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Author: Tanya Kirilova Gachovska
Publisher: Springer Nature
ISBN: 3031025067
Category : Technology & Engineering
Languages : en
Pages : 68
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Book Description
This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
Author: Tanya Kirilova Gachovska
Publisher: Springer Nature
ISBN: 3031025067
Category : Technology & Engineering
Languages : en
Pages : 68
Get Book Here
Book Description
This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
Author: Tanya Kirilova Gachovska
Publisher: Morgan & Claypool Publishers
ISBN: 1627051902
Category : Technology & Engineering
Languages : en
Pages : 85
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Book Description
This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
Author: Bin Du (Electrical engineer)
Publisher:
ISBN: 9780549651420
Category : Semiconductors
Languages : en
Pages :
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Book Description
Author: Pushpakaran Bejoy N
Publisher: World Scientific
ISBN: 9813237848
Category : Technology & Engineering
Languages : en
Pages : 464
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Book Description
The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.
Author: Yanming Xu
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Power electronics technology has rapidly developed during the past decades. Power electronics systems aim to achieve high efficiency as power conversion interfaces while fulfilling the performance and reliability requirements. The key to achieving these objectives is power semiconductors, which dictate the power electronics system's efficiency, power density, and reliability. In recent years, traditional Silicon (Si) devices are reaching their material limits. Meanwhile, new Wide-Bandgap (WBG) devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) devices have been commercialized, featuring high breakdown voltage, fast switching speed, and high thermal capability. On the other hand, semiconductor devices are typically exposed to repetitive heat pulses and are often the most critical components affecting system reliability. Consequently, a comprehensive modelling method for modern power semiconductors that can describe various devices' switching behaviors is highly desirable by power electronics engineers and manufacturers. This research focuses on developing a simulation-based modelling methodology for modern power semiconductors to evaluate the power electronics system's efficiency. A multi-level simulation strategy has been proposed and implemented in PSCAD/EMTDC. A generalized transient semiconductor model has been developed, which can reproduce the device's switching behaviors. Subsequently, the power losses are obtained to form a multi-dimensional power loss look-up table under a wide range of operating conditions. A dynamic thermal model for temperature estimation, and a typical electrical network using simple switch models for semiconductor devices have been implemented. The junction temperature is updated every switching cycle by the power loss with a thermal model and influence back to the electrical simulation. In this way, a closed-loop electro-thermal simulation is formed to evaluate both electrical and thermal performances in a single simulator with a range of acceptable accuracy. A double pulse test platform has been designed and built for device characterizations and power loss verifications. Moreover, a single-phase grid-tied buck-boost type inverter application has been selected as a case study and built to study the proposed method. The measured results indicate that the proposed approach is highly promising for power electronics engineers to evaluate and optimize a system during the early design stage.
Author: Márta Rencz
Publisher: MDPI
ISBN: 3039217364
Category : Technology & Engineering
Languages : en
Pages : 222
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Book Description
With increasing power levels and power densities in electronics systems, thermal issues are becoming more and more critical. The elevated temperatures result in changing electrical system parameters, changing the operation of devices, and sometimes even the destruction of devices. To prevent this, the thermal behavior has to be considered in the design phase. This can be done with thermal end electro-thermal design and simulation tools. This Special Issue of Energies, edited by two well-known experts of the field, Prof. Marta Rencz, Budapest University of Technology and Economics, and by Prof. Lorenzo Codecasa, Politecnico di Milano, collects twelve papers carefully selected for the representation of the latest results in thermal and electro-thermal system simulation. These contributions present a good survey of the latest results in one of the most topical areas in the field of electronics: The thermal and electro-thermal simulation of electronic components and systems. Several papers of this issue are extended versions of papers presented at the THERMINIC 2018 Workshop, held in Stockholm in the fall of 2018. The papers presented here deal with modeling and simulation of state-of-the-art applications that are highly critical from the thermal point of view, and around which there is great research activity in both industry and academia. Contributions covered the thermal simulation of electronic packages, electro-thermal advanced modeling in power electronics, multi-physics modeling and simulation of LEDs, and the characterization of interface materials, among other subjects.
