Author: Yoshihiro Ishibashi
Publisher: CRC Press
ISBN: 9782881243936
Category : Science
Languages : en
Pages : 342

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Author: Alexander Tagantsev
Publisher: Springer Science & Business Media
ISBN: 1441914226
Category : Science
Languages : en
Pages : 828

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Book Description
At present, the marketplace for professionals, researchers, and graduate students in solid-state physics and materials science lacks a book that presents a comprehensive discussion of ferroelectrics and related materials in a form that is suitable for experimentalists and engineers. This book proposes to present a wide coverage of domain-related issues concerning these materials. This coverage includes selected theoretical topics (which are covered in the existing literature) in addition to a plethora of experimental data which occupies over half of the book. The book presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observations of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. "Domains in Ferroic Crystals and Thin Films" covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In other textbooks on solid state physics, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In contrast, "Domains in Ferroic Crystals and Thin Films" concentrates on domain-related phenomena in nonmagnetic ferroics. These materials are still inadequately represented in solid state physics textbooks and monographs.

Author: Dennis Meier
Publisher: Oxford University Press
ISBN: 0192607413
Category : Science
Languages : en
Pages : 366

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Book Description
Technological evolution and revolution are both driven by the discovery of new functionalities, new materials and the design of yet smaller, faster, and more energy-efficient components. Progress is being made at a breathtaking pace, stimulated by the rapidly growing demand for more powerful and readily available information technology. High-speed internet and data-streaming, home automation, tablets and smartphones are now "necessities" for our everyday lives. Consumer expectations for progressively more data storage and exchange appear to be insatiable. Oxide electronics is a promising and relatively new field that has the potential to trigger major advances in information technology. Oxide interfaces are particularly intriguing. Here, low local symmetry combined with an increased susceptibility to external fields leads to unusual physical properties distinct from those of the homogeneous bulk. In this context, ferroic domain walls have attracted recent attention as a completely new type of oxide interface. In addition to their functional properties, such walls are spatially mobile and can be created, moved, and erased on demand. This unique degree of flexibility enables domain walls to take an active role in future devices and hold a great potential as multifunctional 2D systems for nanoelectronics. With domain walls as reconfigurable electronic 2D components, a new generation of adaptive nano-technology and flexible circuitry becomes possible, that can be altered and upgraded throughout the lifetime of the device. Thus, what started out as fundamental research, at the limit of accessibility, is finally maturing into a promising concept for next-generation technology.

Author: Jan Seidel
Publisher: Springer
ISBN: 3319253018
Category : Science
Languages : en
Pages : 249

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Book Description
This book provides a state-of-the art overview of a highly interesting emerging research field in solid state physics/nanomaterials science, topological structures in ferroic materials. Topological structures in ferroic materials have received strongly increasing attention in the last few years. Such structures include domain walls, skyrmions and vortices, which can form in ferroelectric, magnetic, ferroelastic or multiferroic materials. These topological structures can have completely different properties from the bulk material they form in. They also can be controlled by external fields (electrical, magnetic, strain) or currents, which makes them interesting from a fundamental research point of view as well as for potential novel nanomaterials applications. To provide a comprehensive overview, international leading researches in these fields contributed review-like chapters about their own work and the work of other researchers to provide a current view of this highly interesting topic.

Author: Jill Guyonnet
Publisher: Springer Science & Business Media
ISBN: 3319057502
Category : Science
Languages : en
Pages : 167

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Book Description
Using the nano metric resolution of atomic force microscopy techniques, this work explores the rich fundamental physics and novel functionalities of domain walls in ferroelectric materials, the nano scale interfaces separating regions of differently oriented spontaneous polarization. Due to the local symmetry-breaking caused by the change in polarization, domain walls are found to possess an unexpected lateral piezoelectric response, even when this is symmetry-forbidden in the parent material. This has interesting potential applications in electromechanical devices based on ferroelectric domain patterning. Moreover, electrical conduction is shown to arise at domain walls in otherwise insulating lead zirconate titanate, the first such observation outside of multiferroic bismuth ferrite, due to the tendency of the walls to localize defects. The role of defects is then explored in the theoretical framework of disordered elastic interfaces possessing a characteristic roughness scaling and complex dynamic response. It is shown that the heterogeneous disorder landscape in ferroelectric thin films leads to a breakdown of the usual self-affine roughness, possibly related to strong pinning at individual defects. Finally, the roles of varying environmental conditions and defect densities in domain switching are explored and shown to be adequately modelled as a competition between screening effects and pinning.

