Transition-Metal Defects in Silicon PDF Download
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Author: Michael Steger
Publisher: Springer Science & Business Media
ISBN: 3642350798
Category : Science
Languages : en
Pages : 108
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Book Description
The fundamental properties of deep luminescence centres in Si associated with transition metals such as Cu, Ag, Au, and Pt have been a focus of interest for decades, both as markers for these deleterious contaminants, and also in the quest for efficient Si-based light emission. This dissertation presents the results of ultra-high resolution photoluminescence studies of these centres in specially prepared, highly enriched 28-Si samples. The greatly improved spectral resolution due to this enrichment led to the discovery of isotopic fingerprints. These fingerprints have revealed that the detailed constituents of all of the centres previously studied had been identified incorrectly. They also revealed the existence of several different families of impurity complexes containing either four or five atoms chosen from Li, Cu, Ag, Au, and Pt. These centres’ constituents have been determined, together with no-phonon transition energies, no-phonon isotope shifts, local vibrational mode energies, and the isotope shifts of the local vibrational mode energies. The data presented here for these centres should prove useful for the currently sought theoretical explanations of their formation, stability, and properties.
Author: Michael Steger
Publisher: Springer Science & Business Media
ISBN: 3642350798
Category : Science
Languages : en
Pages : 108
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Book Description
The fundamental properties of deep luminescence centres in Si associated with transition metals such as Cu, Ag, Au, and Pt have been a focus of interest for decades, both as markers for these deleterious contaminants, and also in the quest for efficient Si-based light emission. This dissertation presents the results of ultra-high resolution photoluminescence studies of these centres in specially prepared, highly enriched 28-Si samples. The greatly improved spectral resolution due to this enrichment led to the discovery of isotopic fingerprints. These fingerprints have revealed that the detailed constituents of all of the centres previously studied had been identified incorrectly. They also revealed the existence of several different families of impurity complexes containing either four or five atoms chosen from Li, Cu, Ag, Au, and Pt. These centres’ constituents have been determined, together with no-phonon transition energies, no-phonon isotope shifts, local vibrational mode energies, and the isotope shifts of the local vibrational mode energies. The data presented here for these centres should prove useful for the currently sought theoretical explanations of their formation, stability, and properties.
Author: Janos Olajos
Publisher:
ISBN: 9789179007973
Category :
Languages : en
Pages : 36
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Book Description
Author: Klaus Graff
Publisher: Springer Science & Business Media
ISBN: 3642571212
Category : Technology & Engineering
Languages : en
Pages : 285
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Book Description
This up-to-date monograph provides a thorough review of the relevant data and properties of the transition-metal impurities generated during silicon-sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. This new edition includes important recent data and many new tables.
Author: Kevin Gerard McGuigan
Publisher:
ISBN:
Category : Luminescence
Languages : en
Pages : 176
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Book Description
Author: Cor Claeys
Publisher: Springer
ISBN: 3319939254
Category : Technology & Engineering
Languages : en
Pages : 464
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Book Description
This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
Author: Benedikt Tissot
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Author: Leopold Scheffler
Publisher: Cuvillier Verlag
ISBN: 373694988X
Category : Science
Languages : en
Pages : 124
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Book Description
Silizium ist ein wichtiger Rohstoff unserer modernen Welt. Mikroelektronik, Sensorik und Photovoltaik sind drei wichtige Anwendungsgebiete, die aus unserem täglichen Leben heute nicht mehr wegzudenken sind. Entscheidend für all diese Anwendungen ist das Verständnis der elektrischen Eigenschaften des Materials, welche durch Defekte und Verunreinigungen beeinflusst werden. Die Übergangsmetalle sind eine wichtige Klasse von Verunreinigungen im Silizium, da sie die elektrischen Eigenschaften stark beeinflussen. Auch ist bekannt, dass Wasserstoff, welcher in vielen Prozessen in Silizium eindringen kann, mit vielen Defekten reagiert. In der vorliegenden Dissertation wird die Wechselwirkung von Wasserstoff mit den Metallen Titan, Kobalt und Nickel mit Hilfe der kapazitiven Messmethoden DLTS und MCTS untersucht. Verschiedene elektrisch aktive Metall-Wasserstoff-Komplexe können nachgewiesen werden. Auch eine Passivierung der Metalle durch Wasserstoff wird beobachtet. Neben den Reaktionen mit den Metallen wird auch eine Wechselwirkung des Wasserstoffs mit im Silizium vorhandenem Kohlenstoff untersucht. Für eine Einordnung der Ergebnisse werden diese mit dem aus der Literatur bekannten Verhalten benachbarter Elemente verglichen.
Author: Gordon Davies
Publisher:
ISBN:
Category :
Languages : en
Pages : 548
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Book Description
Partial contents of Part 1 of this symposium include: (1) Microstructure of hydrogen and dopants in hydrogenated amorphous Si; (2) Diffusion and drift of hydrogen in silicon and gallium arsenides; (3) Hydrogen-induced platelets in silicon: separation of nucleation and growth; (4) Hydrogen effusion from doped monocrystalline B-doped silicon; (5) Effect of multiple trapping on hydrogen diffusion in Si; (6) Measurements of the diffusion coefficient of hydrogen in silicon monitored by catalyzed enhanced oxygen diffusion jumps; (7) Passivation of shallow acceptors in Si and GaAs by annealing in H2; (8) Spectroscopy on transition metal defects in silicon; (9) Magneto-optical properties of iron -- aluminium pairs in silicon; (10) Interaction of a copper-induced defect with shallow acceptors; (11) Gettering of copper and iron to extended surface defects in Si; (12) Electronic states of Fe4 and manganese (Mn4) clusters in Si; (13) Magnetic resonance from a metastable sulfur-pair-related complex defect in Si; (14) Piezopectroscopy of two beryllium related double acceptors in Si; (15) Defect impurity complex formation at high donor concentration in Si; (16) electronic structure of isolated aluminium point defects and defect pairs in Si; (17) Photoluminescence of edge-defined film-fed growth Si; (18) Atomic structure of the interstitial defects in electron-irradiated Si and Ge; (19) Interaction between defects during the annealing of crystalline silicon; (20) Oxygen related point defects in GaAs; (21) Infrared absorption by interstitial oxygen in germanium doped silicon crystal; (22) Theory of nitrogen and platelets in diamond; and (23) The temperature dependence of trap cross section.
Author: Phillip M. Williams
Publisher:
ISBN:
Category : Semiconductor doping
Languages : en
Pages : 336
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Book Description
Author: David P. Fenning
Publisher:
ISBN:
Category :
Languages : en
Pages : 103
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Book Description
A theoretical framework is presented in this work for retrograde melting in silicon driven by the retrograde solubility of low-concentration metallic solutes at temperatures above the binary eutectic. High enthalpy of formation of point defects in silicon leads to retrograde solubility for a number of solutes, including many 3d transition metals. The Ni-Si system is used to demonstrate that in silicon under supersaturated conditions, such solutes precipitate out into liquid droplets. Synchrotron-based Xray Absorption Microspectroscopy measurements provide experimental confirmation of such phase transitions and the underlying thermodynamics. Finally, the potential for using retrograde melting to improve the electronic minority carrier lifetime of low quality silicon solar cell materials is considered.
