Double-doped Double-strained Modulation Doped Field Effect Transistor 3D-SMODFET PDF Download
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Author: Glenn Harvey Martin
Publisher:
ISBN:
Category :
Languages : en
Pages : 302
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Author: Glenn Harvey Martin
Publisher:
ISBN:
Category :
Languages : en
Pages : 302
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Author: Matthew Lee Seaford
Publisher:
ISBN:
Category :
Languages : en
Pages : 164
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Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 816
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Author: Heinrich Daembkes
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 544
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Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 424
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Author: IEEE Electron Devices Society
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 178
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Book Description
This text presents advances in the frontiers of electronic device and circuit research and development. It also discusses low-paper digital electronics, microwave power circuits and optoelectronics.
Author: Eric John Mozdy
Publisher:
ISBN:
Category :
Languages : en
Pages : 466
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Author: Norman C. Tien
Publisher:
ISBN:
Category :
Languages : en
Pages : 282
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Author: Ronald Waldo Grundbacher
Publisher:
ISBN:
Category :
Languages : en
Pages : 256
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Book Description
The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2002
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