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Author: Ludwig Treitinger
Publisher: Springer Science & Business Media
ISBN: 3642743609
Category : Technology & Engineering
Languages : en
Pages : 171
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Book Description
Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Author: Ludwig Treitinger
Publisher: Springer Science & Business Media
ISBN: 3642743609
Category : Technology & Engineering
Languages : en
Pages : 171
Get Book Here
Book Description
Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Author: Johann-Friedrich Luy
Publisher: Springer Science & Business Media
ISBN: 3642790313
Category : Technology & Engineering
Languages : en
Pages : 359
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Book Description
A description of field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are covered, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter, while two whole chapters are devoted to silicon/germanium devices. The integration of devices in monolithic circuits is explained together with advanced technologies, such as the self-mixing oscillator operation, before concluding with sensor and system applications.
Author: Peter Ashburn
Publisher: John Wiley & Sons
ISBN: 0470090731
Category : Technology & Engineering
Languages : en
Pages : 286
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Book Description
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Author: Takashi Hori
Publisher: Springer Science & Business Media
ISBN: 3642608566
Category : Science
Languages : en
Pages : 362
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Book Description
Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.
Author: Nils W. Carlson
Publisher: Springer Science & Business Media
ISBN: 3642789420
Category : Science
Languages : en
Pages : 405
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Book Description
Although semiconductor-diode lasers are the most compact, highest gain and most efficient laser sources, difficulties remain in developing structures that will produce high-quality, diffraction-limited output beams. Indeed, only a few designs have emerged with the potential for producing high-power, high-brightness monolithic sources. This book presents and analyzes the results of work performed over the past two decades in the development of such diode-laser arrays.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 826
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Book Description
Author: K.v. Klitzing
Publisher: Springer Science & Business Media
ISBN: 3642772749
Category : Science
Languages : en
Pages : 298
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Book Description
Single-electron tunneling (SET) and related phenomena have recently come to be considered as "hot topics". This also became apparent when we organized the 4th International Conference on Superconducting and Quantum Effect Devices and Their Applications, SQUID'91, which was held June 18-21, 1991, in Berlin, Germany. Impressed by the number of contributions dedicated to the new physics of ultrasmall devices, we deemed it appropriate to devote this volume of the Springer Series in Electronics and Photonics to these specialized proceedings. The other contributions presented at SQUID'91, which are more conventional in character but nevertheless contain excitingly innovative results, are published separately as Volume 64 of the series Springer Proceedings in Physics. At first glance it seems strange that a conference abbreviated SQUID'91 should attract so many papers on non-superconducting devices, and in fact the first SQUID'XX conferences dealt exclusively with the physics and technology of Josephson junctions, SQUIDs and other superconducting devices and their ap plications. However, many concepts developed for superconducting devices, like tunneling, flux quantization, and flux-charge conjugation, appeared to be suitable for ultrasmall non-superconducting structures as well, and many researchers in the field of superconducting devices extended their activities accordingly. Thus the extension of the conference programme evolved quite informally. Meanwhile, the meetings established themselves as well-known conference series tradition ally appreciated by the SQUID community for its balanced mixture of physics and technology, review and preview. SQUID'XX became a kind of a trademark.
Author: Federico Capasso
Publisher: Springer Science & Business Media
ISBN: 3642747515
Category : Technology & Engineering
Languages : en
Pages : 416
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Book Description
The ability to engineer the bandstructure and the wavefunction over length scales previously inaccessible to technology using artificially structured materials and nanolithography has led to a new class of electron semiconductor devices whose operation is controlled by quantum effects. These structures not only represent exciting tools for investigating new quantum phenomena in semiconductors, but also offer exciting opportunities for applications. This book gives the first comprehensive treatment of the physics of quantum electron devices. This interdisciplinary field, at the junction between material science, physics and technology, has witnessed an explosive growth in recent years. This volume presents a detailed coverage of the physics of the underlying phenomena, and their device and circuit applications, together with fabrication and growth technology.
Author: Chen S. Tsai
Publisher: Springer Science & Business Media
ISBN: 364275225X
Category : Science
Languages : en
Pages : 330
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Book Description
The field of integrated- or guided-wave optics has experienced significant and continuous growth since its inception in the late 1960s. There has been a considerable increase in research and development activity in this field worldwide and some significant advances in the realization of working in tegrated optic devices and modules have been made in recent years. In fact, there have already been some commercial manufacturing and technical ap plications of such devices and modules. The guided-wave-acoustooptics involving Bragg interactions between guided optical waves and surface acoustic waves is one of the areas of in tegrated-optics that has reached some degree of scientific and technological maturity. This topical volume is devoted to an in-depth treatment of this emerging branch of science and technology. Presented in this volume are concise treatments on bulk-wave acoustooptics, guided-wave optics, and surface acoustic waves, and detailed studies of guided-wave acoustooptic Bragg diffraction in three promising material substrates, namely, LiNb0 , 3 ZnO/Si0 , and GaAs, the resulting wide band modulators and deflectors, 2 and applications. The chapters cover not only the basic principles and the oretical analysis, but also the design, fabrication, and measurement of the resulting devices and modules, and their applications.
Author: Hyatt M. Gibbs
Publisher: Springer Science & Business Media
ISBN: 3642754384
Category : Science
Languages : en
Pages : 218
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Book Description
Nonlinear photonics is the name given to the use of nonlinear optical devices for the generation, communication, processing, or analysis of information. This book is a progress report on research into practical applications of such devices. At present, modulation, switching, routing, decision-making, and detection in photonic systems are all done with electronics and linear optoelectronic devices. However, this may soon change, as nonlinear optical devices, e.g. picosecond samplers and switches, begin to complement optoelectonic devices. The authors succinctly summarize past accomplishments in this field and point to hopes for the future, making this an ideal book for newcomers or seasoned researchers wanting to design and perfect nonlinear optical devices and to identify applications in photonic systems.
