Author: Priyanka Petluru
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Photodetectors operating in the mid-infrared wavelength range have traditionally been dominated by the HgCdTe (MCT) material system. However, there has been growing interest in other materials due to environmental concerns regarding the toxicity of both mercury and cadmium, as well as issues with the non-uniformity of MCT epitaxial growth and minimal MCT fabrication infrastructure, compared to that of traditional arsenic- and antimony-based III-V material systems. One such example is the type-II superlattice (T2SL), which has shown great potential due to its theoretically predicted advantages such as suppressed Auger recombination, as well as for its bandgap flexibility. Yet at longer wavelengths, superlattices show weaker absorption coefficients compared to bulk materials. One option to address this deficiency is to utilize optical engineering to overcome the decreased absorption of T2SLs at these wavelengths, leveraging phenomena such as plasmonic structures. Highly doped semiconductors can act as plasmonic materials in the mid-infrared, allowing for monolithic integration of these materials into optoelectronic device structures. In this work, several all-epitaxial structures are discussed, highlighting the capabilities of integrated highly doped semiconductor materials, as well as the potential of T2SLs as an absorber material, for next generation infrared photodetectors. The first example is an all-epitaxial dielectric-metal-dielectric structure capable of supporting long-range surface plasmon polaritons in the long-wave infrared, with type-II superlattices (T2SLs) utilized as the dielectric layers in this structure. Additionally, a thin long-wave infrared p-i-n detector designed for enhanced absorption at band-edge, utilizing a guided mode resonance, is investigated. Furthermore, a detector operating at 180K in the long-wave infrared, utilizing a resonant cavity, and configured for focal plane arrays, is demonstrated. The absorption peak for this detector can be spectrally tuned across the long wave infrared wavelength range by changing the total cavity thickness, and experimental results show an external quantum efficiency of 25% on resonance at 10.8μm. Another possible alternative to the HgCdTe material system is a quaternary alloy such as InAsSbBi, which also offers large design flexibility without a weaker absorption coefficient. The potential of InAsSbBi as an absorber material for infrared detectors is also investigated, through photoluminescence and minority carrier lifetime measurements. Finally, future work and potential new directions for these projects are discussed. In particular, possible methods to improve the optical and electrical characteristics of the resonant cavity enhanced detectors are included
Author: Siew Li Tan
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
III-V semiconductor alloys possess interesting electronic properties that can be engineered and optimised for highly-efficient light absorption and emission in optoelectronic devices. Although GaAs is by far the most mature and cost-effective III-V semiconductor material, its use as a starting material for optoelectronic devices is limited by the feasibility of growing high-quality single crystals with different lattice parameters on GaAs substrates. In this thesis, p-i-n diodes comprised of two types of GaAs-based alloys with bandgap energies in the near and short-wave infrared (SWIR) range for photo-detection applications, are investigated experimentally. All of the samples are grown by molecular beam epitaxy (MBE) technique. The main focus of this thesis is on the first type of alloy, GaInNAs, in which the addition of a small amount of substitutional N atoms into GaAs results in an anomalously large energy band gap reduction, while the addition of In compensates the tensile strain introduced by the small N atoms to achieve lattice matching to GaAs. The second alloy, GaInAsSb, is conventionally grown on GaSb substrate, but epitaxial growth on GaAs is possible via a special growth mode, which enables a very thin GaSb epilayer to be grown directly on GaAs with minimum or absence of threading dislocations. As both of the material systems investigated in this work are known for various growth-related problems, attempts were made, whenever possible, to infer the electronic properties of the devices irrespective of the growth process. Growth-related defects in the dilute nitride GaInNAs alloy system are known to affect optoelectronic device performance with issues such as short minority-carrier diffusion lengths and high background doping densities. Despite these difficulties, interest into the dilute nitride alloys has continued to grow for over two decades, as evident by a recent breakthrough in high-efficiency, multi-junction solar cells utiliSing 1 eV GaInNAs absorber layers. Hence the thesis has to first deal with the effects of growth-related defects on the optoelectronic performance of GaInNAs devices. Investigation of the photovoltaic characteristics of GaInNAs diodes are useful in revealing issues affecting the efficiency and detectivity of photodetectors and solar cells, such as those associated with dark currents, quantum effiCiency, minority carrier diffusion lengths, and lifetime. In addition, the effect of Sb, which is commonly used as a surfactant during the growth process of Ga(In)NAs, is investigated.
Author: Peter Capper
Publisher: Springer Science & Business Media
ISBN: 1461516072
Category : Technology & Engineering
Languages : en
Pages : 500
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Book Description
An up-to-date view of the various detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers and those already working in the IR industry. It provides both an introductory text and a valuable overview of the entire field.
