The role of defects at functional interfaces between polar and non-polar perovskite oxides PDF Download
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Author: Felix Gunkel
Publisher: Forschungszentrum Jülich
ISBN: 3893369023
Category :
Languages : en
Pages : 181
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Book Description
Author: Felix Gunkel
Publisher: Forschungszentrum Jülich
ISBN: 3893369023
Category :
Languages : en
Pages : 181
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Book Description
Author: Irina Kärkkänen
Publisher: Forschungszentrum Jülich
ISBN: 3893369716
Category :
Languages : en
Pages : 151
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Book Description
Author: Annemarie Köhl
Publisher: Forschungszentrum Jülich
ISBN: 3893369880
Category :
Languages : en
Pages : 181
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Book Description
Author: ConferenceSeries
Publisher: ConferenceSeries
ISBN:
Category :
Languages : en
Pages : 212
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Book Description
June 11-13, 2018 Barcelona, Spain Key Topics : Materials Science and Engineering, Nanomaterials and Nanotechnology, Biomaterials and Medical Devices, Polymer Science and Technology, Ceramics and Composite Materials, Electronic, Optical and Magnetic Materials, Emerging Smart Materials, Materials for Energy and Environmental Sustainability, Physics and Chemistry of Materials, Metals, Mining, Metallurgy and Materials, Mechanics, Characterization Techniques and Equipments, Graphene and 2D Materials,
Author: Nini Pryds
Publisher: Elsevier
ISBN: 0081017529
Category : Technology & Engineering
Languages : en
Pages : 562
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Book Description
Metal Oxide-Based Thin Film Structures: Formation, Characterization and Application of Interface-Based Phenomena bridges the gap between thin film deposition and device development by exploring the synthesis, properties and applications of thin film interfaces. Part I deals with theoretical and experimental aspects of epitaxial growth, the structure and morphology of oxide-metal interfaces deposited with different deposition techniques and new developments in growth methods. Part II concerns analysis techniques for the electrical, optical, magnetic and structural properties of thin film interfaces. In Part III, the emphasis is on ionic and electronic transport at the interfaces of Metal-oxide thin films. Part IV discusses methods for tailoring metal oxide thin film interfaces for specific applications, including microelectronics, communication, optical electronics, catalysis, and energy generation and conservation. This book is an essential resource for anyone seeking to further their knowledge of metal oxide thin films and interfaces, including scientists and engineers working on electronic devices and energy systems and those engaged in research into electronic materials. - Introduces the theoretical and experimental aspects of epitaxial growth for the benefit of readers new to the field - Explores state-of-the-art analysis techniques and their application to interface properties in order to give a fuller understanding of the relationship between macroscopic properties and atomic-scale manipulation - Discusses techniques for tailoring thin film interfaces for specific applications, including information, electronics and energy technologies, making this book essential reading for materials scientists and engineers alike
Author: Wen Siang Lew
Publisher: Springer Nature
ISBN: 9811569126
Category : Science
Languages : en
Pages : 439
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Book Description
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author: Jing Zhang
Publisher: Springer
ISBN: 3319599062
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
This book explores the recent developments, perspectives on future research, and pertinent data from academia, industry, and government research laboratory to discuss fundamental mechanisms as well as processing and applications of advanced metallic and ceramic thin film and coating materials for energy and environmental applications. It is a platform to disseminate the latest research progress related to processing, characterization, and modelling. The authors address both thermal barrier and environmental coatings; magnetic and thermoelectric materials; and solar cell and solid oxide fuel cell materials. It is appropriate supplementary reading for students and primary reading for researchers in materials science and engineering.
Author: Jennifer Rupp
Publisher: Springer Nature
ISBN: 3030424243
Category : Technology & Engineering
Languages : en
Pages : 386
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Book Description
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.
Author: Lutz Stephan Nielen
Publisher: BoD – Books on Demand
ISBN: 3751972862
Category : Technology & Engineering
Languages : en
Pages : 174
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Book Description
The upcoming trends in information technology follow irresistibly the predicted changes of the Internet of Things (IoT). That requires enhanced performance of mobile electronics, thus memory techniques face a growing number of challenges. Redox-based resistive switches (ReRAM) are highly attractive devices for implementation of ultimately-scaled energy-efficient memories. In this thesis, associative memories and sorting networks based on resistive switches are investigated. These cognitive functions highlight the potential of brain inspired computing in memory and are considered as a key-enabler for beyond von-Neumann computer architectures.
Author: Yoshio Nishi
Publisher: Woodhead Publishing
ISBN: 0081025858
Category : Technology & Engineering
Languages : en
Pages : 664
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Book Description
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. - Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories - Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping and resistive random access memory
