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Author: Hideaki Tsuchiya
Publisher: John Wiley & Sons
ISBN: 1118871723
Category : Technology & Engineering
Languages : en
Pages : 248
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Book Description
A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Author: Hideaki Tsuchiya
Publisher: John Wiley & Sons
ISBN: 1118871723
Category : Technology & Engineering
Languages : en
Pages : 248
Get Book
Book Description
A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Author: David Esseni
Publisher: Cambridge University Press
ISBN: 1139494384
Category : Technology & Engineering
Languages : en
Pages : 489
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Book Description
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Author: David Esseni
Publisher:
ISBN: 9780511933226
Category : Electron transport
Languages : en
Pages : 490
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Book Description
Provides the theoretical background and the physical insight needed to understand new and future developments in nanoscale CMOS technologies.
Author: Mark Lundstrom
Publisher: Springer Science & Business Media
ISBN: 0387280030
Category : Technology & Engineering
Languages : en
Pages : 223
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Book Description
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Author: Amara Amara
Publisher: Springer Science & Business Media
ISBN: 9048193796
Category : Technology & Engineering
Languages : en
Pages : 266
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Book Description
Emerging Technologies and Circuits contains a set of outstanding papers, keynote and tutorials presented during 3 days at the International Conference On Integrated Circuit Design and Technology (ICICDT) held in June 2008 in Minatec, Grenoble.
Author: Jacobus Swart
Publisher: BoD – Books on Demand
ISBN: 9533070455
Category : Technology & Engineering
Languages : en
Pages : 476
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Book Description
The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book.
Author: Cor L. Claeys
Publisher: The Electrochemical Society
ISBN: 1566775728
Category : Integrated circuits
Languages : en
Pages : 509
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Book Description
The symposium provided a forum for reviewing and discussing all aspects of process integration, with special focus on nanoscaled technologies, 65 nm and beyond on DRAM, SRAM, flash memory, high density logic-low power, RF, mixed analog-digital, process integration yield, CMP chemistries, low-k processes, gate stacks, metal gates, rapid thermal processing, silicides, copper interconnects, carbon nanotubes, novel materials, high mobility substrates (SOI, sSi, SiGe, GeOI), strain engineering, and hybrid integration.
Author: Yoshiro Hirayama
Publisher: Springer Nature
ISBN: 9811912017
Category : Science
Languages : en
Pages : 347
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Book Description
This book highlights recent advances in quantum control technologies with regard to hybrid quantum systems. It addresses the following topics: phonon engineering based on phononic crystals, carbon-based nano materials like graphene and nanotubes, Terahertz light technology for single-molecule and quantum dots, nuclear-spin-based metrology for semiconductor quantum systems, quantum anomalous Hall effect in magnetic topological insulators, chiral three-dimensional photonic crystals, and bio-inspired magnonic systems. Each topic, as a component in the framework of hybrid quantum systems, is concisely presented by experts at the forefront of the field. Accordingly, the book offers a valuable asset, and will help readers find advanced technologies and materials suitable for their purposes.
Author: Amit Chaudhry
Publisher: Springer Science & Business Media
ISBN: 1461468221
Category : Technology & Engineering
Languages : en
Pages : 211
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Book Description
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Author: Simon M. Sze
Publisher: John Wiley & Sons
ISBN: 0470068302
Category : Technology & Engineering
Languages : en
Pages : 828
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Book Description
The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.