Understanding the Growth of Dilute Nitrides from First-Principles PDF Download
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Author: Hazem Abu Farsakh
Publisher: Sudwestdeutscher Verlag Fur Hochschulschriften AG
ISBN: 9783838122151
Category :
Languages : en
Pages : 176
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Book Description
Due to the large band-gap bowing associated with low N contents in III-V semiconductors, ternary and quaternary dilute nitride alloys have sparked interest over the last years for a wide range of technological applications. However, the realization of these alloys has been hampered by several challenges such as the extremely low equilibrium solubility of N and composition fluctuations. In order to overcome these challenges a detailed understanding of the growth of these alloys at the atomic level is crucial. Therefore, by employing state-of-the art first-principles calculations, this work provides (i) a detailed study of the thermodynamic N solubility limits at technologically relevant GaAs and InAs surfaces/subsurfaces as function of growth conditions, and (ii) the kinetic mechanisms for N adatoms that affect and control their incorporation, such as adatom diffusion and surface/subsurface substitution. A detailed analysis of the interplay between thermodynamics and kinetics allowed to predict the optimum conditions for N incorporation and to explain experimental results. This study provides a prototype for understanding the growth highly mismatched multi-component alloys.
Author: Hazem Abu Farsakh
Publisher: Sudwestdeutscher Verlag Fur Hochschulschriften AG
ISBN: 9783838122151
Category :
Languages : en
Pages : 176
Get Book
Book Description
Due to the large band-gap bowing associated with low N contents in III-V semiconductors, ternary and quaternary dilute nitride alloys have sparked interest over the last years for a wide range of technological applications. However, the realization of these alloys has been hampered by several challenges such as the extremely low equilibrium solubility of N and composition fluctuations. In order to overcome these challenges a detailed understanding of the growth of these alloys at the atomic level is crucial. Therefore, by employing state-of-the art first-principles calculations, this work provides (i) a detailed study of the thermodynamic N solubility limits at technologically relevant GaAs and InAs surfaces/subsurfaces as function of growth conditions, and (ii) the kinetic mechanisms for N adatoms that affect and control their incorporation, such as adatom diffusion and surface/subsurface substitution. A detailed analysis of the interplay between thermodynamics and kinetics allowed to predict the optimum conditions for N incorporation and to explain experimental results. This study provides a prototype for understanding the growth highly mismatched multi-component alloys.
Author: I. Buyanova
Publisher: CRC Press
ISBN: 1482296497
Category : Science
Languages : en
Pages : 457
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Book Description
Since their development in the 1990s, it has been discovered that diluted nitrides have intriguing properties that are not only distinct from those of conventional semiconductor materials, but also are conducive to various applications in optoelectronics and photonics. The book examines these applications and presents a broad and in-depth look at t
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 788
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Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author:
Publisher:
ISBN:
Category : Crystals
Languages : en
Pages : 556
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Book Description
Author: Joachim Piprek
Publisher: CRC Press
ISBN: 149874947X
Category : Science
Languages : en
Pages : 835
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Book Description
• Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. • Gives a broad overview of concepts with concise explanations illustrated by real results. • Compares different levels of modeling, from simple analytical models to complex numerical models. • Discusses practical methods of model validation. • Includes an overview of numerical techniques.
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 994
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Book Description
Author: Hajime Asahi
Publisher: John Wiley & Sons
ISBN: 1119355028
Category : Science
Languages : en
Pages : 660
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Book Description
Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Author: Roshan Lal Aggarwal
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 350
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Book Description
Author: Sadamichi Maekawa
Publisher: Oxford University Press
ISBN: 0198787073
Category : Science
Languages : en
Pages : 541
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Book Description
In a new branch of physics and technology, called spin-electronics or spintronics, the flow of electrical charge (usual current) as well as the flow of electron spin, the so-called "spin current", are manipulated and controlled together. This book is intended to provide an introduction and guide to the new physics and applications of spin current.
Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1908979941
Category :
Languages : en
Pages : 440
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Book Description
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals.
