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Author: Shyam P. Murarka
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 376
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Book Description
A complete guide to the state of the art and future direction of copper interconnect technology Owing to its performance advantages, copper metallization for IC interconnect is attracting tremendous interest in the semiconductor community worldwide. This timely book provides scientists and engineers with a much-needed, comprehensive reference on the fundamentals and applications of this emerging technology. The authors draw on more than a decade of intimate involvement with copper interconnect research, integrating the vast amounts of available knowledge and making clear the connection between mechanistic principles and relevant technologies. In-depth, cutting-edge discussions include: * The effects of copper in semiconductor materials, especially silicon * The fundamental chemistry and electro-chemistry of copper * The effects of copper on insulating materials such as glass and polymers * Intermetallic and interfacial reactions of copper in layered structures * Current and projected applications of copper in integrated circuits Copper-Fundamental Mechanisms for Microelectronic Applications also features extensive references, tables, and over 100 illustrations-including dual Damascene patterning necessary for copper interconnects. It is an excellent resource for anyone seeking to explore the current literature and gain insight into opportunities opening in the field.
Author: Shyam P. Murarka
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 376
Get Book Here
Book Description
A complete guide to the state of the art and future direction of copper interconnect technology Owing to its performance advantages, copper metallization for IC interconnect is attracting tremendous interest in the semiconductor community worldwide. This timely book provides scientists and engineers with a much-needed, comprehensive reference on the fundamentals and applications of this emerging technology. The authors draw on more than a decade of intimate involvement with copper interconnect research, integrating the vast amounts of available knowledge and making clear the connection between mechanistic principles and relevant technologies. In-depth, cutting-edge discussions include: * The effects of copper in semiconductor materials, especially silicon * The fundamental chemistry and electro-chemistry of copper * The effects of copper on insulating materials such as glass and polymers * Intermetallic and interfacial reactions of copper in layered structures * Current and projected applications of copper in integrated circuits Copper-Fundamental Mechanisms for Microelectronic Applications also features extensive references, tables, and over 100 illustrations-including dual Damascene patterning necessary for copper interconnects. It is an excellent resource for anyone seeking to explore the current literature and gain insight into opportunities opening in the field.
Author: Yuzhuo Li
Publisher: John Wiley & Sons
ISBN: 9780471719199
Category : Science
Languages : en
Pages : 734
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Book Description
An authoritative, systematic, and comprehensive description of current CMP technology Chemical Mechanical Planarization (CMP) provides the greatest degree of planarization of any known technique. The current standard for integrated circuit (IC) planarization, CMP is playing an increasingly important role in other related applications such as microelectromechanical systems (MEMS) and computer hard drive manufacturing. This reference focuses on the chemical aspects of the technology and includes contributions from the foremost experts on specific applications. After a detailed overview of the fundamentals and basic science of CMP, Microelectronic Applications of Chemical Mechanical Planarization: Provides in-depth coverage of a wide range of state-of-the-art technologies and applications Presents information on new designs, capabilities, and emerging technologies, including topics like CMP with nanomaterials and 3D chips Discusses different types of CMP tools, pads for IC CMP, modeling, and the applicability of tribometrology to various aspects of CMP Covers nanotopography, CMP performance and defect profiles, CMP waste treatment, and the chemistry and colloidal properties of the slurries used in CMP Provides a perspective on the opportunities and challenges of the next fifteen years Complete with case studies, this is a valuable, hands-on resource for professionals, including process engineers, equipment engineers, formulation chemists, IC manufacturers, and others. With systematic organization and questions at the end of each chapter to facilitate learning, it is an ideal introduction to CMP and an excellent text for students in advanced graduate courses that cover CMP or related semiconductor manufacturing processes.
Author: Yosi Shacham-Diamand
Publisher: Springer Science & Business Media
ISBN: 0387958681
Category : Science
Languages : en
Pages : 545
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Book Description
In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.
Author: Tapan Gupta
Publisher: Springer Science & Business Media
ISBN: 1441900764
Category : Technology & Engineering
Languages : en
Pages : 433
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Book Description
Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Author: Hansjörg Lipowsky
Publisher: John Wiley & Sons
ISBN: 3527611649
Category : Technology & Engineering
Languages : en
Pages : 192
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Book Description
A comprehensive and substantial source of information on the properties, production, processing and applications of copper and copper alloys, of interest to metallurgical, development, design and testing engineers in the automotive and other industries using copper. The authority behind this book - the German Copper Institute - was founded in 1927 and is the technical-scientific advisory center for all questions concerning applications and the processing of copper and copper alloys in Germany. For more than 75 years, the technical scientific advisory and information service of the institute has been providing expert help free of charge. It is supported by the copper industry, the European Copper Institute (ECI) and The International Copper Association. It is competent and active in matters concerning the use of copper not only in automotive but also in all kind of industrial applications, in building construction, in electrical engineering and in questions concerning copper's importance for health.
Author: ASM International
Publisher: ASM International
ISBN: 1615030905
Category : Technology & Engineering
Languages : en
Pages : 372
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Book Description
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Author: Cor L. Claeys
Publisher: The Electrochemical Society
ISBN: 9781566773089
Category : Technology & Engineering
Languages : en
Pages : 636
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Book Description
Author: G. S. Mathad
Publisher: The Electrochemical Society
ISBN: 9781566773935
Category : Technology & Engineering
Languages : en
Pages : 438
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Book Description
Author: Ming He
Publisher: Springer Science & Business Media
ISBN: 1461418127
Category : Technology & Engineering
Languages : en
Pages : 155
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Book Description
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.
Author: Aloke Paul
Publisher: Elsevier
ISBN: 0128045787
Category : Science
Languages : en
Pages : 478
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Book Description
Handbook of Solid State Diffusion, Volume 2: Diffusion Analysis in Material Applications covers the basic fundamentals, techniques, applications, and latest developments in the area of solid-state diffusion, offering a pedagogical understanding for students, academicians, and development engineers. Both experimental techniques and computational methods find equal importance in the second of this two volume set. Volume 2 covers practical issues on diffusion phenomena in bulk, thin film, and in nanomaterials. Diffusion related problems and analysis of methods in industrial applications, such as electronic industry, high temperature materials, nuclear materials, and superconductor materials are discussed. - Presents a handbook with a short mathematical background and detailed examples of concrete applications of the sophisticated methods of analysis - Enables readers to learn the basic concepts of experimental approaches and the computational methods involved in solid-state diffusion - Covers bulk, thin film, and nanomaterials - Introduces the problems and analysis in important materials systems in various applications - Collates contributions from academic and industrial problems from leading scientists involved in developing key concepts across the globe
