Characterization of Vertical Interconnects in 3-D Monolithic Microwave Integrated Circuits (3-D MMIC) PDF Download
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Languages : en
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In this research, a unique fabrication technology to build high-aspect-ratio via interconnects in 3D MMIC multilayer integration was developed from a combination of microelectronic and traditional MEMS microfabrication technologies. Based on these techniques, a set of test structures have been successfully fabricated to facilitate the vertical interconnect characterization. Fully cured polyimide thin films possess favorable electric and mechanical properties for the 3D MMIC applications. Using quarter wavelength T-junction resonator structure, polyimide was characterized for its microwave properties. High-frequency characterization of polyimide thin films was obtained in a wide frequency range. Experimental results have shown the feasibility of this method. In order to correctly evaluate the conductor loss in thin planar transmission lines, a modified conductor loss model was derived from conventional Wheeler's incremental inductance rule to account for the field penetration as the physical strip thickness approaches the skin depth or even smaller. The closed-form formulas or simplified equations have been developed for microstrip and stripline with wide strip cases, and for general coplanar waveguide including SCPWG line. Meanwhile, experimental results verified the validity of the modified conductor loss model in evaluating the losses in thin transmission lines. It has been shown that as the conductor thickness becomes approximately greater than four times of the skin depth, both conventional Wheeler's rule and its modified model agree with each other very well on the conductor loss estimation. Experimental results have revealed that at RF frequency, e.g. X band (8-12 GHz), the vertical interconnection discontinuities may contribute significantly to the insertion loss and the phase change. With the advanced conductor loss models for evaluating the characteristics in the test structures, lumped-element equivalent circuit models can be derived from the via module measurement results. These models are of great practical importance in a complex circuit design.
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Languages : en
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Book Description
In this research, a unique fabrication technology to build high-aspect-ratio via interconnects in 3D MMIC multilayer integration was developed from a combination of microelectronic and traditional MEMS microfabrication technologies. Based on these techniques, a set of test structures have been successfully fabricated to facilitate the vertical interconnect characterization. Fully cured polyimide thin films possess favorable electric and mechanical properties for the 3D MMIC applications. Using quarter wavelength T-junction resonator structure, polyimide was characterized for its microwave properties. High-frequency characterization of polyimide thin films was obtained in a wide frequency range. Experimental results have shown the feasibility of this method. In order to correctly evaluate the conductor loss in thin planar transmission lines, a modified conductor loss model was derived from conventional Wheeler's incremental inductance rule to account for the field penetration as the physical strip thickness approaches the skin depth or even smaller. The closed-form formulas or simplified equations have been developed for microstrip and stripline with wide strip cases, and for general coplanar waveguide including SCPWG line. Meanwhile, experimental results verified the validity of the modified conductor loss model in evaluating the losses in thin transmission lines. It has been shown that as the conductor thickness becomes approximately greater than four times of the skin depth, both conventional Wheeler's rule and its modified model agree with each other very well on the conductor loss estimation. Experimental results have revealed that at RF frequency, e.g. X band (8-12 GHz), the vertical interconnection discontinuities may contribute significantly to the insertion loss and the phase change. With the advanced conductor loss models for evaluating the characteristics in the test structures, lumped-element equivalent circuit models can be derived from the via module measurement results. These models are of great practical importance in a complex circuit design.
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Category : Dissertations, Academic
Languages : en
Pages : 778
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Author: Rajappa Tadepalli
Publisher:
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Category :
Languages : en
Pages : 108
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Category :
Languages : en
Pages : 12
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Author: Marzuki, Arjuna
Publisher: IGI Global
ISBN: 1605668877
Category : Technology & Engineering
Languages : en
Pages : 380
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Book Description
Monolithic Microwave Integrated Circuit (MMIC) is an electronic device that is widely used in all high frequency wireless systems. In developing MMIC as a product, understanding analysis and design techniques, modeling, measurement methodology, and current trends are essential.Advances in Monolithic Microwave Integrated Circuits for Wireless Systems: Modeling and Design Technologies is a central source of knowledge on MMIC development, containing research on theory, design, and practical approaches to integrated circuit devices. This book is of interest to researchers in industry and academia working in the areas of circuit design, integrated circuits, and RF and microwave, as well as anyone with an interest in monolithic wireless device development.
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ISBN:
Category : Electrical engineering
Languages : en
Pages : 1860
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Author: Ehrenfried Zschech
Publisher: American Institute of Physics
ISBN: 9780735409385
Category : Science
Languages : en
Pages : 0
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Scientist and engineers as well as graduate students in the fields of This conference will be of interest to anyone involved in Physics, Electrical Engineering, Materials Science and Engineering, Reliability and Quality Management, both in industry and academia. One current challenge to micro- and nanoelectronics is the understanding of stress-related phenomena in 3D IC integration. Stresses arising in 3D TSV interconnects and in the surrounding materials due to thermal mismatch, microstructure changes or process integration can lead to performance reduction, reliability-limiting degradation and failure of microelectronic products. Understanding stress-related phenomena in new materials used for 3D integration and packaging, particularly using through silicon vias and microbumps, is critical for future microelectronic products. Management of mechanical stress is one of the key enablers for the successful implementation of 3D-integrated circuits using through silicon vias (TSVs). The potential stress-related impact of the 3D integration process on the device characteristics must be understood and shared, and designers need a solution for managing stress. The Proceedings summarize new research results and advances in basic understanding of stress-induced phenomena in 3D IC integration. Modelling and simulation capabilities as well as materials characterization are demonstrated to evaluate the effect of stress on product performance.
