Author: Aaditya MahajanPublisher:
ISBN:
Category :
Languages : en
Pages : 256
Book Description
A Study of Enhancement-mode Modulation Doped Field Effect Transistors on Lattice Matched Indium Phosphide Based Semiconductor Compounds
Author: Aaditya MahajanPublisher:
ISBN:
Category :
Languages : en
Pages : 256
Book Description
DC and RF Characterization of Gallium Indium Arsenide/aluminum Indium Arsenide/indium Phosphide Modulation Doped Field Effect Transistors for Millimeter Wave Device Applications
Author: Lauren Fay PalmateerPublisher:
ISBN:
Category : Doped semiconductor superlattices
Languages : en
Pages : 434
Book Description
Double-doped Double-strained Modulation Doped Field Effect Transistor 3D-SMODFET
Author: Glenn Harvey MartinPublisher:
ISBN:
Category :
Languages : en
Pages : 302
Book Description
Modulation-doped Field-effect Transistors for Low Distortion Microwave Mixing Applications
Author: Eric W. LinPublisher:
ISBN:
Category :
Languages : en
Pages : 388
Book Description
Electrical & Electronics Abstracts
Author: Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1722
Book Description
Design Principles and Performance of Modulation-doped Field Effect Transistors for Low Noise Microwave Amplification
Author: Lovell H. CamnitzPublisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 430
Book Description
Modulation-doped Field Effect Transistors for High-power Microwave Applications
Author: Ronald Waldo GrundbacherPublisher:
ISBN:
Category :
Languages : en
Pages : 256
Book Description
The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.
Japanese Science and Technology, 1983-1984
Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information BranchPublisher:
ISBN:
Category : Science
Languages : en
Pages : 1080
Book Description
Submicrometer-gate Indium Phosphide-based Field-effect Transistors for High-frequency Applications
Author: Jente Benedict KuangPublisher:
ISBN:
Category :
Languages : en
Pages : 370
Book Description
Ceramic Abstracts
Author: American Ceramic SocietyPublisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 1058
Book Description
