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Author: D. K. Roy
Publisher: Elsevier
ISBN: 1483278956
Category : Technology & Engineering
Languages : en
Pages : 230
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Book Description
Tunnelling and Negative Resistance Phenomena in Semiconductors presents a critical review of tunneling theory and shows how this leads to the negative resistance phenomena in pn junctions. The physics, technology, and circuitry of semiconductor negative resistance devices are surveyed. The book challenges the conventional assumptions of tunneling theory and proposes an alternative approach that allows the possibility of a change in energy during tunneling. It also introduces the reader to the manufacture, operation, and applications of semiconductor negative resistance devices. Comprised of five chapters, this volume begins by presenting a logical physical interpretation of the wavefunction with its so-called ill-behaved nature and considering other consequences of the energy distribution effect. The next chapter is devoted to the tunneling effect through tunnel diodes along with other properties of this device. The circuitry and technology of tunnel diodes as well as backward and Zener diodes are then examined, along with negative conductance devices that are used as microwave sources. The final chapter is concerned with negative conductance switching devices. This book is intended for students and practitioners in the fields of physics and electronics.
Author: D. K. Roy
Publisher: Elsevier
ISBN: 1483278956
Category : Technology & Engineering
Languages : en
Pages : 230
Get Book Here
Book Description
Tunnelling and Negative Resistance Phenomena in Semiconductors presents a critical review of tunneling theory and shows how this leads to the negative resistance phenomena in pn junctions. The physics, technology, and circuitry of semiconductor negative resistance devices are surveyed. The book challenges the conventional assumptions of tunneling theory and proposes an alternative approach that allows the possibility of a change in energy during tunneling. It also introduces the reader to the manufacture, operation, and applications of semiconductor negative resistance devices. Comprised of five chapters, this volume begins by presenting a logical physical interpretation of the wavefunction with its so-called ill-behaved nature and considering other consequences of the energy distribution effect. The next chapter is devoted to the tunneling effect through tunnel diodes along with other properties of this device. The circuitry and technology of tunnel diodes as well as backward and Zener diodes are then examined, along with negative conductance devices that are used as microwave sources. The final chapter is concerned with negative conductance switching devices. This book is intended for students and practitioners in the fields of physics and electronics.
Author: Dilip K Roy
Publisher: Universities Press
ISBN: 9788173714948
Category : Amorphous semiconductors
Languages : en
Pages : 492
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Book Description
Author: Laszlo Solymar
Publisher: Oxford University Press
ISBN: 0198702779
Category : Science
Languages : en
Pages : 501
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Book Description
"A classic text in the field, providing a readable and accessible guide for students of electrical and electronic engineering. Ideal for undergraduates, the book is also an invaluable reference for graduate students and others wishing to explore this rapidly expanding field." -Cover.
Author: Sylvester P. Gentile
Publisher:
ISBN:
Category : Tunnel diodes
Languages : en
Pages : 322
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Book Description
Author: L.L. Chang
Publisher: Springer Science & Business Media
ISBN: 1461538467
Category : Science
Languages : en
Pages : 526
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Book Description
This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.
Author: B. K. Tanner
Publisher: Elsevier
ISBN: 1483187683
Category : Science
Languages : en
Pages : 189
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Book Description
X-Ray Diffraction Topography presents an elementary treatment of X-ray topography which is comprehensible to the non-specialist. It discusses the development of the principles and application of the subject matter. X-ray topography is the study of crystals which use x-ray diffraction. Some of the topics covered in the book are the basic dynamical x-ray diffraction theory, the Berg-Barrett method, Lang's method, double crystal methods, the contrast on x-ray topography, and the analysis of crystal defects and distortions. The crystals grown from solution are covered. The naturally occurring crystals are discussed. The text defines the meaning of melt, solid state and vapour growth. An analysis of the properties of inorganic crystals is presented. A chapter of the volume is devoted to the characteristics of metals. Another section of the book focuses on the production of ice crystals and the utilization of oxides as laser materials. The book will provide useful information to chemists, scientists, students and researchers.
Author:
Publisher: Academic Press
ISBN: 0080863973
Category : Technology & Engineering
Languages : en
Pages : 393
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Book Description
Semiconductors and Semimetals
Author: Nobelstiftelsen
Publisher:
ISBN:
Category : Nobel Prizes
Languages : en
Pages : 260
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Book Description
Author: N. Balkan
Publisher:
ISBN: 9780198500582
Category : Science
Languages : en
Pages : 536
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Book Description
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.
Author: Clive Poole
Publisher: Academic Press
ISBN: 0124079377
Category : Technology & Engineering
Languages : en
Pages : 668
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Book Description
This book teaches the skills and knowledge required by today's RF and microwave engineer in a concise, structured and systematic way. Reflecting modern developments in the field, this book focuses on active circuit design covering the latest devices and design techniques. From electromagnetic and transmission line theory and S-parameters through to amplifier and oscillator design, techniques for low noise and broadband design; This book focuses on analysis and design including up to date material on MMIC design techniques. With this book you will: - Learn the basics of RF and microwave circuit analysis and design, with an emphasis on active circuits, and become familiar with the operating principles of the most common active system building blocks such as amplifiers, oscillators and mixers - Be able to design transistor-based amplifiers, oscillators and mixers by means of basic design methodologies - Be able to apply established graphical design tools, such as the Smith chart and feedback mappings, to the design RF and microwave active circuits - Acquire a set of basic design skills and useful tools that can be employed without recourse to complex computer aided design - Structured in the form of modular chapters, each covering a specific topic in a concise form suitable for delivery in a single lecture - Emphasis on clear explanation and a step-by-step approach that aims to help students to easily grasp complex concepts - Contains tutorial questions and problems allowing readers to test their knowledge - An accompanying website containing supporting material in the form of slides and software (MATLAB) listings - Unique material on negative resistance oscillator design, noise analysis and three-port design techniques - Covers the latest developments in microwave active circuit design with new approaches that are not covered elsewhere
