Advanced Metallization Conference 2011 PDF Download
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Author:
Publisher:
ISBN: 9781618394262
Category : Metallic films
Languages : en
Pages : 142
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Book Description
Author:
Publisher:
ISBN: 9781618394262
Category : Metallic films
Languages : en
Pages : 142
Get Book Here
Book Description
![Selected Papers from the 20th European Workshop on Materials for Advanced Metallization 2011 (held Together with the International Interconnect Technology Conference IITC 2011) ; [... was Held in ... Dresden Congress Center, Germany ... from May 8 - 12, 2011 ... 34 Papers] PDF](https://books.google.com/books/content/images/frontcover/E5chjwEACAAJ?fife=w80-h100)
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 172
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Book Description
Author:
Publisher:
ISBN:
Category : Electric contacts
Languages : en
Pages :
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Book Description
Author: Krishna Seshan
Publisher: William Andrew
ISBN: 1437778747
Category : Technology & Engineering
Languages : en
Pages : 411
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Book Description
The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. - A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications - Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries - The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics - Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM - Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned 'Moore's Law' relating to the technology development cycle in the semiconductor industry
Author: Yan Li
Publisher: Springer
ISBN: 3319445863
Category : Technology & Engineering
Languages : en
Pages : 465
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Book Description
This volume provides a comprehensive reference for graduate students and professionals in both academia and industry on the fundamentals, processing details, and applications of 3D microelectronic packaging, an industry trend for future microelectronic packages. Chapters written by experts cover the most recent research results and industry progress in the following areas: TSV, die processing, micro bumps, direct bonding, thermal compression bonding, advanced materials, heat dissipation, thermal management, thermal mechanical modeling, quality, reliability, fault isolation, and failure analysis of 3D microelectronic packages. Numerous images, tables, and didactic schematics are included throughout. This essential volume equips readers with an in-depth understanding of all aspects of 3D packaging, including packaging architecture, processing, thermal mechanical and moisture related reliability concerns, common failures, developing areas, and future challenges, providing insights into key areas for future research and development.
Author: Mikhail Baklanov
Publisher: John Wiley & Sons
ISBN: 1119966868
Category : Technology & Engineering
Languages : en
Pages : 616
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Book Description
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Author: Massimo Rudan
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680
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Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Author: Muhammad Mustafa Hussain
Publisher: John Wiley & Sons
ISBN: 3527811850
Category : Technology & Engineering
Languages : en
Pages : 254
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Book Description
Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.
Author: Juan Pablo Borja
Publisher: Springer
ISBN: 3319432206
Category : Technology & Engineering
Languages : en
Pages : 109
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Book Description
This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics. Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.
Author: Roman Leitsmann
Publisher: John Wiley & Sons
ISBN: 3527667385
Category : Technology & Engineering
Languages : en
Pages : 234
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Book Description
An overview of the latest computational materials science methods on an atomic scale. The authors present the physical and mathematical background in sufficient detail for this highly current and important topic, but without unnecessary complications. They focus on approaches with industrial relevance, covering real-life applications taken from concrete projects that range from tribology modeling to performance optimization of integrated circuits. Following an introduction to the fundamentals, the book describes the most relevant approaches, covering such classical simulation methods as simple and reactive force field methods, as well as highly accurate quantum-mechanical methods ranging from density-functional theory to Hartree-Fock and beyond. A review of the increasingly important multiscale approaches rounds off this section. The last section demonstrates and illustrates the capabilities of the methods previously described using recent real-life examples of industrial applications. As a result, readers gain a heightened user awareness, since the authors clearly state the conditions of applicability for the respective modeling methods so as to avoid fatal mistakes.
