Dielectric Properties of Indium Gallium Arsenide/indium Phosphide Multiple Quantum Wells, Films, and Waveguides

Dielectric Properties of Indium Gallium Arsenide/indium Phosphide Multiple Quantum Wells, Films, and Waveguides PDF Author: Albert Leroy Kellner
Publisher:
ISBN:
Category :
Languages : en
Pages : 336

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Dielectric Properties of Indium Gallium Arsenide/indium Phosphide Multiple Quantum Wells, Films, and Waveguides

Dielectric Properties of Indium Gallium Arsenide/indium Phosphide Multiple Quantum Wells, Films, and Waveguides PDF Author: Albert Leroy Kellner
Publisher:
ISBN:
Category :
Languages : en
Pages : 336

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Dissertation Abstracts International

Dissertation Abstracts International PDF Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 608

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Properties of Lattice-matched and Strained Indium Gallium Arsenide

Properties of Lattice-matched and Strained Indium Gallium Arsenide PDF Author: Pallab Bhattacharya
Publisher: Inst of Engineering & Technology
ISBN: 9780852968659
Category : Technology & Engineering
Languages : en
Pages : 317

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The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.

Design Optimization of Indium-gallium-arsenide-phosphide Multi-quantum Well Electroabsorption Modulators

Design Optimization of Indium-gallium-arsenide-phosphide Multi-quantum Well Electroabsorption Modulators PDF Author: Gregory H. Ames
Publisher:
ISBN:
Category : Absorption spectra
Languages : en
Pages : 232

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Ceramic Abstracts

Ceramic Abstracts PDF Author: American Ceramic Society
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 1000

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Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto-electronic Devices

Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto-electronic Devices PDF Author: Daming Huang
Publisher:
ISBN:
Category :
Languages : en
Pages : 228

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In this thesis we investigate the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the quenching of excitons by free carriers has been demonstrated. The comparison of the experimental results with calculations which consider phase space filling, screening, and exchange interaction showed the phase space filling to be the dominant mechanism responsible for the change of oscillator strength and binding energy of excitons associated with partially filled subband. On the other hand, the screening and exchange interaction are equally important to excitons associated with empty subbands. For InGaAs/GaAs strained-layer MQWS, we have demonstrated that the band edges are dramatically modified by strain. We determined the band discontinuities at InGaAs/GaAs interfaces using optical absorption, and showed that in this structure the heavy holes are confined in InGaAs layers while the light holes are in GaAs layers, in contrast to GaAs/AlGaAs MQWS. We also explore applications of GaAs/AlGaAs and InGaAs/GaAs MQWS to opto-electronic devices. The principle of devices investigated is mainly based on the electric field effect on the excitonic absorption in MQWS (the quantum confined Stark effect). Two examples presented in this thesis are the strained-layer InGaAs/GaAs MQWS electroabsorption modulators grown on GaAs substrates and the GaAs/AlGaAs MQWS reflection modulators grown on Si substrates. The large modulation observed in the absorption coefficient by an electric field is expected to facilitate opto-electronic integration.

Japanese Science and Technology

Japanese Science and Technology PDF Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 724

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Masters Theses in the Pure and Applied Sciences

Masters Theses in the Pure and Applied Sciences PDF Author: Wade H. Shafer
Publisher: Springer Science & Business Media
ISBN: 1468436201
Category : Science
Languages : en
Pages : 306

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Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and dis seminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the ac tivity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volume were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 23 (thesis year 1978) a total of 10,148 theses titles from 27 Canadian and 220 United States universities. We are sure that this broader base for theses titles reported will greatly enhance the value of this important annual reference work. While Volume 23 reports these submitted in 1978, on occasion, certain universities do report theses submitted in previous years but not reported at the time.

Electrical and Optical Properties of Semi-insulating and Ion-implanted Gallium-arsenide and Indium-phosphide

Electrical and Optical Properties of Semi-insulating and Ion-implanted Gallium-arsenide and Indium-phosphide PDF Author: Jin Koo Rhee
Publisher:
ISBN:
Category :
Languages : en
Pages : 138

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International Aerospace Abstracts

International Aerospace Abstracts PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 940

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