Design and Assessment of Fabry-Perot Quantum Well Electroabsorption Optical Modulators PDF Download
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Author: Paraskevi Zouganeli
Publisher:
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Languages : en
Pages : 0
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Author: Paraskevi Zouganeli
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ISBN:
Category :
Languages : en
Pages : 0
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Author: Kwok Keung Cisco Law
Publisher:
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Category :
Languages : en
Pages : 432
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Author: Justin Hannah Hodiak
Publisher:
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Category :
Languages : en
Pages : 688
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Author: G. D. Boyd
Publisher:
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Category :
Languages : en
Pages : 5
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Following the demonstration of the absorption reflection modulator 1, many workers 2-10 have used Fabry-Perot resonators to improve the limited contrast ratio of these multiple quantum well light modulators. Most experiments have been in the normally on (Non), spectral region where absorption increases with field. Using field dependent GaAs/AlGaAs quantum well absorption data, we have created a model that calculates the reflectivity and contrast ratio of resonant and non-resonant modulators in both the normally off (Noff), region where absorption decreases with field, and the normally on (Non) spectral regions for use with photonic devices such as the self-electrooptic effect device (SEEDs). ne calculations include both electro-absorption and electro-refraction effects.
Author: Robert Ian Killey
Publisher:
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Category :
Languages : en
Pages : 0
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Author: Yili Guo
Publisher: Chinese University Press
ISBN: 9789622018617
Category : Science
Languages : en
Pages : 436
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This book systematically discusses the nonlinearities in optics, optoelectronics and fiber communications. The theory of optical nonlinearity ties closely with the fiber communication technologies and the applied optoelectronics.
Author: Ross Michael Audet
Publisher:
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Languages : en
Pages :
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Today's computer systems are constrained by the high power consumption and limited bandwidth of inter- and intra-chip electrical interconnections. Optical links could alleviate these problems, provided that the optical and electronic elements are tightly integrated. Most present optical modulators use materials systems that are incompatible with CMOS device fabrication, or rely on weak electrooptic effects that are difficult to utilize for vertical incidence devices. The extremely high communications bandwidth demands of future silicon chips may ultimately require massively parallel free-space optical links based on array integration of such vertical incidence modulators. We have investigated the suitability of surface-normal asymmetric Fabry-Perot electroabsorption modulators for short-distance optical interconnections between silicon chips. These modulators should be made as small as possible to minimize device capacitance; however, size-dependent optical properties impose constraints on the dimensions. We have thus performed simulations that demonstrate how the optical performance of the modulators depends on both the spot size of the incident beam and the dimensions of the device. We also discuss the tolerance to nonidealities such as surface roughness and beam misalignment. The particular modulators considered here are structures based upon the quantum-confined Stark effect in Ge/SiGe quantum wells. We present device designs that have predicted extinction ratios greater than 7 dB and switching energies as low as 10 fF/bit, which suggests that these CMOS-compatible devices can enable high interconnect bandwidths without the need for wavelength division multiplexing. Next, we present experimental results from these Ge/SiGe asymmetric Fabry-Perot modulators. Several approaches were investigated for forming resonant cavities using high-index-contrast Bragg mirrors around the Ge/SiGe quantum well active regions. These include fabrication on double-silicon-on-insulator reflecting substrates, a layer transfer and etch-back process using anodic bonding, and alkaline etching the backside of the Si substrate to leave suspended SiGe membranes. We present results from each of these modulator structures. The best performance is achieved from the SiGe membrane modulators, which are the first surface-normal resonant-cavity reflection modulators fabricated entirely on standard silicon substrates. Electroabsorption and electrorefraction both contribute to the reflectance modulation. The devices exhibit greater than 10 dB extinction ratio with low insertion loss of 1.3 dB. High-speed modulation with a 3 dB bandwidth of 4 GHz is demonstrated. The moderate-Q cavity (Q~600) yields an operating bandwidth of more than 1 nm and permits operation without active thermal stabilization.
Author: D. Thomas
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
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Vertical optical modulators utilizing the large absorption changes in quantum wells are promising for optical computing and optical interconnect technologies. While normally-on devices can be applied to interconnect technologies, normally-off reflection or transmission modulators presenting negative differential conductivity are required for producing bistability, in various Self Electo-optic Effect Device (SEED)1-2 configurations. Reflection Electro-Absorption Modulators (REAMs) that use a Fabry-Perot (F-P) cavity have demonstrated high contrast and low insertion loss3 for normally-on devices. The highest performance devices so far have used the Quantum Confined Stark Effect (QCSE) to increase the optical absorption and consequently change the reflectivity of the device with voltage. The F-P mode of the cavity is usually designed to be below the exciton energy, and the front mirror reflectivity is kept low. These devices use the large absorption change of QCSE and have very low residual absorption since they work below the absorption edge, but are of normally-on type, the higher reflectivity occurring at zero bias. Normally-off transmission or reflection modulators, so far, have always exploited a decrease in absorption at the operating wavelength. They can operate at the exciton wavelength at zero voltage and shift the exciton with bias, utilizing the QCSE1,2,4. This method, however, leads to lower absorption ratios due to transitions into the quantum well continuum. These tend to lower performance, generally increasing the insertion loss in the on-state.
Author: Uzi Efron
Publisher: CRC Press
ISBN: 9780824791087
Category : Technology & Engineering
Languages : en
Pages : 688
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This work offers comprehensive coverage of all aspects of spatial light modulators, from the various optical materials used for modulation, through the availability and characteristics of specific devices, to the main applications of SLMs and related systems. The gamut of SLMs is surveyed, including multiple-quantum-well, acousto-optical, magneto-optical, deformable-membrane, ferroelectric-liquid-crystal and smart-pixel modulators.
Author: Ran-Hong Yan
Publisher:
ISBN:
Category :
Languages : en
Pages : 2
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In the search for practical optical modulators for optical switching, communications, and interconnections, various device parameters need to be optimized, and the optimization should depend on the applications. For large array applications, surface-normal modulators are preferred. Because of the enhanced optoelectronic interaction length available in resonators without actually increasing the active region thickness, and the cavity balance provided by the resonance, devices with Fabry-Perot structures have both low operating voltage and high-contrast advantages.
