Characterization of Cylindrical and Conical Like Zinc Oxide Light Emitting Diode Structures PDF Download
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Author: Nik Nur Atiqah Saidi
Publisher:
ISBN:
Category :
Languages : en
Pages : 182
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Book Description
The main purpose of this work is to design different structural dimensions of LED chip by using ZnO. Instead of using a typical rectangular or square structure, cylindrical and conical like structures are used to fulfill the main objective. Besides that, there are also several specific objectives in order to improve the quality of studies and to ensure this research is parallel with the theories of LED. The objectives are to investigate the effect of doping layer thickness in cylindrical and conical like structures of LED chip; to examine the effect of bias voltage supply in cylindrical and conical like structures of LED chip; to explore the characteristic of ZnO LED by analyzing the I-V characteristic curves, two-dimensional (2D) emission rate, relation of total emission rate and current, and internal quantum efficiency (IQE) with current variation; to evaluate the drift and diffusion process of carrier flows in cylindrical and conical like structures.
Author: Nik Nur Atiqah Saidi
Publisher:
ISBN:
Category :
Languages : en
Pages : 182
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Book Description
The main purpose of this work is to design different structural dimensions of LED chip by using ZnO. Instead of using a typical rectangular or square structure, cylindrical and conical like structures are used to fulfill the main objective. Besides that, there are also several specific objectives in order to improve the quality of studies and to ensure this research is parallel with the theories of LED. The objectives are to investigate the effect of doping layer thickness in cylindrical and conical like structures of LED chip; to examine the effect of bias voltage supply in cylindrical and conical like structures of LED chip; to explore the characteristic of ZnO LED by analyzing the I-V characteristic curves, two-dimensional (2D) emission rate, relation of total emission rate and current, and internal quantum efficiency (IQE) with current variation; to evaluate the drift and diffusion process of carrier flows in cylindrical and conical like structures.
Author: Hyun-Sik Kim
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
ZnO-based light emitting diodes were fabricated on c-plane sapphire using ZnO:P/ Zn[subscript 0.9]Mg[subscript 0.1]O/ZnO/ Zn[subscript 0.9]Mg[subscript 0.1]O/ZnO:Ga p-i-n heterostructures. The p-i-n heterojunction diodes are rectifying and show light emission under forward bias. The electroluminescence spectra shows deep level emission at low bias, but near band edge ultraviolet emission at high voltage bias. A decrease in leakage currents in as-fabricated structures was achieved via low temperature oxygen annealing.
Author: Jau-Jiun Chen
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
ABSTRACT: ZnO-based materials have great potential for UV light-emitting diodes (LEDs) and transparent electronics because of the high exciton binding energy of ZnO relative to GaN. Fabricating an effective LED from novel materials requires a detailed knowledge of the band offset, etch, and contact behavior of the material. This work determined the valence and conduction band offsets for Zn095Cd0.05O/ZnO (0.17 eV, 0.30 eV) and related materials using x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). These methods were also used to study carrier confinement in two promising passivation materials: MgO/GaN (1.06 eV, 3.30 eV) and Sc2O3/GaN (0.42 eV, 2.14 eV). To form an LED mesa, it is critical to understand the etch rate of ZnO-based materials. In this work, HCl and H3PO4 were used as etchants for ZnCdO/ZnO (~50 nm·1-min−1 HCl/~15 nm·min−1 H3PO4) and ZnMgO/ZnO (300-1100 nm·min−1 HCl/120-300 nm·min−1H3PO4). A high degree of selectivity was sought using these etchants on ZnCdO/ZnO (~50 HCl/~15 H3PO4) and ZnMgO/ZnO (~300-400 HCl/~25 H3PO4). Alloyed Ti/Au and Ti/Al/Pt/Au contacts were deposited on n-type Zn095Cd0.05O, with excellent contact resistivities of and 2.3x10−4 and 1.6x10−4 ohm-cm2, respectively. Alloyed Ti/Au and indium-tin-oxide (ITO)/Ti/Au metallization of n-type Al-doped ZnO was used to create ohmic metal contacts with excellent contact resistivities of 6x10−8 and 4.6x10−6ohm-cm2. Using SiLENSe Software, the optimum active layer thickness was found to be 200 nm.
