Development of Inverted (Al,Ga) as Heterojunction Bipolar Transistors by Molecular Beam Epitaxy PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Development of Inverted (Al,Ga) as Heterojunction Bipolar Transistors by Molecular Beam Epitaxy PDF full book. Access full book title Development of Inverted (Al,Ga) as Heterojunction Bipolar Transistors by Molecular Beam Epitaxy by Bruce Robert Hancock. Download full books in PDF and EPUB format.
Author: Bruce Robert Hancock
Publisher:
ISBN:
Category :
Languages : en
Pages : 182
Get Book Here
Book Description
Author: Bruce Robert Hancock
Publisher:
ISBN:
Category :
Languages : en
Pages : 182
Get Book Here
Book Description
Author: Taeyoung Won
Publisher:
ISBN:
Category :
Languages : en
Pages : 284
Get Book Here
Book Description
Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar transistors (HBTs). The superior high current handling capacity and high operation frequency of heterojunction bipolar transistors have attracted a great deal of interest in millimeter-wave and high-speed digital applications. This thesis details the performance of InAlAs/InGaAs and AlGaAs/GaAs-on-Si HBTs investigated with state-of-the-art results. Carrier transport across the heterointerface, the current conduction mechanism in the base, and related device parameters of the experimental results are emphasized. A theoretical model that relates output characteristics of heterojunction bipolar transistors to the device structure and material properties is developed and presented with an introduction of the junction velocity concept across the heterointerface. A fairly close agreement between experimental results and theoretical calculation of output characteristics is demonstrated. The InAlAs/InGaAs and AlGaAs/GaAs-on-Si heterojunction bipolar transistors exhibited excellent device performance with the best dc current gains, in MBE grown devices, for both n-p-n and p-n-p structures to date. These results indicate the potential of heterojunction bipolar transistors in realizing high-speed, high-power microwave and millimeter-wave integrated circuits and fast digital switching circuits.
Author: B. Khamsehpour
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: Michael James Werner
Publisher:
ISBN:
Category :
Languages : en
Pages : 514
Get Book Here
Book Description
Author: G. I. Hobson
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: Wai Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 316
Get Book Here
Book Description
Author: Sunil Thomas
Publisher:
ISBN:
Category :
Languages : en
Pages : 174
Get Book Here
Book Description
Author: Hao-Chung Kuo
Publisher:
ISBN:
Category :
Languages : en
Pages : 190
Get Book Here
Book Description
Author: Pui Leng Lam
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1146
Get Book Here
Book Description
