Author: Mirza Arif BaigPublisher:
ISBN:
Category :
Languages : en
Pages : 200
Book Description
A Study of Temperature Field in a GaN Heterostructure Field-Effect Transistor
Author: Mirza Arif BaigPublisher:
ISBN:
Category :
Languages : en
Pages : 200
Book Description
Ambient Temperature Effects on the Performance of A1GaN/GaN Heterostructure Field-effect Transistors
Author: Yang-An TanPublisher:
ISBN:
Category : Microwave devices
Languages : en
Pages : 138
Book Description
Thermal Analysis of AlGaN/GaN Heterostructure Field Effect Transistors Using Nematic Liquid Crystals and In-house Codes
Author: Dimitri KakovitchPublisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 58
Book Description
The Effects of Temperature and Electron Radiation on the Electrical Properties of A1GaN/GaN Heterostructure Field Effect Transistors
Author: Jeffrey T. MoranPublisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 104
Book Description
GaN heterostructure field effect transistors
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
A summary of the performance of AlGaN/GaN heterostructure field effect transistors on sapphire and SiC substrates are presented. High total power have been demonstrated by these devices at microwave frequencies. The prospects of utilizing the devices for high power integrated amplifiers are excellent although the issue of thermal management will need to be addressed especially for devices and circuits on sapphire.
Handbook for III-V High Electron Mobility Transistor Technologies
Author: D. NirmalPublisher: CRC Press
ISBN: 0429862539
Category : Science
Languages : en
Pages : 430
Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Issues in Applied Physics: 2011 Edition
Author: Publisher: ScholarlyEditions
ISBN: 1464963371
Category : Science
Languages : en
Pages : 3912
Book Description
Issues in Applied Physics / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Applied Physics. The editors have built Issues in Applied Physics: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Applied Physics in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Applied Physics: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
RF Small Signal and Thermal Characterization of GaN Based Heterojunction Field Effect Transistors
Author: Fatima HusnaPublisher:
ISBN:
Category :
Languages : en
Pages : 206
Book Description
GaN and Related Materials
Author: Stephen J. PeartonPublisher: CRC Press
ISBN: 9789056995171
Category : Science
Languages : en
Pages : 556
Book Description
Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
