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Author: Peter Ashburn
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 222
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Book Description
Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Author: Peter Ashburn
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 222
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Book Description
Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Author: M. Jeroen Fonderie
Publisher: Springer Science & Business Media
ISBN: 146153142X
Category : Technology & Engineering
Languages : en
Pages : 201
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Book Description
Design of Low-Voltage Bipolar Operational Amplifiers discusses the sub-circuits necessary to build a low-voltage operational amplifier. These include rail-to-rail input stages, rail-to-rail output stages, intermediate stages, protection circuitry and frequency compensation techniques. Of each of these, various implementations are examined. Furthermore, the book discusses realizations in silicon of the amplifiers. The design and implementation of low-voltage bipolar Operational Amplifiers (OpAmps) is fully presented. A low supply voltage is necessary because the tendency towards chip components of smaller dimensions lowers the breakdown voltage of these components. Further, a low supply voltage is favorable because it enables operation of the OpAmp from just one single battery cell. The bipolar technology is chosen, because it is more suited for operation at low-voltages than the MOS technology. The common-mode input voltage of the OpAmp must be able to have any value that fits within the supply voltage range. Input stages are discussed which are able to realize this at supply voltages down to 1.8 V, as well as down to 1 V. The output voltage of the OpAmp must be able to have any value within the supply voltage range. One of the 1 V output stages that is discussed, the multi-path driven output stage, also has a high bandwidth with a high gain. In addition to the input and output stage, the OpAmp comprises an intermediate stage, between the input stage and the output stage, to boost the overall gain of the OpAmp, and a class AB current control. A frequency compensation technique is used to split apart the pole frequencies in the transfer function. A disadvantage of this nested Miller compensation, is that the resulting bandwidth is reduced by a factor of two. A new method, multi-path-driven Miller compensation, which does not have this drawback, is therefore introduced. Several realizations are evaluated and a figure of merit is defined for the performance comparison of the OpAmps. One of the OpAmps operates at a 1 V supply, has a 3.4 MHz bandwidth with a 100 pF load and has a 700 &mgr;A supply current. The book is an excellent reference for professional designers of amplifiers and may be used as a text for advanced courses on the subject.
![Realizing Vertical Bipolar Transistors in a Standard CMOS Technology for the Design of Low-cost BiCMOS Integrated Circuits [microform] PDF](https://books.google.com/books/content/images/frontcover/aSB5tgAACAAJ?fife=w80-h100)
Author: Farshid Rezaei
Publisher: Library and Archives Canada = Bibliothèque et Archives Canada
ISBN: 9780612953635
Category :
Languages : en
Pages : 110
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Book Description
This thesis describes the realization of isolated vertical npn transistors in generic CMOS technologies. An improved layout for these parasitic transistors is proposed. The electrical characteristics and modelling of the proposed device are presented. The design, realization, and fabrication of a high-speed open-loop preamplifier using these bipolar transistors are also presented. The preamplifier was found to have more than a 1 GHz bandwidth as well as less than -35 dB THD, as was verified using die-probe measurements. The amplifier achieved 10.4 dB gain and a 0 dBm IIP3. The collector-base and the collector-emitter breakdown voltages are 14.8V and 9V, respectively. The output impedance and noise characteristics are comparatively good. The measured current gains, on the order of 20, are less than what would be preferred, but not excessively so, and the unity-gain frequencies on the order of 4 GHz, are much less than would be the case for a vertical npn in a typical BiCMOS process, but still are adequate for many applications.
Author: Wai-Kai Chen
Publisher: CRC Press
ISBN: 9781420049671
Category : Technology & Engineering
Languages : en
Pages : 1788
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Book Description
Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.
Author: Michael Schrter
Publisher: World Scientific
ISBN: 981427321X
Category : Technology & Engineering
Languages : en
Pages : 753
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Book Description
Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Author: Jung-Kai Hong
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 190
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Book Description
Author: Allen A. Sweet
Publisher: Artech House
ISBN: 1596931280
Category : Technology & Engineering
Languages : en
Pages : 330
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Book Description
If you're looking for an in-depth and up-to-date understanding bipolar transistor RFIC design, this practical resource is a smart choice. Unlike most books on the market that focus on GaAs MESFET or silicon CMOS process technology, this unique volume is dedicated exclusively to RFIC designs based on bipolar technology. Until now, critical GaAs HBT and SiGe HBT process technologies have been largely neglected in reference books. This book fills this gap, offering you a detailed treatment of this increasingly important topic. You discover a wide range of circuit topologies that are optimized for maximum performance with bipolar devices. From discussions of key applications (Bluetooth, UWB, GPS, WiMax) and architectures… to in-depth coverage of fabrication technologies and amplifier design… to a look at performance tradeoffs and production costs, this book arms you with complete design know-how for your challenging work in the field.
Author: Antonio R. Alvarez
Publisher: Springer Science & Business Media
ISBN: 1461532183
Category : Technology & Engineering
Languages : en
Pages : 412
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Book Description
BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.
Author: Ian E. Getreu
Publisher: Elsevier Science & Technology
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 294
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Book Description
Author: Konstantinos Konistis
Publisher:
ISBN:
Category :
Languages : en
Pages : 126
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Book Description
(Cont.) features but the device self-heating turned out to be crucial for the longevity of the base micro-airbridges. The short lifetime of the base micro-airbridges was prohibitive for the realization of high frequency measurements. This work serves as the foundation for the implementation of robust HBT transit-time oscillators with the incorporation of slight modifications in the fabrication process.