Author: Qinggao Mei
Publisher: Open Dissertation Press
ISBN: 9781361025307
Category : Technology & Engineering
Languages : en
Pages : 76
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Book Description
This dissertation, "An Efficient Large-scale Transient Electro-thermal Field Simulator for Power Devices" by Qinggao, Mei, 梅清高, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: With ever-decreasing device size and extensive use of energy-consuming smart devices, heat generated within devices easily leads to extremely high temperature. In return, high temperature influences electrical operational characteristics of the semiconductor devices. Therefore, it is essential for designers to predict accurate temperature and voltage/current distribution and its impact on various devices. For this purpose, coupled electro-thermal (ET) simulation is indispensable. Another concern lies in the number of matrix elements for computation, possibly millions of elements, resulting in days of heavy computation. Therefore, a fast yet accurate modeling framework of overcoming the simulation difficulty is required. In this dissertation, a new transient electro-thermal simulation method for fast 3D chip-level analysis of power devices with field solver accuracy is proposed. The metallization stack and substrate are meshed and solved with 3D field solver using nonlinear temperature-dependent electrical and thermal parameters, and the active transistors are modeled with table models to avoid time-consuming TCAD simulation. Three main contributions are made to enhance physical relevance and computational performance. First, both implicit loose and tight coupling schemes are introduced to compare their computational performances under different coupling degrees. Also, their complexity analysis is presented. Second, the capacitive effects, including interconnect parasitic capacitance and gate capacitance of power devices with nonlinear dependence on bias and temperature, are explicitly accounted for. The inclusion of capacitive effects allows accurate modeling of devices with large numbers of transistor fingers and high frequency application. Third, a specialized nonlinear exponential integrator (EI) method is developed to address the considerably different time scales between electrical and thermal sectors. The EI-based transient solver allows the electrical system to step with much larger time step size than in conventional methods, thus the time step size gap between the electrical and the thermal simulation is largely reduced. Its benefits of scalability, adaptivity and accuracy are also demonstrated in the dissertation. Subjects: Power semiconductors
Author: Krzysztof Górecki
Publisher: MDPI
ISBN: 303650334X
Category : Technology & Engineering
Languages : en
Pages : 140
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Book Description
This book is devoted to the latest advances in the area of electrothermal modelling of electronic components and networks. It contains eight sections by different teams of authors. These sections contain the results of: (a) electro-thermal simulations of SiC power MOSFETs using a SPICE-like simulation program; (b) modelling thermal properties of inductors taking into account the influence of the core volume on the efficiency of heat removal; (c) investigations into the problem of inserting a temperature sensor in the neighbourhood of a chip to monitor its junction temperature; (d) computations of the internal temperature of power LEDs situated in modules containing multiple-power LEDs, taking into account both self-heating in each power LED and mutual thermal couplings between each diode; (e) analyses of DC-DC converters using the electrothermal averaged model of the diode–transistor switch, including an IGBT and a rapid-switching diode; (f) electrothermal modelling of SiC power BJTs; (g) analysis of the efficiency of selected algorithms used for solving heat transfer problems at nanoscale; (h) analysis related to thermal simulation of the test structure dedicated to heat-diffusion investigation at the nanoscale.
Author: Hua Bai
Publisher: John Wiley & Sons
ISBN: 1119972760
Category : Technology & Engineering
Languages : en
Pages : 374
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Book Description
In high power, high voltage electronics systems, a strategy to manage short timescale energy imbalances is fundamental to the system reliability. Without a theoretical framework, harmful local convergence of energy can affect the dynamic process of transformation, transmission, and storage which create an unreliable system. With an original approach that encourages understanding of both macroscopic and microscopic factors, the authors offer a solution. They demonstrate the essential theory and methodology for the design, modeling and prototyping of modern power electronics converters to create highly effective systems. Current applications such as renewable energy systems and hybrid electric vehicles are discussed in detail by the authors. Key features: offers a logical guide that is widely applicable to power electronics across power supplies, renewable energy systems, and many other areas analyses the short-scale (nano-micro second) transient phenomena and the transient processes in nearly all major timescales, from device switching processes at the nanoscale level, to thermal and mechanical processes at second level explores transient causes and shows how to correct them by changing the control algorithm or peripheral circuit includes two case studies on power electronics in hybrid electric vehicles and renewable energy systems Practitioners in major power electronic companies will benefit from this reference, especially design engineers aiming for optimal system performance. It will also be of value to faculty staff and graduate students specializing in power electronics within academia.
Author: Alhussein Albarbar
Publisher: Springer
ISBN: 3319598287
Category : Technology & Engineering
Languages : en
Pages : 224
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Book Description
This book analyzes the thermal characteristics of power electronic devices (PEDs) with a focus on those used in wind and solar energy systems. The authors focus on the devices used in such applications, for example boost converters and inverters under different operating conditions. The book explains in detail finite element modeling techniques, setting up measuring systems, data analysis, and PEDs’ lifetime calculations. It is appropriate reading for graduate students and researchers who focus on the design and reliability of power electronic devices.
