Author: Jeffery L Johnson
Publisher:
ISBN:
Category :
Languages : en
Pages : 340
Book Description
Design and Demonstration of InAs/ Ga1-xInxSb Strained-layer Superlattices Optimized for Long-wavelength Infrared Detectors.[dissertation].
Author: Jeffery L Johnson
Publisher:
ISBN:
Category :
Languages : en
Pages : 340
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 340
Book Description
Design and Demonstration of InAs/ Ga1a//b1-xIn//bxSb Strained-layer Superlattices Optimized for Long-wavelength Infrared Detectors
Author: Jeffery L Johnson
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Medium- and Long-wavelength InAs/InAsSb Strained-layer Superlattices for Applications in Infrared NBn Detectors
Author: Veronica Letka
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Materials Science and Technology: Strained-Layer Superlattices
Author:
Publisher: Academic Press
ISBN: 0080864309
Category : Technology & Engineering
Languages : en
Pages : 443
Book Description
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Publisher: Academic Press
ISBN: 0080864309
Category : Technology & Engineering
Languages : en
Pages : 443
Book Description
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Band Structures of InAsSb Strained-layer Superlattices for Long-wavelength Infrared Detectors
Author: Lifeng Liu
Publisher:
ISBN:
Category : Superlattices as materials
Languages : en
Pages : 78
Book Description
Publisher:
ISBN:
Category : Superlattices as materials
Languages : en
Pages : 78
Book Description
On the Growth and Properties of InAs/Ga1-xInxSb Superlattices and Related Materials
Author: Jöran H. Roslund
Publisher:
ISBN: 9789171974938
Category :
Languages : en
Pages : 82
Book Description
Publisher:
ISBN: 9789171974938
Category :
Languages : en
Pages : 82
Book Description
The Growth of InAs{sub 1-x}Sbx/InAs Strained-layer Superlattices by Metal-organic Chemical Vapor Deposition
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 14
Book Description
InAs{sub 1-x}Sbx/InAs strained-layer superlattice (SLS) semiconductors and thick epitaxial layers of InAs{sub 1-x}Sbx were grown under a variety of conditions by metal-organic chemical vapor deposition on InAs substrates. The III/V ratio was varied from 0.026 to 1.0 over a temperature range of 475--525C, at pressures of 200 to 660 torr and growth rates of 0.75 to 3.0?m/hour. The composition of the ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. These layers were characterized by optical microscopy, SIMS, and x-ray diffraction. The optical properties of these SLS̀s were determined by infrared photoluminescence and absorption measurements. The PL peak energies of the alloys̀ and the SLS̀s are consistently lower than the previously reported values for the bandgap of InAs{sub 1-x}Sbx alloys.
Publisher:
ISBN:
Category :
Languages : en
Pages : 14
Book Description
InAs{sub 1-x}Sbx/InAs strained-layer superlattice (SLS) semiconductors and thick epitaxial layers of InAs{sub 1-x}Sbx were grown under a variety of conditions by metal-organic chemical vapor deposition on InAs substrates. The III/V ratio was varied from 0.026 to 1.0 over a temperature range of 475--525C, at pressures of 200 to 660 torr and growth rates of 0.75 to 3.0?m/hour. The composition of the ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. These layers were characterized by optical microscopy, SIMS, and x-ray diffraction. The optical properties of these SLS̀s were determined by infrared photoluminescence and absorption measurements. The PL peak energies of the alloys̀ and the SLS̀s are consistently lower than the previously reported values for the bandgap of InAs{sub 1-x}Sbx alloys.
Strained-layer Superlattices
Author: T. P. Pearsall
Publisher:
ISBN:
Category : Electronic books
Languages : en
Pages : 456
Book Description
Publisher:
ISBN:
Category : Electronic books
Languages : en
Pages : 456
Book Description
Strained Layer Superlattices
Author: Thomas P. Pearsall
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Optical Characterization of InxGa1-xSb/InAs Strained Layer Superlattices
Author: Keh-Young Adam Chi
Publisher:
ISBN:
Category : Infrared spectroscopy
Languages : en
Pages : 186
Book Description
Publisher:
ISBN:
Category : Infrared spectroscopy
Languages : en
Pages : 186
Book Description