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Author: Young Suh Song
Publisher: Springer Nature
ISBN: 9819966493
Category :
Languages : en
Pages : 930
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Book Description
Author: Young Suh Song
Publisher: Springer Nature
ISBN: 9819966493
Category :
Languages : en
Pages : 930
Get Book Here
Book Description
Author: Samar K. Saha
Publisher: CRC Press
ISBN: 1351831070
Category : Technology & Engineering
Languages : en
Pages : 385
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Book Description
Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
Author: Yasuhisa Omura
Publisher: The Electrochemical Society
ISBN: 1566778662
Category : Technology & Engineering
Languages : en
Pages : 347
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Book Description
This is the continuation of the long running ¿Silicon-on-Insulator Technology and Devices¿ symposium. The issue of ECS Transactions covers recent significant advances in SOI technologies, SOI-based nanoelectronics and innovative applications including scientific interests. It will be of interest to materials and device scientists, as well as to process and applications oriented engineers and scientists.
Author: Nadine Collaert
Publisher: Elsevier
ISBN: 0128234504
Category : Technology & Engineering
Languages : en
Pages : 369
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Book Description
New Materials and Devices for 5G Applications and Beyond focuses on the materials, device architectures and enabling integration schemes for 5G applications and emerging technologies. It gives a comprehensive overview of the trade-offs, challenges and unique properties of novel upcoming technologies. Starting from the application side and its requirements, the book examines different technologies under consideration for the different functions, both more conventional to exploratory, and within this context the book provides guidance to the reader on how to possibly optimize the system for a particular application. This book aims at guiding the reader through the technologies required to enable 5G applications, with the main focus on mm-wave frequencies, up to THz. New Materials and Devises for 5G Applications and Beyond is suitable for industrial researchers and development engineers, and researchers in materials science, device engineering and circuit design. - Reviews challenges and emerging opportunities for materials, devices, and integration to enable 5G technologies - Includes discussion of technologies such as RF-MEMs, RF FINFETs, and transistors based on current and emerging materials (InP, GaN, etc.) - Focuses on mm-wave frequencies up to the terahertz regime
Author: Zhigang Zang
Publisher: John Wiley & Sons
ISBN: 3527352252
Category : Technology & Engineering
Languages : en
Pages : 293
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Book Description
Metal Oxide Semiconductors Up-to-date resource highlighting highlights emerging applications of metal oxide semiconductors in various areas and current challenges and directions in commercialization Metal Oxide Semiconductors provides a current understanding of oxide semiconductors, covering fundamentals, synthesizing methods, and applications in diodes, thin-film transistors, gas sensors, solar cells, and more. The text presents state-of-the-art information along with fundamental prerequisites for understanding and discusses the current challenges in pursuing commercialization and future directions of this field. Despite rapid advancements in the materials science and device physics of oxide semiconductors over the past decade, the understanding of science and technology in this field remains incomplete due to its relatively short research history; this book aims to bridge the gap between the rapidly advancing research progress in this field and the demand for relevant materials and devices by researchers, engineers, and students. Written by three highly qualified authors, Metal Oxide Semiconductors discusses sample topics such as: Fabrication techniques and principles, covering vacuum-based methods, including sputtering, atomic layer deposition and evaporation, and solution-based methods Fundamentals, progresses, and potentials of p–n heterojunction diodes, Schottky diodes, metal-insulator-semiconductor diodes, and self-switching diodes Applications in thin-film transistors, detailing the current progresses and challenges towards commercialization for n-type TFTs, p-type TFTs, and circuits Detailed discussions on the working mechanisms and representative devices of oxide-based gas sensors, pressure sensors, and PH sensors Applications in optoelectronics, both in solar cells and ultraviolet photodetectors, covering their parameters, materials, and performance Memory applications, including resistive random-access memory, transistor-structured memory devices, transistor-structured artificial synapse, and optical memory transistors A comprehensive monograph covering all aspects of oxide semiconductors, Metal Oxide Semiconductors is an essential resource for materials scientists, electronics engineers, semiconductor physicists, and professionals in the semiconductor and sensor industries who wish to understand all modern developments that have been made in the field.
Author: Brajesh Kumar Kaushik
Publisher: CRC Press
ISBN: 1351670220
Category : Science
Languages : en
Pages : 432
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Book Description
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Author: Tsu-Jae King Liu
Publisher: Cambridge University Press
ISBN: 1316148025
Category : Technology & Engineering
Languages : en
Pages : 439
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Book Description
Get up to speed with the future of logic switch design with this indispensable overview of the most promising successors to modern CMOS transistors. Learn how to overcome existing design challenges using novel device concepts, presented using an in-depth, accessible, tutorial-style approach. Drawing on the expertise of leading researchers from both industry and academia, and including insightful contributions from the developers of many of these alternative logic devices, new concepts are introduced and discussed from a range of different viewpoints, covering all the necessary theoretical background and developmental context. Covering cutting-edge developments with the potential to overcome existing limitations on transistor performance, such as tunneling field-effect transistors (TFETs), alternative charge-based devices, spin-based devices, and more exotic approaches, this is essential reading for academic researchers, professional engineers, and graduate students working with semiconductor devices and technology.
Author: Pedram Khalili Amiri
Publisher: MDPI
ISBN: 3039285025
Category : Technology & Engineering
Languages : en
Pages : 276
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Book Description
Computing systems are undergoing a transformation from logic-centric towards memory-centric architectures, where overall performance and energy efficiency at the system level are determined by the density, performance, functionality and efficiency of the memory, rather than the logic sub-system. This is driven by the requirements of data-intensive applications in artificial intelligence, autonomous systems, and edge computing. We are at an exciting time in the semiconductor industry where several innovative device and technology concepts are being developed to respond to these demands, and capture shares of the fast growing market for AI-related hardware. This special issue is devoted to highlighting, discussing and presenting the latest advancements in this area, drawing on the best work on emerging memory devices including magnetic, resistive, phase change, and other types of memory. The special issue is interested in work that presents concepts, ideas, and recent progress ranging from materials, to memory devices, physics of switching mechanisms, circuits, and system applications, as well as progress in modeling and design tools. Contributions that bridge across several of these layers are especially encouraged.
Author: K. Sivasankaran
Publisher: Springer Nature
ISBN: 981990157X
Category : Computers
Languages : en
Pages : 98
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Book Description
This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.
Author: D. Harame
Publisher: The Electrochemical Society
ISBN: 1607685434
Category :
Languages : en
Pages : 1042
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Book Description