Author:
Publisher: Elsevier
ISBN: 0128133589
Category : Technology & Engineering
Languages : en
Pages : 608
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Book Description
Colloidal Metal Oxide Nanoparticles: Synthesis, Characterization and Applications is a one-stop reference for anyone with an interest in the fundamentals, synthesis and applications of this interesting materials system. The book presents a simple, effective and detailed discussion on colloidal metal oxide nanoparticles. It begins with a general introduction of colloidal metal oxide nanoparticles, then delves into the most relevant synthesis pathways, stabilization procedures, and synthesis and characterization techniques. Final sections discuss promising applications, including bioimaging, biosensing, diagnostic, and energy applications—i.e., solar cells, supercapacitors and environment applications—i.e., the treatment of contaminated soil, water purification and waste remediation. Provides the most comprehensive resource on the topic, from fundamentals, to synthesis and characterization techniques Presents key applications, including biomedical, energy, electronic and environmental Discusses the most relevant techniques for synthesis, patterning and characterization
Author: Bruce D. McCombe
Publisher:
ISBN:
Category :
Languages : en
Pages : 109
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Book Description
A program for the characterization of bulk and epitaxial single crystals of III-V compounds is described. The program includes electrical, chemical, structural and topographic characterization as well as device fabrication and evaluation, and is carried out on a co-ordinated basis by three Navy laboratories: The Naval Research Laboratory, the Naval Surface Weapons Center, and the Naval Ocean Systems Center. The primary goals of the effort continue to be: (1) To provide rapid and interactive feedback of routine characterization information to the materials growth effort, and (2) to develop new, innovative methods for materials characterization. Characterization techniques described include routine Hall effect measurements, photoconductivity, contactless microwave magnetoconductivity, contactless infrared optical measurements, photoluminescence of bulk and interface states, and fabrication and test of Schottky barrier field effect transistors. Results achieved with these techniques on GaAs and InP materials produced in-house and provided by commercial laboratories are described. (Author).
Author: Antoni Rogalski
Publisher:
ISBN: 9781032338668
Category :
Languages : en
Pages : 0
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Book Description
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding.
Author: Babak Anasori
Publisher: Springer Nature
ISBN: 3030190269
Category : Technology & Engineering
Languages : en
Pages : 534
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Book Description
This book describes the rapidly expanding field of two-dimensional (2D) transition metal carbides and nitrides (MXenes). It covers fundamental knowledge on synthesis, structure, and properties of these new materials, and a description of their processing, scale-up and emerging applications. The ways in which the quickly expanding family of MXenes can outperform other novel nanomaterials in a variety of applications, spanning from energy storage and conversion to electronics; from water science to transportation; and in defense and medical applications, are discussed in detail.
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
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Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author: Chaudhery Mustansar Hussain
Publisher: Elsevier
ISBN: 012813352X
Category : Science
Languages : en
Pages : 1143
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Book Description
Handbook of Nanomaterials for Industrial Applications explores the use of novel nanomaterials in the industrial arena. The book covers nanomaterials and the techniques that can play vital roles in many industrial procedures, such as increasing sensitivity, magnifying precision and improving production limits. In addition, the book stresses that these approaches tend to provide green, sustainable solutions for industrial developments. Finally, the legal, economical and toxicity aspects of nanomaterials are covered in detail, making this is a comprehensive, important resource for anyone wanting to learn more about how nanomaterials are changing the way we create products in modern industry. Demonstrates how cutting-edge developments in nanomaterials translate into real-world innovations in a range of industry sectors Explores how using nanomaterials can help engineers to create innovative consumer products Discusses the legal, economical and toxicity issues arising from the industrial applications of nanomaterials
Author: Antoni Rogalski
Publisher: CRC Press
ISBN: 1000204936
Category : Science
Languages : en
Pages : 265
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Book Description
2D Materials for Infrared and Terahertz Detectors provides an overview of the performance of emerging detector materials, while also offering, for the first time, a comparison with traditional materials used in the fabrication of infrared and terahertz detectors. Since the discovery of graphene, its applications to electronic and optoelectronic devices have been intensively researched. The extraordinary electronic and optical properties allow graphene and other 2D materials to be promising candidates for infrared (IR) and terahertz (THz) photodetectors, and yet it appears that the development of new detectors using these materials is still secondary to those using traditional materials. This book explores this phenomenon, as well as the advantages and disadvantages of using 2D materials. Special attention is directed toward the identification of the most-effective hybrid 2D materials in infrared and terahertz detectors, as well as future trends. Written by one of the world’s leading researchers in the field of IR optoelectronics, this book will be a must-read for researchers and graduate students in photodetectors and related fields. Features • Offers a comprehensive overview of the different types of 2D materials used in fabrication of IR and THz detectors, and includes their advantages/disadvantages • The first book to compare new detectors to a wide family of common, commercially available detectors that use traditional materials.