Author: Chi-man Luk
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 190
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Book Description
With the optimized growth parameters, n-ZnO:Al/i-ZnO/p-GaN:Mg heterojunction LEDs were fabricated. The electrical characteristics of the diodes were investigated. The ultraviolet (UV) electroluminescence (EL) from the device was detected at room temperature. The emission is attributed to the electron-hole radiative recombination in the ZnO region and is explained in detail by an energy band diagram. ZnO nanostructures are expected to have improved optical and electronic properties because of the quantum confinement effect. Using low-temperature aqueous chemical method, the ZnO nanorods arrays were grown on the buffer layers prepared at various temperatures. The nanorods were grown along [0001] direction. The PL measurement indicated that the emission spectrum covered a UV peak at ~ 380 nm and a broad visible band at ~ 560 nm. The PL spectra of the ZnO nanorods are independent on the growth temperature of the buffer layer. Moreover, the buffer-layer-thickness-dependent structural and optical properties were studied. The as-grown ZnO nanorods were utilized to fabricate hybrid LED with an organic semiconductor, N, N'-diphenyl-N, N'-bis(1-naphthyl)-1, 1'-biphenyl-4, 4'-diamine (?NPD), which is one of the most widely used hole transport and blue-emitting organic semiconductors. Current-voltage characteristics of the devices exhibited nonlinear rectifying behaviour. The EL spectra of the hybrid LEDs reveal a blue and broad yellowish green emission originated from the?NPD layer and the defect levels of the ZnO respectively. The origin of the emission bands from the hybrid structures will be examined.
Author: Yu-Lin Wang
Publisher:
ISBN:
Category :
Languages : en
Pages :
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ABSTRACT: Hydrogen effects on the electrical and optical properties of p-i-n ZnO light emitting diodes (LEDs) were investigated. There were no diode characteristics or light emission observed from p-i-n ZnO LEDs unless the LEDs were annealed at 350 °C after fabrication. Annealed diodes showed band-edge electroluminescence at 385nm and a broad defect band with a peak at 930nm at room temperature. The effects of hydrogen plasma, moisture, water, and phosphoric acid solution on the annealed diode characteristics were investigated and significant degradation of electrical and optical properties were observed in all cases. The plasma-enhanced chemical vapor-deposited (PECVD) SiO2 and SiN[subscript x] passivation effects on p-i-n ZnO LEDs were also investigated.
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2692
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Book Description
Author: Serge Zhuiykov
Publisher: Woodhead Publishing
ISBN: 0081019203
Category : Technology & Engineering
Languages : en
Pages : 568
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Book Description
Nanostructured Semiconductors focuses on the development of semiconductor nanocrystals, their technologies and applications, including energy harvesting, solar cells, solid oxide fuel cells, and chemical sensors. Semiconductor oxides are used in electronics, optics, catalysts, sensors, and other functional devices. In their 2D form, the reduction in size confers exceptional properties, useful for creating faster electronics and more efficient catalysts. Since the first edition of the book, there has been significant progress in the development of new functional nanomaterials with unique and sometimes unpredictable quantum-confined properties within the class what it called two-dimensional (2D) semiconductors. These nanocrystals represent extremely thin nano-structures with thickness of just few nano-meters. Since that time, not only were 2D semiconductor oxides further developed, more importantly, 2D metal dichalcogenides, such as MoS2, MoSe2, WS2, WSe2 and others also progressed significantly in their development demonstrating their superior properties compared to their bulk and microstructural counterparts. The book has been expanded to include these advancements. The book begins with the structure and properties of semiconductor nanocrystals (chapter 1), addresses electronic device applications (chapter 2), discusses 2-Dimensional oxides and dichalcogenide semiconductors (chapters 3 through 5), and ends with energy, environment, and bio applications (chapters 6 through 8). Focuses on the development of semiconductor nanocrystals and their technologies and applications, including energy harvesting, solar cells, solid oxide fuel cells and chemical sensors Include other 2D materials, such as dichalcogenides to present a comprehensive resource on the latest advancements in nanostructured semiconductors Reviews the fundamental physics of conductivity and electron arrangement before proceeding to practical applications Contains a unique chapter dedicated to the new atomic layer deposition (ALD) technique which has the ability to develop 2D nanostructures with great precision
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 236
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Author: Adrian Kitai
Publisher: John Wiley & Sons
ISBN: 1444318349
Category : Science
Languages : en
Pages : 333
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Book Description
"The book will cover the two most important applications of semiconductor diodes - solar cells and LEDs - together with quantitative coverage of the physics of the PN junction at the senior undergraduate level. It will include: Review of semiconductor physics Introduction to PN diodesThe solar cell Physics of efficient conversion of sunlight into electrical energy Semiconductor solar cell materials and device physics Advanced solar cell materials and devices The light emitting diode Physics of efficient conversion of electrical energy into light Semiconductor light emitting diode materials and device physics Advanced light emitting diode materials and devices"--
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 898
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