Characterisation of Stripe Optical Waveguides Fabricated by Silicon Impurity Induced Disordering of GaAs/AlGaAs MQW Material PDF Download
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Author: A. C. Wismayer
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Languages : en
Pages :
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Author: A. C. Wismayer
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Category :
Languages : en
Pages :
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Author: A. C. Wismayer
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Category : Communication
Languages : en
Pages :
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Category : Dissertations, Academic
Languages : en
Pages : 860
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Author:
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Category : Dissertations, Academic
Languages : en
Pages : 1056
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Theses on any subject submitted by the academic libraries in the UK and Ireland.
Author: Tony Kai Tung Tang
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Category :
Languages : en
Pages : 238
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The routing capabilities of waveguides defined by Zn, SiO$sb2$, and In/SiO$sb2$ Impurity-Induced Layer Disordering (IILD) of a single GaAs quantum-well graded barrier laser structure are investigated using raised-cosine S-bend geometries. The 3-dB transition length for a 100 $mu$m offset S-bend waveguides fabricated using the Zn, SiO$sb2$, or In/SiO$sb2$ IILD process is less than 300 $mu$m for near single-mode guides. In addition, vacancy-induced layer disordering (VILD) of the native quantum-well region is investigated and is shown to increase the band gap to a point at which the material is low-loss for radiation generated by a laser made from the native material. The 3-dB length for these blue-shifted waveguides decreases to about 230 $mu$m due to reduced mode conversion. This VILD technique is also used to fabricate lasers with various blue-shifted emission wavelengths. Secondary Ion Mass Spectroscopy (SIMS) is used to study the separate and co-diffusions of silicon and indium from thin film sources. Indium is inferred to have a higher diffusion coefficient than silicon in GaAs and AlGaAs and to result in a similar degree of impurity-induced disordering of the single quantum-well laser structure.
Author: Paul David Swanson
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Languages : en
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Impurity induced layer disorder-delineated buried channel optical waveguide non-rectilinear routing structures are found to have loss properties equal to or better than other planar optical waveguides. With 3 dB loss angles of 3$spcirc$, for simple abrupt bends, and 7$spcirc$, for modified abrupt bends, and 3 dB transition lengths of $sim$300 $mu$m for S bends with a 100 $mu$m offset, these waveguides are capable of handling the routing requirements for many opto-electronic integrated circuit applications. A previously uncharacterized electro-absorption effect in a single quantum well graded barrier laser heterostructure was investigated as a means of providing electro-optic modulation and detection. This electroabsorption effect produced a change of over 100 cm$sp{-1}$ in the modal absorption coefficient with less than a volt change in bias. Based on these findings, the feasibility of using a single heterostructure for the integration of multiple optical devices is addressed.
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Category : Electrical engineering
Languages : en
Pages : 1606
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Author: T. A. DeTemple
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Category :
Languages : en
Pages : 3
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Since its discovery in 1981, the phenomena of impurity induced layer disordering (IILD), or intermixing, has received some attention because of its promise as a planar optically self aligned fabrication method for buried channel optical waveguide structures such as PIC or OEIC. The process is such that the intermixed region has a higher bandgap and hence lower index of refraction than the original structure permitting lateral index of refraction control via masks. originally seen in AlGaAs, the effect is now known to exist in three other laser related alloys, all of which contain graded Al-Ga layers and which preserve lattice matching after intermixing.
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Category : Aeronautics
Languages : en
Pages : 1014
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Languages : en
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We have fabricated optical channel waveguides in planar GaAs/AlGaAs waveguides using 10 MeV oxygen ions at a fluence of 3[times] l0[sup 13] and 3[times] l0[sup 14] ions/cm[sup 2]. Although disordering o GaAs/AlGaAs quantum well structures has previously been reported, to the best of the authors' knowledge the fabrication of channel waveguides using high energy oxygen bombardment has not been demonstrated in this material system. This technique may provide a totally new concept of localized material modifications in GaAs/AlGaAs waveguides by creating compositional disordered regions that act as optical confinement channels. The masking technique used to provide selective disordering of the planar waveguide structures will be presented. Optical measurements were performed on the channel waveguides at a wavelength of 1.3[mu]m.