Author: Vinod Wadhawan
Publisher: CRC Press
ISBN: 9789056992866
Category : Technology & Engineering
Languages : en
Pages : 768

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Book Description
Ferroic materials are important, not only because of the improved understanding of condensed matter, but also because of their present and potential device applications. This book presents a unified description of ferroic materials at an introductory level, with the unifying factor being the occurrence of nondisruptive phase transitions in crystals that alter point-group symmetry. The book also aims to further systemitize the subject of ferroic materials, employing some formal, carefully worded, definitions and classification schemes. The basic physical principles leading to the wide-ranging applications of ferroic materials are also explained, while placing extra emphasis on the utilitarian role of symmetry in materials science.

Author: Vladimir M. Fridkin
Publisher: Springer Science & Business Media
ISBN: 3642813518
Category : Science
Languages : en
Pages : 179

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Book Description
Since Valasek's discovery of the ferroelectric properties of Rochelle salt nearly 60 years ago, ferroelectricity has been regarded as one of the tradi tional branches of dielectric physics. It has had important applications in lattice dynamics, quantum electronics, and nonlinear optics. The study of electron processes in ferroelectrics was begun with VUL's investigations of the ferroelectric properties of barium titanate [1.1]. In trinsic and extrinsic optical absorption, band structure, conductivity and photoconductivity, carrier mobility. and transport mechanisms were examined in this compound, and in other perovskite ferroelectric semiconductors. An important discovery was that of the highly photosensitive photoconducting ferroelectrics of type AVBVICVIII (e.g. SbSI) by MERZ et al. in 1962 [1.2,3]. A large number of ferroelectric semiconductors (some photosensitive, some not) are now known, including broad-band materials (e.g. lithium niobate, lithium tantalate, barium and strontium niobate, and type-A~B~I compounds), BI and narrow-band semiconductors (e.g. type_AIVB compounds). A series of improper ferroelectric semiconductors and photosensitive ferroelastics have been discovered, of which Sb 0 I is an example. s 7 Owing to the uncertainty of their band structure, the difficulty in deter mining the nature of the levels, the complexity of alloying, and their gen erally low mobility values, ferroelectrics are rarely of interest regarded as nonlinear semiconductors. The most fruitful approach has been the study of the influence of electrons (especially nonequilibrium electrons) and electron excitations on phase transitions and ferroelectric properties. A large group of phenomena have recently been discovered and investigated.

Author: Tomoyuki Kakeshita
Publisher: Springer Science & Business Media
ISBN: 3642209432
Category : Technology & Engineering
Languages : en
Pages : 316

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Book Description
This book brings together an emerging consensus on our understanding of the complex functional materials including ferroics, perovskites, multiferroics, CMR and high-temperature superconductors. The common theme is the existence of many competing ground states and frustration as a collusion of spin, charge, orbital and lattice degrees of freedom in the presence of disorder and (both dipolar and elastic) long-range forces. An important consequence of the complex unit cell and the competing interactions is that the emergent materials properties are very sensitive to external fields thus rendering these materials with highly desirable, technologically important applications enabled by cross-response.

Author: Masanori Okuyama
Publisher: Springer Science & Business Media
ISBN: 9783540241638
Category : Computers
Languages : en
Pages : 272

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Book Description
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.

Author: M. E. Lines
Publisher: Oxford University Press
ISBN: 9780198507789
Category : Science
Languages : en
Pages : 700

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Book Description
This is a standard work on ferroelectrics.