AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Using Liquid-phase Deposited High-k Gate Dielectrics PDF Download
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Author: 吳祖儀
Publisher:
ISBN:
Category :
Languages : en
Pages : 91
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Author: 吳祖儀
Publisher:
ISBN:
Category :
Languages : en
Pages : 91
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Author: 邱處安
Publisher:
ISBN:
Category :
Languages : en
Pages : 59
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 76
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Author: S. Kar
Publisher: The Electrochemical Society
ISBN: 1607682575
Category :
Languages : en
Pages : 504
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Author: 楊舜凱
Publisher:
ISBN:
Category :
Languages : en
Pages : 104
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Author: Hongyu Yu
Publisher: CRC Press
ISBN: 1351767607
Category : Science
Languages : en
Pages : 301
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Book Description
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 94
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Author: Qiliang Li
Publisher: MDPI
ISBN: 3039212257
Category : Technology & Engineering
Languages : en
Pages : 242
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Book Description
As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.
Author: Trupti Ranjan Lenka
Publisher: Springer Nature
ISBN: 9811921652
Category : Technology & Engineering
Languages : en
Pages : 246
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Book Description
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.
Author: 黃晟瑜
Publisher:
ISBN:
Category :
Languages : en
Pages : 84
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