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Advanced Gate Stack Materials and Processes for Sub-100 Nm CMOS Applcations

Advanced Gate Stack Materials and Processes for Sub-100 Nm CMOS Applcations PDF Author: Qiang Lu
Publisher:
ISBN:
Category :
Languages : en
Pages : 320

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Book Description

Advanced Gate Stack Materials and Processes for Sub-100 Nm CMOS Applcations

Advanced Gate Stack Materials and Processes for Sub-100 Nm CMOS Applcations PDF Author: Qiang Lu
Publisher:
ISBN:
Category :
Languages : en
Pages : 320

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Book Description

Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS

Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS PDF Author:
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 658

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Book Description

Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2

Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2 PDF Author: Fred Roozeboom
Publisher: The Electrochemical Society
ISBN: 1566775027
Category : Gate array circuits
Languages : en
Pages : 472

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Book Description
These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Advanced Gate Materials and Processes for Sub-70 Nm CMOS Technology

Advanced Gate Materials and Processes for Sub-70 Nm CMOS Technology PDF Author: Pushkar Sharad Ranade
Publisher:
ISBN:
Category :
Languages : en
Pages : 276

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Book Description

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment PDF Author: P. J. Timans
Publisher: The Electrochemical Society
ISBN: 1566776260
Category : Gate array circuits
Languages : en
Pages : 488

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Book Description
This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment PDF Author: V. Narayanan
Publisher: The Electrochemical Society
ISBN: 1566777097
Category : Gate array circuits
Languages : en
Pages : 367

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Book Description
This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment PDF Author: E. P. Gusev
Publisher: The Electrochemical Society
ISBN: 1566777917
Category : Science
Languages : en
Pages : 426

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Book Description
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7 PDF Author: F. Roozeboom
Publisher: The Electrochemical Society
ISBN: 1607688085
Category :
Languages : en
Pages : 279

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Book Description

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices PDF Author: David Harame
Publisher: The Electrochemical Society
ISBN: 1566776562
Category : Electronic apparatus and appliances
Languages : en
Pages : 1136

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Book Description
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

Frontiers In Electronics (With Cd-rom) - Proceedings Of The Wofe-04

Frontiers In Electronics (With Cd-rom) - Proceedings Of The Wofe-04 PDF Author: Michael S Shur
Publisher: World Scientific
ISBN: 9814477478
Category : Technology & Engineering
Languages : en
Pages : 774

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Book Description
Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.