Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectrode Devices PDF Download
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 21
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Book Description
This report was developed under STTR contract for topic "A06-T019". Inlustra Technologies and the University of California, Santa Barbara conducted a Phase I STTR research program to grow and characterize thick non-polar and semi-polar gallium nitride (GaN) wafers that will act as seeds for subsequent GaN boule growth in Phase II. Inlustra developed non-polar a-plane and m-plane GaN films with smooth surfaces and minimal wafer bowing and cracking. The growth conditions for each crystallographic plane were primarily optimized with respect to surface morphology. Defect reduction methods were then applied to achieve low average extended defect density across the seed wafers. UCSB researchers conducted detailed microstructural characterization on these non-polar and semi-polar GaN thick films to evaluate their utility as seeds for equiaxed GaN boule growth in Phase II.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 21
Get Book Here
Book Description
This report was developed under STTR contract for topic "A06-T019". Inlustra Technologies and the University of California, Santa Barbara conducted a Phase I STTR research program to grow and characterize thick non-polar and semi-polar gallium nitride (GaN) wafers that will act as seeds for subsequent GaN boule growth in Phase II. Inlustra developed non-polar a-plane and m-plane GaN films with smooth surfaces and minimal wafer bowing and cracking. The growth conditions for each crystallographic plane were primarily optimized with respect to surface morphology. Defect reduction methods were then applied to achieve low average extended defect density across the seed wafers. UCSB researchers conducted detailed microstructural characterization on these non-polar and semi-polar GaN thick films to evaluate their utility as seeds for equiaxed GaN boule growth in Phase II.
Author: Tanya Paskova
Publisher: John Wiley & Sons
ISBN: 9783527407682
Category : Science
Languages : en
Pages : 470
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Book Description
This text discusses in detail the present stage of development of nonpolar nitrides, with special emphasis on the three main topics of crystal growth, properties, and device studies. All nonpolar nitride materials and all known growth techniques which are currently under strong investigation are covered.
Author: Stephen J. Pearton
Publisher: Springer Science & Business Media
ISBN: 1846283590
Category : Technology & Engineering
Languages : en
Pages : 383
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Book Description
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Author: Farid Medjdoub
Publisher: CRC Press
ISBN: 1482220040
Category : Technology & Engineering
Languages : en
Pages : 372
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Book Description
Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Author: R. Szweda
Publisher: Elsevier
ISBN: 0080532306
Category : Business & Economics
Languages : en
Pages : 459
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Book Description
The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Author: Roy Szweda
Publisher: Elsevier Science Limited
ISBN: 9781856173438
Category : Technology & Engineering
Languages : en
Pages : 236
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Book Description
Spiral Bound. The first edition of GaN & Related Wide Bandgap Materials & Devices provides a detailed insight into the global developments in GaN, SiC and other opto and electronics materials over the next 5 years and the implication for both suppliers and users of GaN technology.This new profile has been compiled by the publisher of III-Vs Review and has been designed to supply answers to your business decision making and corporate strategy questions by providing detailed market information including: - Market figures and forecasts to 2001. End user application and device market analysis. Geographical demand and supply - North America, Japan, Europe and Rest of World. Analysis of key industry trends: GaN versus SiC for LEDS and lasers, electronic and optoelectronic devices, white lamp replacements, MOVPE and MBE technologies
Author: Hongyu Yu
Publisher: CRC Press
ISBN: 1351767615
Category : Science
Languages : en
Pages : 298
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Book Description
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Author: Rüdiger Quay
Publisher: Springer Science & Business Media
ISBN: 3540718923
Category : Technology & Engineering
Languages : en
Pages : 492
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Book Description
This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Author: Dirk Ehrentraut
Publisher: Springer Science & Business Media
ISBN: 3642048307
Category : Science
Languages : en
Pages : 337
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Book Description
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Author: Bernard Gil
Publisher: Semiconductor Science and Tech
ISBN: 0199681724
Category : Science
Languages : en
Pages : 661
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Book Description
All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.
