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Author: Yogesh Kumar Sharma
Publisher: BoD – Books on Demand
ISBN: 1789236681
Category : Technology & Engineering
Languages : en
Pages : 154
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Book Description
SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.
Author: Yogesh Kumar Sharma
Publisher: BoD – Books on Demand
ISBN: 1789236681
Category : Technology & Engineering
Languages : en
Pages : 154
Get Book Here
Book Description
SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.
Author: Yogesh Kumar Sharma
Publisher:
ISBN: 9781789236699
Category : Electrical engineering. Electronics. Nuclear engineering
Languages : en
Pages : 152
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Book Description
SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, ""ICSCRM,"" was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.
Author: Zhe Chuan Feng
Publisher: CRC Press
ISBN: 0429583958
Category : Science
Languages : en
Pages : 465
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Book Description
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Author: Muhammad Mustafa Hussain
Publisher: John Wiley & Sons
ISBN: 352734358X
Category : Technology & Engineering
Languages : en
Pages : 284
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Book Description
Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.
Author:
Publisher:
ISBN:
Category : Microwave devices
Languages : en
Pages : 338
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Book Description
Author: Mark J. Mezger
Publisher: CRC Press
ISBN: 1351681265
Category : Technology & Engineering
Languages : en
Pages : 321
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Book Description
This book will take an in-depth look at the technologies, processes, and capabilities to develop and produce "next generation" energetic materials for both commercial and defense applications, including military, mining operations, oil production and well perforation, and construction demolition. It will serve to highlight the critical technologies, latest developments, and the current capability gaps that serve as barriers to military fielding or transition to the commercial marketplace. It will also explain how the processing technologies can be spun out for use in other non-energetics related industries.
Author: Daniel Nenni
Publisher: Createspace Independent Publishing Platform
ISBN: 9781497525047
Category : Integrated circuits industry
Languages : en
Pages : 0
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Book Description
The purpose of this book is to illustrate the magnificence of the fabless semiconductor ecosystem, and to give credit where credit is due. We trace the history of the semiconductor industry from both a technical and business perspective. We argue that the development of the fabless business model was a key enabler of the growth in semiconductors since the mid-1980s. Because business models, as much as the technology, are what keep us thrilled with new gadgets year after year, we focus on the evolution of the electronics business. We also invited key players in the industry to contribute chapters. These "In Their Own Words" chapters allow the heavyweights of the industry to tell their corporate history for themselves, focusing on the industry developments (both in technology and business models) that made them successful, and how they in turn drive the further evolution of the semiconductor industry.
Author: Kevin F. Brennan
Publisher: Cambridge University Press
ISBN: 9781139473811
Category : Technology & Engineering
Languages : en
Pages : 340
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Book Description
From semiconductor fundamentals to semiconductor devices used in the telecommunications and computing industries, this 2005 book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductors. Next, the field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturisation are then addressed. The rest of the book discusses the structure, behaviour, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.
Author: Vitor Monteiro
Publisher: Elsevier
ISBN: 0443139709
Category : Technology & Engineering
Languages : en
Pages : 338
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Book Description
Vehicle Electrification in Modern Power Grids: Disruptive Perspectives on Power Electronics Technology and Control Challenges collects the newest advances in technology for electric vehicle integration into one practical volume for professionals and advanced researchers. The book not only summarizes and clarifies legislation and grid codes for the area, but also outlines the modeling and analytical techniques needed, including predicting power converter reliability and its remaining useful life. Specializing in microgrid clusters, the book provides advanced power electronics device technology from wide-band-gap (WBG) to DSP-based digital control platforms and new materials for passive filters. Blending cutting-edge research and practical technology, this book provides a centralized resource for advanced researchers and engineers looking to accelerate vehicle electrification in the power grid. - Reveals new, disruptive power electronics and modeling technologies to enable EV integration into the grid - Collects guidance on mechanisms for digital control for EV charging and modes of operation, from V2G to G2H - Provides legislation and grid codes needed by engineers working on vehicle electrification in power grids
Author: Dhanasekaran Vikraman
Publisher: BoD – Books on Demand
ISBN: 1789234166
Category : Technology & Engineering
Languages : en
Pages : 168
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Book Description
In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
