cells.
Author: Phillip Eugene Russell
Publisher: Sagwan Press
ISBN: 9781376964387
Category : History
Languages : en
Pages : 190
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Book Description
This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.
Author: J. R. A. Ayres
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Shubneesh Batra
Publisher:
ISBN:
Category : Grain boundaries
Languages : en
Pages : 212
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Book Description
Author: Phillip Eugene Russell
Publisher: Nabu Press
ISBN: 9781289778880
Category :
Languages : en
Pages : 190
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Book Description
This is a reproduction of a book published before 1923. This book may have occasional imperfections such as missing or blurred pages, poor pictures, errant marks, etc. that were either part of the original artifact, or were introduced by the scanning process. We believe this work is culturally important, and despite the imperfections, have elected to bring it back into print as part of our continuing commitment to the preservation of printed works worldwide. We appreciate your understanding of the imperfections in the preservation process, and hope you enjoy this valuable book.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Research in 1980/81 was carried out in three areas: (i) electron diffraction experiments on diffusion bonded (welded) boundaries; (ii) combined EBIC and high voltage transmission electron microscopy in order to investigate the correlation between structure and electrical properties and (iii) passivation of the electrical activity of crystal defects with hydrogen. The diffraction experiments did not furnish new information on the structure of grain boundaries in silicon, but were valuable as a check on the previous findings. In addition, they offered the possibility to separate double diffraction effects from boundary scattering. The combined EBIC and HVTEM experiments established (for the first time) unambiguously that coherent twin boundaries per se are not electrically active. The localized electrical activity observed in coherent twin boundaries is due to the presence of intrinsic dislocations, which are partial dislocations of the Schottky type. However, not all partial dislocations studied were electrically active, for reasons which are not completely understood. The combined EBIC and HVTEM investigations showed further (again for the first time) that many of the linear boundaries which were previously assumed to be coherent twin boundaries are second order twins, and that these twins are strongly electrically active. In passivation experiments, it is necessary to separate influence of the heat treatment from those of hydrogen. Passivation reduces the activity of some, but not of all defects. Passivation is particularly effective in reducing the electrical activity of deformation induced dislocations, which conceivably have a different core structure from grown-in dislocations.
Author: Hans J. Möller
Publisher: Springer Science & Business Media
ISBN: 3642934137
Category : Technology & Engineering
Languages : en
Pages : 399
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Book Description
This book summarizes the most recent aspects of polycrystalline semiconductors as presented at the conference Polycrystalline Semiconductors - Grain Boundaries and Interfaces. It contains 12 review articles on selected topics written by experts in their fields and 41 complementary contributed papers. The structure, chemistry and physics of grain boundaries and other interfaces are experimentally and theoretically studied. Aspects of the technologically important polycrystalline silicon are discussed in detail. Also covered are other polycrystalline semiconductors, germanium and compound semiconductors, that are currently of interest in fundamental research and in the technology of solar cells and thin film devices. Anyone interested in polycrystalline semiconductors will be able to use this comprehensive collection to advantage. It also suggests directions for new research and development.
Author: Sukumar Basu
Publisher: BoD – Books on Demand
ISBN: 9533075872
Category : Science
Languages : en
Pages : 360
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Book Description
The exciting world of crystalline silicon is the source of the spectacular advancement of discrete electronic devices and solar cells. The exploitation of ever changing properties of crystalline silicon with dimensional transformation may indicate more innovative silicon based technologies in near future. For example, the discovery of nanocrystalline silicon has largely overcome the obstacles of using silicon as optoelectronic material. The further research and development is necessary to find out the treasures hidden within this material. The book presents different forms of silicon material, their preparation and properties. The modern techniques to study the surface and interface defect states, dislocations, and so on, in different crystalline forms have been highlighted in this book. This book presents basic and applied aspects of different crystalline forms of silicon in wide range of information from materials to devices.
Author: Deren Yang
Publisher: Springer
ISBN: 9783662564714
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..
Author: Yutaka Yoshida
Publisher: Springer
ISBN: 4431558004
Category : Technology & Engineering
Languages : en
Pages : 498
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Book Description
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
