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Author: Jorge Ramírez-Ortiz
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659199820
Category :
Languages : en
Pages : 96
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Book Description
Chemical vapor deposition (CVD) is a very versatile process widely used in the production of thin solid films and surface coating. It is also used to produce powders, fibers and monolithic components. In addition, the majority of chemical elements in the periodic table has been deposited, as well as compounds such as carbides, nitrides, oxides, intermetallic and many others. Chemical vapor deposition has been a critical technology in silicon microelectronics processes, fabrication of thin films of metals, semiconductors, and insulators. With increasing packing density in microelectronic devices, copper is used as an interconnecting metal due to its superior electrical conductivity and excellent resistance against electromigration. One of the advantages of chemcial vapor deposition is that selective deposition onto one surface, often defined as the growth surface, in the presence of another surface, often defined as non-growth surface is possible. The high optical absorption coefficient and low cost of production of Cu2O thin films have they made good candidates for electrochromic devices, solar cells and oxygen sensors.
Author: Jorge Ramírez-Ortiz
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659199820
Category :
Languages : en
Pages : 96
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Book Description
Chemical vapor deposition (CVD) is a very versatile process widely used in the production of thin solid films and surface coating. It is also used to produce powders, fibers and monolithic components. In addition, the majority of chemical elements in the periodic table has been deposited, as well as compounds such as carbides, nitrides, oxides, intermetallic and many others. Chemical vapor deposition has been a critical technology in silicon microelectronics processes, fabrication of thin films of metals, semiconductors, and insulators. With increasing packing density in microelectronic devices, copper is used as an interconnecting metal due to its superior electrical conductivity and excellent resistance against electromigration. One of the advantages of chemcial vapor deposition is that selective deposition onto one surface, often defined as the growth surface, in the presence of another surface, often defined as non-growth surface is possible. The high optical absorption coefficient and low cost of production of Cu2O thin films have they made good candidates for electrochromic devices, solar cells and oxygen sensors.
Author: Yu-Neng Chang
Publisher:
ISBN:
Category :
Languages : en
Pages : 290
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Book Description
Author: Patrick Michael Jeffries
Publisher:
ISBN:
Category :
Languages : en
Pages : 294
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Book Description
Metal-organic chemical vapor deposition (MOCVD) from the tetrameric precursor copper(I) tert-butoxide, (Cu(O-t-Bu)) $\sb4$, results in the deposition of pure copper(I) oxide whiskers at 510 K and of copper metal with $\sim$2% oxygen contamination at 670 K. Quantitative analyses of the gaseous byproducts generated during the deposition, electron energy loss spectroscopy, and temperature programmed desorption experiments indicate that copper(I) oxide is formed by an elimination mechanism and copper metal is formed by deoxygenation of an initially deposited copper(I) oxide phase. New volatile monomeric Cu$\sp{\rm II}$ alkoxides have been synthesized with the general formula Cu(OR)$\sb2$L, where OR is OCH(CF$\sb3)\sb2$ or OC(CH$\sb3$)(CF$\sb3)\sb2$ and L is a bidentate amine. These compounds were prepared by the reaction of Cu(OMe)$\sb2$ with HOR and the amine in diethyl ether. The degree of distortion from square planar geometry for these compounds was measured by EPR spectroscopy, UV-vis spectroscopy, and X-ray crystallography. At 570 K, these compounds are MOCVD precursors for the deposition of pure copper metal. The surface chemistry of copper(I) and copper(II) $\beta$-diketonate complexes has been examined under ultrahigh vacuum conditions on copper single crystals by temperature programmed desorption studies, electron energy loss spectroscopy, infrared spectroscopy, and Auger spectroscopy. Above 200 K, the $\beta$-diketonate ligands migrate from the adsorbed copper compound to the copper surface. At $\sim$375 K, the ligands begin to fragment to give trifluoromethyl and ketenylidene surface species. Decarbonylation of the ketenylidene groups at $\sim$525 K leads to a carbon overlayer. Silver films have been prepared by MOCVD from (CF$\sb3$CF = C(CF$\sb3$)Ag) $\sb4$ at 550 K. Studies of the deposition mechanism reveal that (CF$\sb3$CF = C(CF$\sb3$)Ag) $\sb4$ initially deposits AgF by an elimination reaction and AgF then loses fluorine to produce silver metal. The crystal structure of (CF$\sb3$CF = C(CF$\sb3$)Ag) $\sb4$ was determined and shows that the compound is a tetramer that consists of a square plane of silver atoms in which each edge is bridged by a perfluorobutenyl ligand. The ruthenium alkyl complexes (Li(tmed)) $\sb2$(($\eta\sp4$-C$\sb 7$H$\sb8$)RuMe$\sb4$) and (Li(tmed)) $\sb2(\eta\sp5$-C$\sb8$H$\sb{11}$)RuMe$\sb4$) have also been prepared and characterized.
