An Investigation of Electrical and Optical Properties of Reactively Sputtered Silicon Nitride and Amorphous Hydrogenated Silicon Thin Films PDF Download
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Author: Tae Hoon Kim
Publisher:
ISBN:
Category : Sputtering (Physics)
Languages : en
Pages : 168
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Author: Tae Hoon Kim
Publisher:
ISBN:
Category : Sputtering (Physics)
Languages : en
Pages : 168
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Author: Rajendra S. Khandelwal
Publisher:
ISBN:
Category : Sputtering (Physics)
Languages : en
Pages : 246
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Low temperature preparation of thin amorphous Silicon Nitride and Germanium Films by direct RF sputter deposition was investigated. Influence of various sputtering parameters on film properties was studied. Infrared transmission spectrophotometry was used to evaluate optical properties of the films whereas electrical characteristics of the films were determined from current-voltage measurements of MIS structures. For Silicon Nitride films it was observed that the stoichiometry, as indicated by the IR transmission, dielectric constant and current density versus square root of electric field measurements, was a strong function of the sputtering gas composition and particularly the Ar/N ratio in the sputtering gas. It was established from the current-voltage relationship that the dominant conduction mechanism in these films is of PooleFrenkel type. The current-voltage characteristics of the MIS devices were observed to be independent of the electrode material, device area and the film thickness. It is concluded that the insulating films thus deposited were comparable to those deposited using any other deposition method and is anticipated that due to the low deposition temperatures, sputtering may emerge as a highly potential process for optoelectronic device passivation.
Author: Divyang Manharlal Shah
Publisher:
ISBN:
Category : Sputtering (Physics)
Languages : en
Pages : 160
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Author: Wade H. Shafer
Publisher: Springer Science & Business Media
ISBN: 1461573947
Category : Science
Languages : en
Pages : 430
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Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Oata Analysis and Synthesis (CINOAS) * at Purdue. University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 33 (thesis year 1988) a total of 13,273 theses titles from 23 Canadian and 1 85 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 33 reports theses submitted in 1988, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.
Author: Vijay Narayanan
Publisher: World Scientific
ISBN: 9814740497
Category : Technology & Engineering
Languages : en
Pages : 550
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This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted.
Author:
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ISBN:
Category : Solar energy
Languages : en
Pages : 884
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Author:
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ISBN:
Category : Aeronautics
Languages : en
Pages : 240
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Author: Hanjin Cho
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 126
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The effect of the amorphous and glassy structure of amorphous germanium films on their electrical characteristics was investigated experimentally. The films were deposited onto silicon substrates using a modified MRC 8800 triode sputtering system. The Poole-Frenkel and Schottky mechanisms are discussed in detail and the shortcomings of the accepted picture of the former in amorphous materials are dealt with. It was concluded on the basis available evidence that the current flow in amorphous germanium favors the Poole-Frenkel mechanism at high fields. Amorphous hydrogenated germanium films which were deposited by bias sputtering were characterized by measuring the infrared absorption. The films have absorption peaks, as expected, at 1950 cḿ1 and at 570 cḿ1 due to GeH2 bonding and at 1880 cḿ1 due to GeH2 bonding. A method was described for determining the optical constants of a thin film deposited on a nonabsorbing window using a single set of transmittances over an absorption band. The method depends on the fact that the phase shift of the transmitted radiation can be determined from the transmittance by a Kramers-Kronig transform. The transmittance data of a-Ge:H and sputtered silicon nitride films were used to calculate their optical constants by this method. In a-Ge:H films, the value of the calculated refractive index in the k=0 region was not reasonable. However, for Si3N4 films, the calculated absorption coefficient was consistent with the experimental results.
Author: Bruce Dunnett
Publisher:
ISBN:
Category : Physical sciences
Languages : en
Pages :
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Author:
Publisher:
ISBN:
Category : Silicon dioxide
Languages : en
Pages : 306
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