Analytical Modeling of Thermal Effects in Pnp InP-based Heterojunction Bipolar Transistors PDF Download
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Author: Robert E. Peddenpohl
Publisher:
ISBN:
Category :
Languages : en
Pages : 204
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Author: Robert E. Peddenpohl
Publisher:
ISBN:
Category :
Languages : en
Pages : 204
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Author: Yves Zimmermann
Publisher:
ISBN: 9783959081092
Category :
Languages : en
Pages : 184
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Author: Todd Conklin
Publisher:
ISBN:
Category :
Languages : en
Pages : 346
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Author: Tobias Nardmann
Publisher: BoD – Books on Demand
ISBN: 3744847063
Category : Technology & Engineering
Languages : en
Pages : 242
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Book Description
The trend in modern electronics towards ever higher frequencies of operation and complexity as well as power efficiency requires a whole palette of different technologies to be available to circuit designers for various applications. While MOSFETs dominate the digital world, they have apparently reached their top analogue performance around the 65nm node. Emerging technologies such as CNTFETs offer excellent properties such as very high linearity and speed in theory, but have yet to deliver on those promises in practice. Heterojunction bipolar transistors (HBTs), on the other hand, offer a number of key advantages over competing technologies: A very high transconductance and therefore a relatively low impact of a load impedance on the transistor operation, a high transit frequency and maximum frequency of oscillation at a comparatively relaxed feature size and favorable noise characteristics. Like all semiconductor devices, HBTs can be fabricated in diferent semiconductor materials. The most common are SiGe HBTs, which even today reach values above (ft; fmax) = (300; 500) GHz and are projected to eventually reach the THz range. However, HBTs fabricated in III-V materials offer a versatile alternative. Depending on the materials that are used, III-V HBTs can be the fastest available bipolar transistors (competing only with HEMTs, also fabricated in III-V materials, for the title of fastest available transistors overall), offer very high breakdown voltages and therefore excellent power-handling capability, show good linearity or low noise figures at high frequencies. Typical applications for III-V HBTs include handset PAs, high-effciency and high-speed amplifiers as well as high-speed oscillators . Overall, III-V-based HBTs and especially InP HBTs are excellent candidates for future high-speed communication circuits. The goal of this work is to include important effects occurring in III-V materials in a compact model for circuit design in a physical, yet intuitive way in order to aid deployment of III-V HBTs in prototypes and products. Additionally, the parameter extraction procedure for the compact model is described and analyzed in detail so an accurate, physics-based parameter set can be obtained. Finally, the agreement of the model with measurements is demonstrated for three different III-V HBT processes.
Author: Suman Datta
Publisher:
ISBN:
Category :
Languages : en
Pages : 552
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Author:
Publisher:
ISBN:
Category : Electrooptical devices
Languages : en
Pages : 602
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Author: Shen Shi
Publisher:
ISBN:
Category :
Languages : en
Pages : 402
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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In the past few years, GaAs and InP and, more recently, GaN based Npn and Pnp Heterojunction Bipolar Transistors (HBTs) have been grown and their performance has been evaluated in great details due to their potential applications in microwave, millimeter-wave, optoelectronics and high-speed applications. This model includes the physics of hole thermionic-emission-diffusion injection at the emitter-base heterojunction and transport of holes across a linearly doped base, a calculation of the recombination currents in the base current including the effects of linear base doping, and a comparison of the effects of linear and uniform doping on current gain and base transit time. Our simulations show that the use of non-uniform doping in the base of Pnp HBTs helps increasing the DC current gain by as much as a factor of 4. Simultaneously, we show that the base transit time, which is the major component to the overall delay time, is reduced by factor of 2. This should help increasing the unit current gain frequency and high frequency performance of Pnp HBTs.
Author: David S. Whitefield
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 246
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Author: Shean-Yih Chiu
Publisher:
ISBN:
Category :
Languages : en
Pages : 288
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