Author: Thomas Wächtler
Publisher: Thomas Waechtler
ISBN: 3941003178
Category :
Languages : en
Pages : 247
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Book Description
Author: Toivo T. Kodas
Publisher: John Wiley & Sons
ISBN: 3527615849
Category : Technology & Engineering
Languages : en
Pages : 562
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Book Description
High purity, thin metal coatings have a variety of important commercial applications, for example, in the microelectronics industry, as catalysts, as protective and decorative coatings as well as in gas-diffusion barriers. This book offers detailed, up- to-date coverage of the chemistry behind the vapor deposition of different metals from organometallic precursors. In nine chapters, the CVD of metals including aluminum, tungsten, gold, silver, platinum, palladium, nickel, as well as copper from copper(I) and copper(II) compounds is covered. The synthesis and properties of the precursors, the growth process, morphology, quality and adhesion of the resulting films as well as laser- assisted, ion- assisted and plasma-assisted methods are discussed. Present applications and prospects for future developments are summarized. With ca. 1000 references and a glossary, this book is a unique source of in-depth information. It is indispensable for chemists, physicists, engineers and materials scientists working with metal- coating processes and technologies. From Reviews: 'I highly recommend this book to anyone interested in learning more about the chemistry of metal CVD.' J. Am Chem. Soc.
Author: Vitaly Gurylev
Publisher: Springer Nature
ISBN: 3030819116
Category : Technology & Engineering
Languages : en
Pages : 388
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Book Description
This book helps readers comprehend the principles and fundamentals of defect engineering toward realization of an efficient photocatalyst. The volume consists of two parts, each of which addresses a particulate type of defects. The first, larger section provides a comprehensive and rigorous treatment of the behaviour and nature of intrinsic defects. The author describes how their controlled introduction and consequent manipulation over concentration, distribution, nature and diffusion is one of the most effective and practical methodologies to modify the properties and characteristics of target photocatalytic materials. The second part of the book explains the formation of extrinsic defects in the form of metallic and non-metallic dopants and gives a detailed description of their characteristics as this approach is also often used to fabricate an efficient photocatalyst. Filling the gap in knowledge on the correlation between introduction of defects in various semiconducting materials and their photocatalytic performance, the book is ideal for graduate students, academics and researchers interested in photocatalysts, defect engineering, clean energy, hydrogen production, nanoscale advanced functional materials, CO2 deactivation, and semiconductor engineering.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 312
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Book Description
The chemical vapor deposition of superconducting ytterbium barium copper oxide thin films onto continuous lengths of ceramic fiber tows has been investigated. This project couples two areas of current interest in the materials field continuous fiber coating and the deposition of one of the unique high temperature superconducting oxides. The YBa2Cu3Ox material has zero resistance at temperatures above 77 K (the boiling point of nitrogen), and the film form has been shown to have high critical current densities. By coating ceramic fiber tows, a strong, flexible superconducting material in the form of wire can be developed and used for several applications, including coils for magnets and transmission lines. Over 900 deposition runs were completed using a horizontal CVD furnace and over 150 continuous fiber coating experiments were completed. The deposition was performed on fiber tows, flat samples, and flexible tapes; the continuous substrates were moved and held stationary in the furnace.
Author: Tahir Muhmood
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659151163
Category :
Languages : en
Pages : 84
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Book Description
Different kinds of methods such as Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), Sol-Gel Deposition (SGD), Thermal Spray Deposition (TSD), Jet Vapor Deposition (JVD), Triboadhesion Deposition (TAD), & Electroless Deposition (ELD) were used for the coating of metal oxides on glass substrates but it was found that Electroless Deposition is the most effective and common method for deposition of metal oxides on glass substrate due to its unique characteristics. Effectiveness of deposition was studied by the stability of metal oxides (Nickel & Copper Oxides) layer on glass substrate. Stability was measured by comparing the duration of crack formation at different temperatures and by changing the composition of metallic & reducing agents solutions, on glass substrate. Cracks formation was noted and measure with the help of High Efficient Microscope. Metallic & Reducing agent solutions properties were also noted by preparing them with different methods. Reducing agents that commonly used in deposition are hydrogen compounds, in which hydrogen atom is linked to phosphorus, nitrogen, and carbon i.e, Sodium Hypophosphite, Dimethylamine-borane, Hydrazine and Formaldehyde
Author: D. Temple
Publisher:
ISBN:
Category : Organocopper compounds
Languages : en
Pages : 12
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Book Description
Author: Hasung Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 178
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Book Description
