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Author: Vivek Saxena
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
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Author: Vivek Saxena
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
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Book Description
Author: Luo, Xixi
Publisher:
ISBN:
Category :
Languages : en
Pages : 116
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Book Description
A novel design of mesa-etch termination and Superjunction JBS diode structure has been proposed and optimized. The new mesa-etch termination can achieve over 90% of ideal maximal breakdown voltage within a wide sidewall implant dose window (~9e16 cm−3). Besides the high tolerance on implant dose, the proposed design also exhibits high tolerance on the etch sidewall angle: minimal maximum breakdown voltage was observed with etch sidewall angle variations. The Superjunction JBS diode can obtain both 96.4% maximum super junction breakdown voltage and 76.6% JBS Schottky surface electric field reduction. The super junction maximal breakdown voltage is 1.5 times large as the conventional Schottky diode breakdown voltage and the leakage current is logarithmically related to the surface electric field. The superior breakdown voltage represents a large improvement on the power rectifier performance. Based on these structure improvements, vertical 4H-SiC Schottky Diodes have been fabricated and tested. Vertical 4H-SiC Schottky Diode without any edge termination has a breakdown voltage as large as 692 V and exhibits an on-state specific resistance as small as 7.9 mΩ*cm2. Such breakdown voltage is much higher than simulation results. In the meantime, on-state resistance is also much larger than the simulation results. The mechanism for these improved power rectifier performances will be furthered investigated in future studies
Author: Konstantinos Zekentes
Publisher: Materials Research Forum LLC
ISBN: 1945291850
Category : Technology & Engineering
Languages : en
Pages : 249
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Book Description
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Author: Dominique Johanne Morrison
Publisher:
ISBN:
Category :
Languages : en
Pages : 171
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Book Description
Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313550
Category : Technology & Engineering
Languages : en
Pages : 565
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Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: Dominique Johanne Morrison
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Maurizio Di Paolo Emilio
Publisher: Springer Nature
ISBN: 3031634187
Category :
Languages : en
Pages : 317
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Book Description
Author: Michael Shur
Publisher: World Scientific
ISBN: 9812568352
Category : Technology & Engineering
Languages : en
Pages : 342
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Book Description
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author: Yi Min Cai
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Kenneth A. Monnig
Publisher:
ISBN:
Category : Diodes, Schottky-barrier
Languages : en
Pages : 284
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Book Description