Author: Luke Maresca
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 90
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"Conventional three-dimensional integrated circuits (3D ICs) stack multiple dies vertically for higher integration density, shorter wirelength, smaller footprint, faster speed and lower power consumption. Due to the large through-silicon-via (TSV) sizes, 3D design partitioning is typically done at the architecture-level With the emerging monolithic 3D technology, TSVs can be made much smaller, which enables potential block-level partitioning. However, it is still unclear how much benefit can be obtained by block-level partitioning, which is affected by the number of tiers and the sizes of TSVs. In this thesis, an 8-bit ripple carry adder was used as an example to explore the impact of TSV size and tier number on various tradeoffs between power, delay, footprint and noise. With TSMC 0.18um technology, the study indicates that when the TSV size is below 100nm, it can be beneficial to perform block-level partitioning for smaller footprint with minimum power, delay and noise overhead"--Abstract, leaf iii.
Author: Abdul Hamid Bin Yousuf
Publisher:
ISBN:
Category : Computer-aided design
Languages : en
Pages : 139
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To ensure maximum circuit reliability it is very important to estimate the circuit performance and signal integrity in the circuit design phase. A full phase simulation for performance estimation of a large-scale circuit not only require a massive computational resource but also need a lot of time to produce acceptable results. The estimation of performance/signal integrity of sub-nanometer circuits mostly depends on the interconnect capacitance. So, an accurate model for interconnect capacitance can be used in the circuit CAD (computer-aided design) tools for circuit performance estimation before circuit fabrication which reduces the computational resource requirement as well as the time constraints. We propose a new capacitance models for interconnect lines in multilevel interconnect structures by geometrically modeling the electrical flux lines of the interconnect lines. Closed-form equations have been derived analytically for ground and coupling capacitance. First, the capacitance model for a single line is developed, and then the new model is used to derive expressions for the capacitance of a line surrounded by neighboring lines in the same and the adjacent layers above and below. These expressions are simple, and the calculated results are within 10% of Ansys Q3D extracted values. Through silicon via (TSV) is one of the key components of the emerging 3D ICs. However, increasing number of TSVs in smaller silicon area leads to some severe negative impacts on the performance of the 3D IC. Growing signal integrity issues in TSVs is one of the major challenges of 3D integration. In this paper, different materials for the cores of the vias and the interposers are investigated to find the best possible combination that can reduce crosstalk and other losses like return loss and insertion loss in the TSVs. We have explored glass and silicon as interposer materials. The simulation results indicate that glass is the best option as interposer material although silicon interposer has some distinct advantages. For via cores three materials - copper (Cu), tungsten (W) and Cu-W bimetal are considered. From the analysis it can concluded that W would be better for high frequency applications due to lower transmission coefficient. Cu offers higher conductivity, but it has larger thermal expansion coefficient mismatch with silicon. The performance of Cu-W bimetal via would be in between Cu and W. However, W has a thermal expansion coefficient close to silicon. Therefore, bimetal Cu-W based TSV with W as the outer layer would be a suitable option for high frequency 3D IC. Here, we performed the analysis in terms of return loss, transmission coefficient and crosstalk in the vias. Signal speed in current digital systems depends mainly on the delay of interconnects. To overcome this delay problem and keep up with Moore’s law, 3D integrated circuit (vertical integration of multiple dies) with through-silicon via (TSV) has been introduced to ensure much smaller interconnect lengths, and lower delay and power consumption compared to conventional 2D IC technology. Like 2D circuit, the estimation of 3D circuit performance depends on different electrical parameters (capacitance, resistance, inductance) of the TSV. So, accurate modeling of the electrical parameters of the TSV is essential for the design and analysis of 3D ICs. We propose a set of new models to estimate the capacitance, resistance, and inductance of a Cu-filled TSV. The proposed analytical models are derived from the physical shape and the size of the TSV. The modeling approach is comprehensive and includes both the cylindrical and tapered TSVs as well as the bumps. On-chip integration of inductors has always been very challenging. However, for sub- 14nm on-chip applications, large area overhead imposed by the on-chip capacitors and inductors has become a more severe concern. To overcome this issue and ensure power integrity, a novel 3D Through-Silicon-Via (TSV) based inductor design is presented. The proposed TSV based inductor has the potential to achieve both high density and high performance. A new design of a Voltage Controlled Oscillator (VCO) utilizing the TSV based inductor is also presented. The implementation of the VCO is intended to study the feasibility, performance, and real-world application of the proposed TSV based inductor.
Author:
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ISBN:
Category : Chemistry
Languages : en
Pages : 2668
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