Author: Shang Yun Hou
Publisher:
ISBN:
Category : High temperature superconductivity
Languages : en
Pages : 284
Book Description
Control of Properties of Epitaxial YBa2Cu3O---[delta] Thin Films Grown by Co-evaporation and Post Annealing
Author: Shang Yun Hou
Publisher:
ISBN:
Category : High temperature superconductivity
Languages : en
Pages : 284
Book Description
Publisher:
ISBN:
Category : High temperature superconductivity
Languages : en
Pages : 284
Book Description
International aerospace abstracts
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1060
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1060
Book Description
Study of Epitaxial Thin Films of Yba2cu3o7-[Delta] on Silicon with Different Buffer Layers
Author: Engang Fu
Publisher: Open Dissertation Press
ISBN: 9781374667174
Category :
Languages : en
Pages :
Book Description
This dissertation, "Study of Epitaxial Thin Films of YBa2Cu3O7-[delta] on Silicon With Different Buffer Layers" by Engang, Fu, 付恩剛, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled STUDY OF EPITAXIAL THIN FILMS OF YBa Cu O ON 2 3 7-δ SILICON WITH DIFFERENT BUFFER LAYERS submitted by Fu Engang for the degree of Master of Philosophy at The University of Hong Kong in August 2005 Silicon is the most widely used semiconductor in the microelectronic industry. Highly epitaxial thin films of YBa Cu O (YBCO) grown on Si wafers are of 2 3 7-δ special interest for development of superconductor/semiconductor hybrid microelectronic devices and circuits. However, severe interaction between Si and YBCO layer, large mismatch in their lattice constant, and strain due to different thermal expansion often degrade the crystallinity and superconductivity of the grown YBCO layers. In this study, yttria-stabilized zirconia (YSZ) and Eu CuO (ECO) 2 4 were introduced as double buffer layers to improve the growth and properties of the YBCO thin films grown on silicon. Preparation and characterization of epitaxial YBCO/ECO/YSZ/Si multilayer structures were studied. YBCO thin films and the double buffer layers of ECO/YSZ were deposited on the silicon (100) substrate by the pulsed laser deposition (PLD) method. Firstly, the YSZ thin layer was grown epitaxially on silicon (100) substrate to separate YBCO from the Si substrate. Effects of substrate temperature and operating gas pressure on the structure and surface roughness of YSZ thin film were examined and the optimum deposition parameters were determined based on experimental results and comprehensive analysis. X-Ray diffraction (XRD) patterns and rocking curve revealed an epitaxial growth with a perfect c-axis orientation. The YSZ thin films grown on silicon substrate have smooth surface, providing a base on which ECO and YBCO thin film can be grown epitaxially. To further improve the quality of YBCO films, an additional layer of ECO with very stable 214-T' crystal structure was inserted between YBCO and YSZ/Si. The influence of substrate temperature and oxygen gas pressure on the properties of ECO thin films grown on YSZ/Si were experimentally analyzed and the growth conditions were optimized. Finally, the epitaxial YBCO thin films were grown on silicon substrate with double buffer layers of ECO/YSZ. The influences of substrate temperature, oxygen gas pressure and different buffer layers on the properties of YBCO thin films were studied. It was found that the crystal structure, surface roughness and superconductivity of YBCO films could be significantly improved by adding such a double buffer of ECO/YSZ. The quality of the YBCO thin films has been significantly enhanced when compared with that grown on Si with a single YSZ buffer layer and with double buffer layers of Nd CuO (NCO)/YSZ. Such highly 2 4 epitaxial thin films of YBCO grown on silicon should be of great interest for various applications including high-frequency elements, millimeter-wave receivers, and superconducting quantum interference devices. DOI: 10.5353/th_b3637488 Subjects: Thin films Silicon Epitaxy
Publisher: Open Dissertation Press
ISBN: 9781374667174
Category :
Languages : en
Pages :
Book Description
This dissertation, "Study of Epitaxial Thin Films of YBa2Cu3O7-[delta] on Silicon With Different Buffer Layers" by Engang, Fu, 付恩剛, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled STUDY OF EPITAXIAL THIN FILMS OF YBa Cu O ON 2 3 7-δ SILICON WITH DIFFERENT BUFFER LAYERS submitted by Fu Engang for the degree of Master of Philosophy at The University of Hong Kong in August 2005 Silicon is the most widely used semiconductor in the microelectronic industry. Highly epitaxial thin films of YBa Cu O (YBCO) grown on Si wafers are of 2 3 7-δ special interest for development of superconductor/semiconductor hybrid microelectronic devices and circuits. However, severe interaction between Si and YBCO layer, large mismatch in their lattice constant, and strain due to different thermal expansion often degrade the crystallinity and superconductivity of the grown YBCO layers. In this study, yttria-stabilized zirconia (YSZ) and Eu CuO (ECO) 2 4 were introduced as double buffer layers to improve the growth and properties of the YBCO thin films grown on silicon. Preparation and characterization of epitaxial YBCO/ECO/YSZ/Si multilayer structures were studied. YBCO thin films and the double buffer layers of ECO/YSZ were deposited on the silicon (100) substrate by the pulsed laser deposition (PLD) method. Firstly, the YSZ thin layer was grown epitaxially on silicon (100) substrate to separate YBCO from the Si substrate. Effects of substrate temperature and operating gas pressure on the structure and surface roughness of YSZ thin film were examined and the optimum deposition parameters were determined based on experimental results and comprehensive analysis. X-Ray diffraction (XRD) patterns and rocking curve revealed an epitaxial growth with a perfect c-axis orientation. The YSZ thin films grown on silicon substrate have smooth surface, providing a base on which ECO and YBCO thin film can be grown epitaxially. To further improve the quality of YBCO films, an additional layer of ECO with very stable 214-T' crystal structure was inserted between YBCO and YSZ/Si. The influence of substrate temperature and oxygen gas pressure on the properties of ECO thin films grown on YSZ/Si were experimentally analyzed and the growth conditions were optimized. Finally, the epitaxial YBCO thin films were grown on silicon substrate with double buffer layers of ECO/YSZ. The influences of substrate temperature, oxygen gas pressure and different buffer layers on the properties of YBCO thin films were studied. It was found that the crystal structure, surface roughness and superconductivity of YBCO films could be significantly improved by adding such a double buffer of ECO/YSZ. The quality of the YBCO thin films has been significantly enhanced when compared with that grown on Si with a single YSZ buffer layer and with double buffer layers of Nd CuO (NCO)/YSZ. Such highly 2 4 epitaxial thin films of YBCO grown on silicon should be of great interest for various applications including high-frequency elements, millimeter-wave receivers, and superconducting quantum interference devices. DOI: 10.5353/th_b3637488 Subjects: Thin films Silicon Epitaxy
