Annealing of Ion-implanted Gallium Arsenide PDF Download
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Author: Kevin Gary Orrman-Rossiter
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 346
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Book Description
Author: Kevin Gary Orrman-Rossiter
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 346
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Book Description
Author: Mark R. Wilson
Publisher:
ISBN:
Category :
Languages : en
Pages : 442
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Book Description
Author: Gary Lynn Harris
Publisher:
ISBN:
Category : Ion implantation
Languages : en
Pages : 314
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Book Description
Author: Robert S. Mason
Publisher:
ISBN:
Category :
Languages : en
Pages : 68
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Book Description
Ion implanted GaAs, irradiated by a Q-switched ruby laser, is examined primarily by cathodoluminescence, as well as ellipsometry and electrical measurements, to evaluate the quality of laser anneal. Weak cathodoluminescence spectra from laser irradiated samples indicate far less radiative centers than in thermally annealed samples. Emitted radiation from existing centers is attenuated by the formation of a surface layer on GaAs during exposure to the ruby laser, resulting in spectra which is slightly weaker than spectra representative of the material's condition. This attenuating layer occurs in both virgin and implanted GaAs exposed to ruby laser radiation. Ion implanted Si, exposed to the same Q-switched ruby laser, is examined by Rutherford backscattering and indicates a return to crystallinity of the implant layer. (Author).
Author: C. L. Anderson
Publisher:
ISBN:
Category :
Languages : en
Pages : 140
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Book Description
Controlled atmosphere techniques were developed as an alternative to dielectric encapsulation for the high temperature anneal of ion implanted layers in GaAs. Two approaches: (1) the controlled atmosphere technique (CAT), and (2) the melt controlled ambient technique (MCAT) have been investigated. Using the CAT procedure, which involves annealing in flowing hydrogen with an arsenic overpressure, annealing without detectable surface erosion, has been performed at temperatures as high as 950 C, with or without encapsulants. Impurity diffusion, damage recovery, and electrical activity were investigated as a function of anneal parameters. Range studies of technologically important impurities such as S, Si, Se, Be and Mg were carried out. For the first time the role of the encapsulant on implanted profile degradation and the importance of Cr redistribution during the anneal cycle were determined. An improved CAT anneal system capable of production quantity throughput was developed and is in current use for device processing. (Author).
Author: Robert S. Mason (2LT, USAF.)
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 120
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Book Description
Author: Arkady Michael Horak
Publisher:
ISBN:
Category :
Languages : en
Pages : 78
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Author: Walter George Opyd
Publisher:
ISBN:
Category :
Languages : en
Pages : 164
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Book Description
Author: Lih-Yeh Liou
Publisher:
ISBN:
Category : Annealing of metals
Languages : en
Pages : 402
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 24
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Book Description
In summary, the DLTS measurements have not found any majority carrier traps with a concentration greater than 1x ten to the 13th power cc after annealing an implanted sample at 850 C The implanted and annealed samples were found to have the same minority carrier trap spectra as the capped and annealed control samples. The capping and annealing results point out the need to investigate other methods such as rapid thermal annealing and capless annealing in order to prevent surface damage on annealing.
