Characterization of Some Technically Important Defects in Semiconductors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Characterization of Some Technically Important Defects in Semiconductors PDF full book. Access full book title Characterization of Some Technically Important Defects in Semiconductors by Erik Meijer. Download full books in PDF and EPUB format.
Author: Erik Meijer
Publisher:
ISBN:
Category :
Languages : en
Pages : 9
Get Book Here
Book Description
Author: Erik Meijer
Publisher:
ISBN:
Category :
Languages : en
Pages : 9
Get Book Here
Book Description
Author: Erik Meijer
Publisher:
ISBN:
Category :
Languages : en
Pages : 140
Get Book Here
Book Description
Author: D. B. Holt
Publisher: Cambridge University Press
ISBN: 9781107424142
Category : Science
Languages : en
Pages : 0
Get Book Here
Book Description
Covering topics that are especially important in electronic device development, this book surveys the properties, effects, roles and characterization of structurally extended defects in semiconductors. The basic properties of extended defects are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Author: Filip Tuomisto
Publisher:
ISBN: 9781523127436
Category : Semiconductors
Languages : en
Pages : 578
Get Book Here
Book Description
Author: National Aeronautics and Space Adm Nasa
Publisher:
ISBN: 9781729336571
Category : Science
Languages : en
Pages : 60
Get Book Here
Book Description
The study of point defects in semiconductors has a long and honorable history. In particular, the detailed understanding of shallow defects in common semiconductors traces back to the classic work of Kohn and Luttinger. However, the study of defects in narrow gap semiconductors represents a much less clear story. Here, both shallow defects (caused by long range potentials) and deep defects (from short range potentials) are far from being completely understood. In this study, all results are calculational and our focus is on the chemical trend of deep levels in narrow gap semiconductors. We study substitutional (including antisite), interstitial and ideal vacancy defects. For substitutional and interstitial impurities, the efects of relaxation are included. For materials like Hg(1-x)Cd(x)Te, we study how the deep levels vary with x, of particular interest is what substitutional and interstitial atoms yield energy levels in the gap i.e. actually produce deep ionized levels. Also, since the main technique utilized is Green's functions, we include some summary of that method. Patterson, James D. Unspecified Center...
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
Get Book Here
Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: J. Chikawa
Publisher: Springer
ISBN: 9789400947665
Category : Science
Languages : en
Pages : 0
Get Book Here
Book Description
This volume contains nearly all of the papers presented at the Symposium on "Defects and Qualities of Semiconductors" which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project "Quality Developement of Semiconductors by Utilization of Crystal Defects" sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term "DEFECT ENGINEERING" was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.
Author: D. B. Holt
Publisher:
ISBN: 9780511277511
Category : Technology & Engineering
Languages : en
Pages : 631
Get Book Here
Book Description
Author: J. Doneker
Publisher: Routledge
ISBN: 1351456466
Category : Science
Languages : en
Pages : 552
Get Book Here
Book Description
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 440
Get Book Here
Book Description
