Effects of Low Temperature Annealing on the Adhesion of Electroless Plated Copper Thin Films in TiN Deposited Silicon Integrated Circuit Substrates PDF Download
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Author: Adam Timothy Tate
Publisher:
ISBN:
Category :
Languages : en
Pages : 82
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Author: Adam Timothy Tate
Publisher:
ISBN:
Category :
Languages : en
Pages : 82
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Author: P. Joshi
Publisher: The Electrochemical Society
ISBN: 1566777259
Category : Science
Languages : en
Pages : 63
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Book Description
The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Novel Plasma Techniques for Low Temperature Processing of Thin Films for Flexible Electronics¿, held during the 215th meeting of The Electrochemical Society, in San Francisco, California from May 24 to 29, 2009.
Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 1628
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Author: D. M. Mattox
Publisher:
ISBN:
Category : Adhesion
Languages : en
Pages : 24
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A discussion is given of the types of interfacial regions which may be formed between a film and a substrate. Various deposition techniques are compared as to their ability to form the various types of interfacial regions. The mechanism of failure of the bond between film and substrate is discussed in terms of the type and structure of the interfacial region. The reasons for poor adhesion are discussed and approaches for overcoming adhesion problems are presented. The deposition process of "ion plating" is presented as one technique for overcoming many adhesion problems.
Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 1622
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Author: Milan Paunovic
Publisher: The Electrochemical Society
ISBN: 9781566771696
Category : Technology & Engineering
Languages : en
Pages : 328
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Author: Vibhor Vinodkumar Jain
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Copper has become the metal of choice for metallization, owing to its high electrical and thermal conductivity, relatively higher melting temperature and correspondingly lower rate of diffusivity. Most of the current studies can get high strength copper thin films but on an expense of conductivity. This study proposes a technique to deposit high strength and high conductivity copper thin films on different silicon substrates at room temperature. Single crystal Cu (100) and Cu (111) have been grown on Si (100) and Si (110) substrates, respectively. Single crystal Cu (111) films have a high density of growth twins, oriented parallel to the substrate surface due to low twin boundary energy and a high deposition rate. The yield strengths of these twinned Cu films are much higher than that of bulk copper, with an electrical resistivity value close to that of bulk copper. X-ray diffraction, transmission electron microscopy and nanoindentation techniques were used to show that high density twins are sole reason for the increase in hardness of these thin films. The formation of growth twins and their roles in enhancing the mechanical strength of Cu films while maintaining low resistivity are discussed.
Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 572
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Author: Bethany J. Walles
Publisher:
ISBN:
Category : Nickel-titanium alloys
Languages : en
Pages : 160
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Author: Harzara S. Rathore
Publisher: The Electrochemical Society
ISBN: 9781566771849
Category : Computers
Languages : en
Pages : 292
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