Design and Performance Trade-offs in IGBT Modules for Hard- and Soft-switching Applications PDF Download
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Author: Sameer P. Pendharkar
Publisher:
ISBN:
Category :
Languages : en
Pages : 304
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Book Description
Author: Sameer P. Pendharkar
Publisher:
ISBN:
Category :
Languages : en
Pages : 304
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Book Description
Author: Malay Trivedi
Publisher:
ISBN:
Category :
Languages : en
Pages : 324
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Book Description
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1904
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Book Description
Author: Andreas Volke
Publisher:
ISBN: 9783000401343
Category : Insulated gate bipolar transistors
Languages : en
Pages : 534
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Book Description
Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 344
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Book Description
Author: Vinod Kumar Khanna
Publisher: John Wiley & Sons
ISBN: 047166099X
Category : Technology & Engineering
Languages : en
Pages : 648
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Book Description
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Author: Hongyu Yu
Publisher: CRC Press
ISBN: 1351767615
Category : Science
Languages : en
Pages : 308
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Book Description
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Author: IEEE Industry Applications Society. Meeting
Publisher:
ISBN:
Category : Electric machinery
Languages : en
Pages : 800
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Book Description
Author: Gourab Majumdar
Publisher:
ISBN: 9781351262323
Category : Science
Languages : en
Pages : 0
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Book Description
The growth of power electronics, centering on inverters and converters as its key system topology, has accelerated recently due to the demand for efficient power conversion. This growth has also been backed up by several evolutionary changes and breakthroughs achieved in the areas of power semiconductor device physics, process technology, and design. However, as power semiconductor technology remains a highly specialized subject, the literature on further research, development, and design in related fields is not adequate. With this in view, two specialists of power semiconductors, well known for their research and contributions to the field, compiled this book as a review volume focusing on power chip and module technologies. The prime purpose is to help researchers, academia, and engineers, engaged in areas related to power devices and power electronics, better understand the evolutionary growth of major power device components, their operating principles, design aspects, application features, and trends. The book is filled with unique topics related to power semiconductors, including tips on state-of-the-art and futuristic-oriented applications. Numerous diagrams, illustrations, and graphics are included to adequately support the content and to make the book extremely attractive as a practical and user-friendly reference book for researchers, technologists, and engineers, as well as a textbook for advanced graduate-level and postgraduate students.
Author: B. Jayant Baliga
Publisher: William Andrew
ISBN: 1455731536
Category : Technology & Engineering
Languages : en
Pages : 733
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Book Description
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. - Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. - Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. - The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.