Epitaxial Oxide Thin Films II: Volume 401
Author: James S. Speck
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 588
Book Description
Our understanding and control of epitaxial oxide heterostructures has progressed along multiple frontiers including magnetic, dielectric, ferroelectric, and superconducting oxide materials. This has resulted in both independent rediscovery and the successful borrowing of ideas from ceramic science, solid-state physics, and semiconductor epitaxy. A new field of materials science has emerged which aims at the use of the intrinsic properties of various oxide materials in single-crystal thin-film form. Exploiting the potential of these materials, however, will only be possible if many fundamental and engineering questions can be answered. This book represents continued progress toward fulfilling that promise. Technical information on epitaxial oxide thin films from industry, academia and government laboratories is presented. Topics include: dielectrics; ferroelectrics; optics; superconductors; magnetics; magnetoresistance.
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 588
Book Description
Our understanding and control of epitaxial oxide heterostructures has progressed along multiple frontiers including magnetic, dielectric, ferroelectric, and superconducting oxide materials. This has resulted in both independent rediscovery and the successful borrowing of ideas from ceramic science, solid-state physics, and semiconductor epitaxy. A new field of materials science has emerged which aims at the use of the intrinsic properties of various oxide materials in single-crystal thin-film form. Exploiting the potential of these materials, however, will only be possible if many fundamental and engineering questions can be answered. This book represents continued progress toward fulfilling that promise. Technical information on epitaxial oxide thin films from industry, academia and government laboratories is presented. Topics include: dielectrics; ferroelectrics; optics; superconductors; magnetics; magnetoresistance.
Electrical Transport Properties of Epitaxial and Granular Oriented YBa2Cu3O--[̲delta] Thin Films
Author: Edwin C. Jones
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 394
Book Description
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 394
Book Description
Morphological Organization In Epitaxial Growth And Removal
Author: Max G Lagally
Publisher: World Scientific
ISBN: 9814496162
Category : Science
Languages : en
Pages : 508
Book Description
This book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories — the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field.
Publisher: World Scientific
ISBN: 9814496162
Category : Science
Languages : en
Pages : 508
Book Description
This book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories — the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field.
Epitaxial Oxide Thin Films and Heterostructures: Volume 341
Author: David K. Fork
Publisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 432
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 432
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Unlocking Control
Author: Mackil
Publisher: Tredition Gmbh
ISBN: 9783384283085
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
The relentless pursuit of miniaturization and enhanced functionalities in modern technology hinges on the creation of novel materials with precisely tailored properties. Epitaxial growth, a cornerstone thin-film deposition technique, offers unparalleled control over the atomic arrangement of materials, enabling the realization of these advancements. This article delves into the intricacies of epitaxial growth, exploring its core principles, various methods, and the potential it holds for revolutionizing diverse fields like electronics, photonics, and energy technologies. Epitaxy: Building Block by Block Epitaxy, derived from the Greek words "epi" (upon) and "taxis" (arrangement), refers to the growth of a crystalline layer (epitaxial layer) on a crystalline substrate, where the crystal structure and orientation of the deposited layer are dictated by the underlying substrate. This atomic-level control allows for the creation of thin films with specific properties unattainable in bulk materials.
Publisher: Tredition Gmbh
ISBN: 9783384283085
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
The relentless pursuit of miniaturization and enhanced functionalities in modern technology hinges on the creation of novel materials with precisely tailored properties. Epitaxial growth, a cornerstone thin-film deposition technique, offers unparalleled control over the atomic arrangement of materials, enabling the realization of these advancements. This article delves into the intricacies of epitaxial growth, exploring its core principles, various methods, and the potential it holds for revolutionizing diverse fields like electronics, photonics, and energy technologies. Epitaxy: Building Block by Block Epitaxy, derived from the Greek words "epi" (upon) and "taxis" (arrangement), refers to the growth of a crystalline layer (epitaxial layer) on a crystalline substrate, where the crystal structure and orientation of the deposited layer are dictated by the underlying substrate. This atomic-level control allows for the creation of thin films with specific properties unattainable in bulk materials.
Epitaxial Growth of Dy1Ba2Cu3O--ð Thin Films on LaAlO3(100) Substrates by Molecular Beam Deposition and Post-annealing
Author: Parthasarathy Seshadri
Publisher:
ISBN:
Category :
Languages : en
Pages : 196
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 196
Book Description
Epitaxial Oxide Thin Films and Heterostructures
Author:
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 514
Book Description
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 514
Book Description