An Analysis of the Effects of Low Energy Electron Radiation on AlxGa1-xN/GaN Modulation-doped Field-effect Transistors PDF Download
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Author: James M. Sattler (2LT, USAF.)
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 240
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Author: James M. Sattler (2LT, USAF.)
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 240
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Book Description
Author: James M. Sattler
Publisher:
ISBN: 9781423516590
Category :
Languages : en
Pages : 143
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The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0,45-1,2MeV electrons up to doses of 6*10(exp 16) e/ cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation I-V measurements indicate radiation-induced changes occur in these devices creating increased gate and drain currents These increased currents are only maintained at low temperatures (T
Author: Thomas D. Jarzen
Publisher:
ISBN:
Category : Electron mobility
Languages : en
Pages : 242
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Author: Heinrich Daembkes
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 544
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Author: Steven Lawrence Yellen
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 232
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Author: Kwyro Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 378
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Author: Heinrich Daembkes
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 484
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Author: Troy A. Uhlman
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 340
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Author: Paul Raymond De la Houssaye
Publisher:
ISBN:
Category : Modulation-doped field-effect transistors
Languages : en
Pages : 310
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Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2002
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