Znxcd1-xse/ Znycd1-y Se Cladded Quantum Dot Based Electroluminescent and Nonvolatile Memory Devices PDF Download
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Author: Fuad H Al-Amody
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages :
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Book Description
This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1–xSe-ZnyCd1–y Se QDs to have a low composition of zinc in the core than the cladding (x.
Author: Fuad H Al-Amody
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages :
Get Book Here
Book Description
This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1–xSe-ZnyCd1–y Se QDs to have a low composition of zinc in the core than the cladding (x.
Author: Fuad Al-Amoody
Publisher: LAP Lambert Academic Publishing
ISBN: 9783848448302
Category :
Languages : en
Pages : 128
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Book Description
This book presents devices which are fabricated using high energy gap ZnyCd1-ySe cladded ZnxCd1-xSe quantum dots (y>x). These QDs are pseudomorphic (nearly lattice-matched core and the shell of the dot)in nature which makes them have less stress and dislocation. The QD devices are unique as they utilize the pseudomorphic structure of these QDs. One of the devices mentioned in this book is a floating quantum dot gate nonvolatile memory where cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe). The cladded dots are grown using a novel improved methodology of photo-assisted microwave plasma metalorganic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The composition of quantum dot cladding, which relates to the value of y in ZnyCd1-ySe, is engineered by the intensity of ultraviolet light which controls the incorporation of zinc in ZnCdSe. The quantum dot quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots, as well as, two diverse types of devices are presented in this book. Also the fabrication of the QDs and the devices will be talked about in detail.
