CMOS Front-End Materials and Process Technology: Volume 765 PDF Download
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Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 336
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Book Description
In the future, because fundamental materials and process limits are being approached, continued transistor scaling will not be as straightforward. Future complementary metal-oxide semiconductor (MOS) transistors will require high-permittivity (high-k) gate dielectrics and metal gate electrodes, as well as low-resistance ultrashallow junctions, in order to meet the stringent specifications of the International Technology Roadmap for Semiconductors. Techniques to improve transconductance and drive current may also be required. Process integration issues must be solved, and reliability must be assured, before any new material or processing technique can be used in IC manufacture. A further complication is that the key challenges will differ according to application. This book reports research results from industry, government labs and academia covering a wide scope of front-end process issues for future CMOS technologies. Topics include: advanced materials and structures; high-k dielectrics; advanced gate stack materials; heterogeneous integration and strained Si technologies; ultrashallow junction technology; strained Si and source/drain technology; and laser annealing and silicide processes.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 336
Get Book Here
Book Description
In the future, because fundamental materials and process limits are being approached, continued transistor scaling will not be as straightforward. Future complementary metal-oxide semiconductor (MOS) transistors will require high-permittivity (high-k) gate dielectrics and metal gate electrodes, as well as low-resistance ultrashallow junctions, in order to meet the stringent specifications of the International Technology Roadmap for Semiconductors. Techniques to improve transconductance and drive current may also be required. Process integration issues must be solved, and reliability must be assured, before any new material or processing technique can be used in IC manufacture. A further complication is that the key challenges will differ according to application. This book reports research results from industry, government labs and academia covering a wide scope of front-end process issues for future CMOS technologies. Topics include: advanced materials and structures; high-k dielectrics; advanced gate stack materials; heterogeneous integration and strained Si technologies; ultrashallow junction technology; strained Si and source/drain technology; and laser annealing and silicide processes.
Author: David Louis Harame
Publisher: The Electrochemical Society
ISBN: 9781566774208
Category : Science
Languages : en
Pages : 1242
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Book Description
Author: Tibor Grasser
Publisher: Springer Science & Business Media
ISBN: 3211728600
Category : Computers
Languages : en
Pages : 472
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Book Description
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
Author: Materials Research Society. Fall Meeting
Publisher:
ISBN:
Category : Detectors
Languages : en
Pages : 552
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Book Description
Author: Michel Houssa
Publisher: CRC Press
ISBN: 1000687244
Category : Science
Languages : en
Pages : 500
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Book Description
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Author: Hock Min Ng
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 872
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Daniel J. Friedman
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 424
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: C. R. Abernathy
Publisher:
ISBN:
Category : Dielectric devices
Languages : en
Pages : 432
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Book Description
Author: Andrew G. Norman
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 344
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Materials Research Society. Fall Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 442
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Book Description
Papers from a December 2003 symposium review and discuss the science and technology of nanostructured materials and nanocomposites, with special emphasis placed on the relationships between their fabrication, structure, strength, and ductility. Major themes are nanoscience and nanoengineering of bulk and composite materials, thick coatings, and thin films with enhanced mechanical properties for structural and functional applications. The book will be of interest to researchers and graduate students in nanostructured materials science, and for engineers involved in the production and processing of nanocrystalline materials and nanocomposites for structural and functional applications. Annotation : 2004 Book News, Inc., Portland, OR (booknews.com).
